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Mohamed Mobarak - IEEE Xplore Author Profile
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Mohamed Mobarak

Also published under: M. Mobarak

Publications
14
Citations
125
Publications by Year
20102024
Co-Authors:
Show All Co-Authors (43)
Image of author Mohamed Mobarak

Mohamed Mobarak

Also published under: M. Mobarak

Affiliation

Department of Electronics and Electrical Communications
Cairo University
Giza, Egypt

Publication Topics

Biography

Mohamed Mobarak (M'09) was born in Cairo, Egypt. He received the B.Sc. degree (with honors) and M.Sc. degree in electronics and communications engineering from Cairo University, Cairo, Egypt, in 2001 and 2004, respectively, and the Ph.D. degree in electrical engineering from Texas A&M University, College Station, in 2010.,From May 2006 to January 2007, he was an Intern with Hittite Microwave, where he worked on frequency synthesizers. From May 2009 to September 2009, he interned with Microtune Inc., where he designed a cable modem upstream amplifier for the DOCSIS 3.0 standard. He was with Silicon Labs from 2010 to 2011, and he is currently with Hittite Microwave Egypt. His current research interests include high-efficiency power amplifiers...
Publications
14
Citations
125
Publications by Year
20102024
Co-Authors:
Show All Co-Authors (43)
Author's Published Works

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A 60–90 GHz Passive Mixer-First Receiver in 22-nm SOI CMOS

Abdelhameed Hashem;Mohamed Mobarak;Mohamed A. Y. Abdalla

2024 23rd International Symposium on Communications and Information Technologies (ISCIT)
Year: 2024 | Conference Paper |
Multiple-input multiple-output (MIMO) wireless communication systems are susceptible to the intermodulation of the multiple signals received and strong blockers, neces-sitating high in-band and out-of-band (OOB) linearity. This work introduces a mixer-first front-end architecture that in-corporates a trans-impedance amplifier (TIA) with a capacitive positive feedback technique to leverage second-o...Show More

A 60–90 GHz Passive Mixer-First Receiver in 22-nm SOI CMOS

Abdelhameed Hashem;Mohamed Mobarak;Mohamed A. Y. Abdalla

Year: 2024 | Conference Paper |

Cycle Slipping Cancellation in Bang-Bang PLLs

Sherihan K. Fahmi;Mohamed Dessouky;Mohamed Mobarak;Mohamed A. Y. Abdalla

2024 6th Novel Intelligent and Leading Emerging Sciences Conference (NILES)
Year: 2024 | Conference Paper |
Digital phase-locked loops (DPLLs) based on bang-bang phase detectors (BBPD) are now very common in many communication systems specially in clock and data recovery. However, it suffers from long settling time due to cycle slipping issue and even at some point it fails to achieve lock. This paper presents a simple and efficient technique to resolve the issue of locking failure in bang-bang phase-lo...Show More

Cycle Slipping Cancellation in Bang-Bang PLLs

Sherihan K. Fahmi;Mohamed Dessouky;Mohamed Mobarak;Mohamed A. Y. Abdalla

Year: 2024 | Conference Paper |

A Comparative Study on the Parallel and Series Doherty mm-Wave Power Amplifier for 5G NR applications

Eslam A. Aly;Mostafa Bahaa Alabd;Mohamed Mobarak;Mohamed A.Y. Abdalla

2024 International Semiconductor Conference (CAS)
Year: 2024 | Conference Paper |
The continuous development of modern wireless communication technologies has necessitated the development of highly efficient power amplifiers (PAs) for 5G NR applications. This paper presents a comparative study of parallel and series configurations of the Doherty mm-wave PA implemented in Global Foundries 22-nm SOI FDX process. Both configurations aim to enhance Power Back-Off (PBO) efficiency, ...Show More

A Comparative Study on the Parallel and Series Doherty mm-Wave Power Amplifier for 5G NR applications

Eslam A. Aly;Mostafa Bahaa Alabd;Mohamed Mobarak;Mohamed A.Y. Abdalla

Year: 2024 | Conference Paper |

An Error Vector Magnitude Performance Modeling and Analysis Methodology for 5G mm-Wave Transmitters

