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Weifeng Sun - IEEE Xplore Author Profile

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A novel vertical Hall device (VHD), featuring a waved boundary magnetic-sensitive well, is proposed for the first time in this article. By applying multiwindow implantation (MWI) method in 0.15-μm bipolar–CMOS–DMOS (BCD) platform, nonuniform doping profile in lateral and vertical directions is realized and the path of bias current is changed subsequently. The current path with long route and low r...Show More
In this work, a flexible low dropout regulator (LDO) based on InSnO (ITO) thin film transistors (TFTs) on a 50-μm polyimide (PI) substrate is demonstrated for the first time. The LDO is realized through integrated depleted- and enhanced-mode (D-mode and E-mode) ITO TFTs with 6-nm and 4-nm thick ITO channel layers respectively. Low-current design in 4-transistors (4T) voltage reference and restrict...Show More
The quadrilateral control method for Four-switch Buck-Boost (FSBB) converter can enable all of the power switches to achieve ZVS, thereby achieving high power density. However, the inductor current requires to be sensed and regulated to ensure the realization of ZVS, which will introduce the additional losses and degrade the efficiency. In this paper, a high-efficiency control strategy based on lo...Show More
This work conducts an experimental study on the effects of total-ionizing-dose (TID) on amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistors. The threshold voltage ( {V}_{\text {th}}\text {)} exhibited a negative shift during irradiation, concomitant with a decline in carrier mobility ( \mu _{\text {FE}}\text {)} and an increase in off-current. The TID-induced H-related traps i...Show More
With the rapid advancement of three-dimensional laser ranging imaging technology and the continuous expansion of array scale, more demanding requirements such as stronger anti-interference capability, higher precision, and lower power consumption are imposed on the readout circuit. Nevertheless, with the expansion of the array scale, the transmission of high-frequency clock signals is affected by ...Show More
In this paper, an RC relaxation oscillator exhibiting robust performance over an extended temperature and supply range is proposed. By incorporating a digitally-assisted calibration loop, the design eliminates the errors from switch on-resistance, comparator offset and propagation delay. Fabricated using a 180 nm bipolar-CMOS-DMOS (BCD) process technology, the oscillator operates at a frequency of...Show More
Silicon-on-insulator (SOI) bipolar-CMOS-DMOS (BCD) technologies based on the 0.18- $\mu $ m process node are popular for automotive applications due to their superior features. In the practical ICs, the devices are usually arranged tightly to balance the performance and chip area. As for the p-type lateral double-diffused MOS (pLDMOS), the drain and source are both applied on the high voltage wha...Show More
Light detection and ranging (Lidar) is usually enabled by Single-Photon Avalanche Detector (SPAD) sensors which may be falsely triggered by ambient light. Coincidence detection can suppress the ambient light at the cost of the lateral resolution. A $64\times 64$ SPAD image sensor with coincidence detection is proposed for Lidar. A main-sub time-to-digital converter (TDC), in which the main TDC i...Show More
This letter proposes a monolithically integrated bidirectional gate electrostatic discharge protection scheme for p-GaN power high-electron-mobility transistors (HEMTs), in which a dual-gate HEMT is designed as the discharging transistor. With this protection scheme, the forward/reverse transmission line pulsing failure current is enhanced from 0.156 A/0.08 A to 1.36 A/5.26 A, almost without sacri...Show More
A broadband cascode distributed low-noise amplifier (CDLNA) with a wide operating temperature range is proposed in this work. A series of diodes are used as bias networks to achieve temperature compensation. To enhance the gain level in the passband, the negative resistance network is employed to offset drain transmission line losses. An attenuator based on reverse-biased diodes and resistors is d...Show More
This article proposes a load current-based adaptive voltage positioning (AVP) control scheme, which applies the load current as the current injection information directly instead of the inductor current feedback of the existing research, the proposed architecture does not need the inner current loop and the entire loop bandwidth only depends on the voltage loop, so the control bandwidth is increas...Show More
Double-clamp zero-voltage-switching (DCZVS) full-bridge flyback converter is one of the most attractive solutions for high-power density applications with wide input range, because of its features of primary-side regulation and excellent soft-switching. By analyzing the zero-voltage switching process and the maximum output power at maximum flux, this article reveals that the dead-time is one of th...Show More
