I. Introduction
Direct modulation semiconductor lasers, with their unique superiority in size, weight, and power efficiency (SWaP), have been widely used in radio-over-fiber (RoF) [1], short-haul data communication [2], and many other fields. Currently, two main kinds of technical schemes are categorized to improve the modulation bandwidth of semiconductor lasers. One is to increase the carrier-photon resonance (CPR) frequency by shortening cavity length or redesigning active layer structure, but these methods undoubtedly increase the manufacturing difficulty and cost [3]. The other approach is to introduce the photon-photon resonance (PPR) effect [4], [5]. The PPR effect can be activated by unidirectional external optical injection locking, self-injection locking, and mutual-injection locking. For unidirectional external optical injection, master-slave structures are generally adopted. However, the discrete devices such as variable optical attenuators and isolators not only have a large volume, but also make the whole system very sensitive to environmental disturbances. For self-injection locking, due to the use of passive external cavities to realize optical feedback, the cost can be significantly reduced. In our previous work, a butt-coupled microring reflector was used as the optical feedback cavity. The hybrid laser could achieve nearly two folds of direct modulation bandwidth enhancement and two orders of magnitude of linewidth reduction [6].