Ahmed A. Ghoniem;Ahmed Hesham Mehana;Mohamed Mobarak;Mohamed A. Y. Abdalla

IEEE Microwave and Wireless Technology Letters
Year: 2023 | Volume: 33, Issue: 6 | Journal Article |
This letter proposes an error vector magnitude (EVM) modeling and analysis approach for a 5G mm-wave device under test IC (DUT). This model incorporates the signal characteristics (e.g., bandwidth (BW), peak-to-average-power ratio (PAPR), and power level) and the system characteristics (e.g., intermodulation distortion (IMD) and amplitude modulation (AM–AM) $\ldots $ ). The proposed approach accur...Show More

An Error Vector Magnitude Performance Modeling and Analysis Methodology for 5G mm-Wave Transmitters

Ahmed A. Ghoniem;Ahmed Hesham Mehana;Mohamed Mobarak;Mohamed A. Y. Abdalla

Year: 2023 | Volume: 33, Issue: 6 | Journal Article |

A Transformer-Based Differential Doherty Power Amplifier with Improved Efficiency Power Combining Technique for 6G Applications

Hesham Ahmed;Mohamed Mobarak;Abdalla Mohamed A. Y.

2022 International Conference on Microelectronics (ICM)
Year: 2022 | Conference Paper |
This paper presents a Doherty power amplifier (PA) architecture to improve the power back-off (PBO) efficiency at millimeter-wave (mm-Wave) frequencies by utilizing a novel power combining technique that reduces the losses at the output combining network. The architecture is applied to the transformer-based Doherty for its low area footprint and its balun operation. The proposed PA is designed and...Show More

A Transformer-Based Differential Doherty Power Amplifier with Improved Efficiency Power Combining Technique for 6G Applications

Hesham Ahmed;Mohamed Mobarak;Abdalla Mohamed A. Y.

Year: 2022 | Conference Paper |

A 24-44 GHz Highly Linear and Efficient mm-Wave Power Amplifier in 65-nm CMOS for 5G Phased Array Applications

Bassel A. Elgharbawy;Mohamed Mobarak;Mohamed A. Y. Abdalla

2022 IEEE 9th International Symposium on Microwave, Antenna, Propagation and EMC Technologies for Wireless Communications (MAPE)
Year: 2022 | Conference Paper |
This paper presents a 24-44 GHz wideband highly linear and efficient class-AB 2-stacked power amplifier (PA) in 65-nm bulk CMOS process for 5G phased array applications. To boost the output power (POUT) and power added efficiency (PAE) a differential 2-stacked transistors with a higher supply (2V) is used. Cross-Coupled neutralization capacitors and shunt inductors are used at the intermediate nod...Show More

A 24-44 GHz Highly Linear and Efficient mm-Wave Power Amplifier in 65-nm CMOS for 5G Phased Array Applications

Bassel A. Elgharbawy;Mohamed Mobarak;Mohamed A. Y. Abdalla

Year: 2022 | Conference Paper |

A 24-41.5 GHz LNA with Enhanced IP1dB in 65-nm BULK CMOS for 5G Applications

Mohamed A. ElBadry;Mohamed Mobarak;Mohamed A. Y. Abdalla

2022 24th International Microwave and Radar Conference (MIKON)
Year: 2022 | Conference Paper |
Cited by: Papers (3)
This paper presents a wideband low-noise amplifier (LNA) for 5G applications operating from 24 to 41.5 GHz. The LNA consumes 42.6 mA from 1.2 V supply. A conventional diode connected linearization transistor was used to enhance the third-order input intercept point (IIP3) without improving the input 1dB compression point (IP1dB). A new technique to enhance the IP1dB to improve the LNA input dynami...Show More

A 24-41.5 GHz LNA with Enhanced IP1dB in 65-nm BULK CMOS for 5G Applications

Mohamed A. ElBadry;Mohamed Mobarak;Mohamed A. Y. Abdalla

Year: 2022 | Conference Paper |

A 24 - 41.5 GHz VGA With Low Phase Variation and Enhanced IIP3 for 5G Applications