The LLC dc transformer (LLC-DCX), due to its soft-switching characteristics, achieves high-efficiency energy transfer at high frequencies and is extensively used in high power density applications. However, the drive loss of conventional drive integrated circuits (ICs) is proportional to the switching frequency, leading to disproportionately high gate drive loss at higher frequencies, thereby limi...Show More
The ultra-high voltage P-channel later diffused MOS (PLDMOS) is difficult to be integrated in 1200 V high voltage integrated circuits for level-down function, which limits some functions such as high side fault detection to apply. In this work, the global potential control technology solves the problems of leakage increase and on-state current expansion caused by PLDMOS. The isolation structure wi...Show More
In this paper, a 40V 0.15μm Bipolar-CMOS-DMOS (BCD) platform with high sensitivity Hall device and low noise CMOS device is proposed. The lateral Hall device (LHD) with a current-related sensitivity (SI) of 378V/AT and the vertical Hall device (VHD) with a SIof 161V/AT are integrated in the platform without extra masks. The low noise CMOS with fluoride ion implantation shows a 10 times optimizatio...Show More
We fabricate a 200V monolithic GaN half-bridge power IC featuring an integrated substrate termination network (ISTN). The ISTN utilizes two-dimensional electron gas resistors to dynamically control the substrate potential so that detrimental back-gating effects and dynamic on-resistance ($\boldsymbol{R_{\mathrm{o}\mathrm{n}}}$) degradation is effectively suppressed. The proposed GaN power IC schem...Show More
In this paper, the failure mechanism of single-event burnout (SEB) in 4H-SiC inverter is studied by experiments and simulations. The most sensitive region to SEB in 4H-SiC inverter circuit has been identified by conducting pulsed laser simulations of single-event experiments. Experimental evidence demonstrates that the maximum Linear Energy Transfer (LET) value tolerated by 4H-SiC inverter circuit...Show More
This paper proposes a DDFS digital control module driving an 8-16GHz numerically controlled variable frequency phase-locked loop (PLL). The module utilizes a top-level state machine configuration and control mechanism along with an internal pipeline structure for signal conversion and output, which ensures continuous phase, rapid system response time, and flexible configuration capabilities. By em...Show More
In this paper, a brushless DC motor control chip based on PWM technique is proposed. It integrates the rotor position decoder and includes functions for forward and reverse rotation as well as angle selection. The chip integrates the functions of under-voltage protection, over-current protection, and over-temperature protection. This integration enhances the functionality of the chip. The width of...Show More
Due to its superior soft-switching characteristics, the LLC resonant converter achieves efficient power transmission at high frequencies and is extensively utilized in high power density applications. Conventional drivers exhibit loss that increase proportionally with frequency, resulting in excessive driving loss at high frequencies. To address this, a dual-channel four-switch resonant gate drive...Show More
With the development of the processes in datacentre servers, the power supply requirements become more and more strict, and the over-regulation issue of VRM needs to be solved in load step transient. In this paper, a multiphase control called multiphase two-loop control is proposed. It applies the unique outer voltage loop and per phase inner current loop structure, to reconstruct the Buck power s...Show More
This paper proposes a MOSFET-only error amplifier(EA) with clamp function, which reduces the power consumption to $71.7 \mu \mathrm{~A}$. Moreover, the circuit realizes the function of dynamic slewing rate enhancement, which can improve the performance of transient response. The static power consumption of the dynamic slewing rate enhancement module is only $4.7 \mu \mathrm{~A}$, and the slew rate...Show More
This paper introduces a capacitor-less n-type Low Dropout Regulator (LDO) designed to enhance transient response and expand the output voltage and current range, making it suitable for low-power biomedical System-on-Chip (SoC) applications. Utilizing a Recycling Folded Cascode (RFC) configuration to implement a common-mode feedback loop, this design improves the gain and bandwidth of the regulator...Show More
In this work, a novel lateral Hall device (LHD) with deep trench fingers is designed and fabricated in the O.5 $\mu \mathrm{m}$ silicon-on-insulator (SOI) platform. The deep trench finger serves to regulate the path of bias current in the magnetic-sensitive well, thereby rendering current-related sensitivity $(\mathbf{S}_{\mathbf{I}})$ I insensitive to the size of the signal electrode. The propose...Show More
This article proposes a practical auxiliary circuit for multiple voltage rails to improve dynamic response under significant load steps with an ultrafast slew rate. The proposed auxiliary circuit consists of a current injection/absorption circuit with nonlinear control that can effectively reduce undershoot and overshoot during transients, a sampling mechanism supporting its independent operation,...Show More