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Power BiCMOS process with high voltage device implementation for 20 V mixed signal circuit applications
W. Nehrer;L. Anderson;T. Debolske;T. Efland;P. Fleischmann;C. Haidinyak;W. Leitz;M. McNutt;E. Mindricelu;S. Pendharkar;J. Smith;R.V. Taylor
Proceedings of the 13th International Symposium on Power Semiconductor Devices & ICs. IPSD '01 (IEEE Cat. No.01CH37216)
Year: 2001 | Conference Paper |
Optimization of circuit performance and cost generally involves a trade-off between a) circuit design and die area efficiency plus shortest time to market with b) maintaining production efficiency of multiple process variants with multiple component lists. Key technology drivers were identified and redesigned in the LBC6 generation power BiCMOS process described herein to achieve a 40% die area re...Show More
A high-resolution (100-ps, 100-/spl mu/m) microchannel plate gated pinhole camera to study fast Z-pinch implosions
S. Breeze;L. Ruggles;L. Anderson;C. Deeney;R.B. Spielman;J.L. Porter
Summary form only given as follows. Fast, high current Z-pinch implosions are used to produce intense X-ray pulses for various applications. For high-energy photon production and for inertial fusion applications, the imploding Z pinch can achieve velocities between 50 and 100 cm//spl mu/s. To image such implosions, a high time resolution is needed. Furthermore, the final pinches formed can be only...Show More
Fast detection of mobile ions for WLR monitoring
IEEE 1995 International Integrated Reliability Workshop. Final Report
Year: 1995 | Conference Paper |
Cited by: Papers (1)
A new fast electrical technique for the detection of mobile ions in silicon processes using a simple field oxide test structure is presented. The method is ideal for WLR monitoring of mobile ions since its throughput is much higher than conventional slower methods such as the BTS (bias temperature sweep) method. The technique is based upon biasing a field oxide FET in a configuration resembling a ...Show More
A case study in a 100/spl times/reduction in sodium ions in a 0.8 /spl mu/m BiCMOS process using triangular voltage sweep
IEEE 1995 International Integrated Reliability Workshop. Final Report
Year: 1995 | Conference Paper |
Cited by: Papers (1)
This case study shows how to use Triangular Voltage Sweep (TVS) to reduce Na and K in the backend of a triple-metal BiCMOS process from 10/sup 12/ ions/cm/sup 2/ to 10/sup 10/ ions/cm/sup 2/. TVS is compared to Bias Temperature Stress (BTS) techniques. While Capacitance-Voltage plots are good monitors for bulk contamination (metal, deposited oxide, etc.), data is presented which shows that TVS is ...Show More
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