Mohamed A. Omran;Mohamed Mobarak;Mohamed A. Y. Abdalla

2022 24th International Microwave and Radar Conference (MIKON)
Year: 2022 | Conference Paper |
Cited by: Papers (1)
In this paper, a wide band high linearity 65-nm CMOS Variable Gain Amplifier (VGA) for millimeter-wave (mm-wave) 5G communications is presented. The VGA achieves 14 dB gain range with 1 dB gain step achieved by 9-bit digital gain control. It realizes a maximum phase variation of 2.28o, RMS phase variation of 1.64o and a maximum gain error of 0.28 dB for all gain states across the frequency range. ...Show More

A 24 - 41.5 GHz VGA With Low Phase Variation and Enhanced IIP3 for 5G Applications

Mohamed A. Omran;Mohamed Mobarak;Mohamed A. Y. Abdalla

Year: 2022 | Conference Paper |

2.1 mm-Wave 5G Radios: Baseband to Waves

Ahmed Khalil;Islam Eshrah;Amr Elsherief;Ahmed Mehana;Mohamed Abdalla;Mohamed Mobarak;John Kilpatrick;Brian Hall;Ahmed Ashry;Hossam Fahmy;Sherif Salim;Russell Kernan;Brian Herdeg;Gary Sapia;Mohamed El-Nozahi;Mohamed Weheiba;Mark D’Amato;Christian Bautista;Kasey Chatzopoulos;Ahmed Ghoniem;Yossif Mosa;Daniel Roll;Kerem Ok

2021 IEEE International Solid-State Circuits Conference (ISSCC)
Year: 2021 | Conference Paper |
Cited by: Papers (21)
There are many challenges in building millimeter-Wave (mmW) 5G radios [1] –[3]. Some of the key challenges are the cost, heat dissipation, and array calibration. This paper describes ADI’s full line-up of mmW 5G radios used today, with a focus on the millimeter wave front-end portion, and how it addresses some of these challenges. The radio block diagram, shown in Fig. 2.1.1, is an example of a du...Show More

2.1 mm-Wave 5G Radios: Baseband to Waves

Ahmed Khalil;Islam Eshrah;Amr Elsherief;Ahmed Mehana;Mohamed Abdalla;Mohamed Mobarak;John Kilpatrick;Brian Hall;Ahmed Ashry;Hossam Fahmy;Sherif Salim;Russell Kernan;Brian Herdeg;Gary Sapia;Mohamed El-Nozahi;Mohamed Weheiba;Mark D’Amato;Christian Bautista;Kasey Chatzopoulos;Ahmed Ghoniem;Yossif Mosa;Daniel Roll;Kerem Ok

Year: 2021 | Volume: 64 | Conference Paper |

9-16 GHz high-linearity I/Q active mixer in 0.13-μm CMOS

Mohamed M. R. Esmael;Mohamed Mobarak;Mohamed A. Y. Abdalla

2016 33rd National Radio Science Conference (NRSC)
Year: 2016 | Conference Paper |
Cited by: Papers (2)
This paper presents the design of CMOS high linearity I/Q mixer for 9-16-GHz down conversion applications. The mixer is built using 0.13μm CMOS, and it has a gain of 3dB, an input IIP3 of 18dBm, a NF of 15.5 dB, The I/Q mixer achieves a Phase balance of 3°, and amplitude balance of 0.3dB. The mixer occupies an area of 1.5×2.3mm with a total power consumption of 45 mW from a 1.5-V supply, and requi...Show More

9-16 GHz high-linearity I/Q active mixer in 0.13-μm CMOS

Mohamed M. R. Esmael;Mohamed Mobarak;Mohamed A. Y. Abdalla

Year: 2016 | Conference Paper |

10.5-14.5GHz four-channel phased array receiver in 0.13-μm CMOS technology

Mohamed M. R. Esmael;Mohamed Ayman;Karim Gooda;Mohamed A. Y. Abdalla;Mohamed Mobarak

