A Ku-Band high-efficiency monolithic microwave integrated circuit high-power amplifier based on a commercially available 0.25-µm GaN technology is presented. A three-stage topology is employed in this design to enhance both gain and efficiency. The simulated results demonstrate that the proposed HPA chip, occupying an area of 4.1\times 3\text{mm}^{2}, features an average output power of 45.2 dBm...Show More
In this paper, a high-gain LNA for Ka-band radiometers is presented. The design incorporates improvements in the input stage structure to achieve a lower noise figure and enhanced isolation. Additionally, a well-designed inter-stage matching network and rear structure are employed to achieve improved gain performance. Manufactured in the 130-nm BiCMOS process. the presented LNA features 43.5 dB ga...Show More
This letter presents an ultralow-power (ULP) low-noise amplifier (LNA) with a robust linearization technique. A replica of the LNA's amplification transistor is integrated into the negative feedback path as an auxiliary to generate postdistortion (PD) current, where accurate process-voltage–temperature (PVT)-independent third-order distortion cancellation is achieved through constant-gain bias cir...Show More