2016 IEEE 16th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF)
Year: 2016 | Conference Paper |
Cited by: Papers (1)
This paper presents the design of a fully integrated CMOS 4-channel phased-array receiver for 10.5-14.5 GHz telecom infrastructure, microwave link and radar applications. The phased-array is built using 0.13μm CMOS, and has a gain of 24.5 dB at 12.5 GHz, an input IIP3 of -7.3 dBm, a NF of 4.8 dB and the RMS phase error is 3o. The chip occupies an area of 2.9×3.2mm with a total power consumption of...Show More

10.5-14.5GHz four-channel phased array receiver in 0.13-μm CMOS technology

Mohamed M. R. Esmael;Mohamed Ayman;Karim Gooda;Mohamed A. Y. Abdalla;Mohamed Mobarak

Year: 2016 | Conference Paper |

A 2-GHz Highly Linear Efficient Dual-Mode BiCMOS Power Amplifier Using a Reconfigurable Matching Network

Hajir Hedayati;Mohamed Mobarak;Guillaume Varin;Philippe Meunier;Patrice Gamand;Edgar Sanchez-Sinencio;Kamran Entesari

IEEE Journal of Solid-State Circuits
Year: 2012 | Volume: 47, Issue: 10 | Journal Article |
A highly linear, efficient, two-stage power amplifier for high-data-rate wireless applications is presented. The linearity is greatly improved by adding an auxiliary amplifier to the main bipolar transistor amplifier in a feed-forward approach to cancel out the nonlinearity terms. The efficiency enhancement is achieved using a switchable biasing and a reconfigurable output-matching network based o...Show More

A 2-GHz Highly Linear Efficient Dual-Mode BiCMOS Power Amplifier Using a Reconfigurable Matching Network

Hajir Hedayati;Mohamed Mobarak;Guillaume Varin;Philippe Meunier;Patrice Gamand;Edgar Sanchez-Sinencio;Kamran Entesari

Year: 2012 | Volume: 47, Issue: 10 | Journal Article |

A fully integrated highly linear efficient power amplifier in 0.25µm BiCMOS technology for wireless applications

H. Hedayati;M. Mobarak;G. Varin;P. Meunier;P. Gamand;E. Sánchez-Sinencio;K. Entesari

2011 IEEE Custom Integrated Circuits Conference (CICC)
Year: 2011 | Conference Paper |
A highly linear, efficient power amplifier for high data rate wireless applications is presented. The linearity is greatly improved by adding an auxiliary amplifier to the main bipolar junction transistor (BJT) in a feed-forward approach to cancel out the non-linearity terms. The efficiency enhancement is achieved using a switchable biasing and output matching network based on the available input ...Show More

A fully integrated highly linear efficient power amplifier in 0.25µm BiCMOS technology for wireless applications

H. Hedayati;M. Mobarak;G. Varin;P. Meunier;P. Gamand;E. Sánchez-Sinencio;K. Entesari

Year: 2011 | Conference Paper |

Attenuation-Predistortion Linearization of CMOS OTAs With Digital Correction of Process Variations in OTA-C Filter Applications

Mohamed Mobarak;Marvin Onabajo;Jose Silva-Martinez;Edgar Sanchez-Sinencio

IEEE Journal of Solid-State Circuits
Year: 2010 | Volume: 45, Issue: 2 | Journal Article |
Cited by: Papers (80)
An architectural attenuation-predistortion linearization scheme for a wide range of operational transconductance amplifiers (OTAs) is proposed and demonstrated with a transconductance-capacitor (Gm-C) filter. The linearization technique utilizes two matched OTAs to cancel output harmonics, creating a robust architecture. Compensation for process variations and frequency-dependent distor...Show More

Attenuation-Predistortion Linearization of CMOS OTAs With Digital Correction of Process Variations in OTA-C Filter Applications

Mohamed Mobarak;Marvin Onabajo;Jose Silva-Martinez;Edgar Sanchez-Sinencio

Year: 2010 | Volume: 45, Issue: 2 | Journal Article |

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