Author details

< Back

Jingzhong Li

Affiliation

School of Information and Multimedia Science

Jinggangshan University

Ji'an, Jiangxi, China

Publication Topics

Publications

Citations

Publications by Year

20092009

Co-Authors:

Author's Published Works

Showing 1-13 of 13 results

Select All on Page

Energy-Performance Assessment of Oscillatory Neural Networks Based on VO2 Devices for Future Edge AI Computing

Corentin Delacour;Stefania Carapezzi;Madeleine Abernot;Aida Todri-Sanial

IEEE Transactions on Neural Networks and Learning Systems

Year: 2024 | Volume: 35, Issue: 7 | Journal Article |

Cited by: Papers (15)

HTML

Energy-Performance Assessment of Oscillatory Neural Networks Based on VO2 Devices for Future Edge AI Computing

Corentin Delacour;Stefania Carapezzi;Madeleine Abernot;Aida Todri-Sanial

IEEE Transactions on Neural Networks and Learning Systems

Year: 2024 | Volume: 35, Issue: 7 | Journal Article |

Simulation Toolchain for Neuromorphic Oscillatory Neural Networks Based on Beyond-CMOS Vanadium Dioxide Devices

Stefania Carapezzi;Corentin Delacour;Aida Todri-Sanial

2022 IEEE International Conference on Flexible and Printable Sensors and Systems (FLEPS)

Year: 2022 | Conference Paper |

Cited by: Papers (1)

HTML

Simulation Toolchain for Neuromorphic Oscillatory Neural Networks Based on Beyond-CMOS Vanadium Dioxide Devices

Stefania Carapezzi;Corentin Delacour;Aida Todri-Sanial

2022 IEEE International Conference on Flexible and Printable Sensors and Systems (FLEPS)

Year: 2022 | Conference Paper |

How Frequency Injection Locking Can Train Oscillatory Neural Networks to Compute in Phase

Aida Todri-Sanial;Stefania Carapezzi;Corentin Delacour;Madeleine Abernot;Thierry Gil;Elisabetta Corti;Siegfried F. Karg;Juan Nüñez;Manuel Jiménèz;María J. Avedillo;Bernabé Linares-Barranco

IEEE Transactions on Neural Networks and Learning Systems

Year: 2022 | Volume: 33, Issue: 5 | Journal Article |

Cited by: Papers (25)

HTML

How Frequency Injection Locking Can Train Oscillatory Neural Networks to Compute in Phase

Aida Todri-Sanial;Stefania Carapezzi;Corentin Delacour;Madeleine Abernot;Thierry Gil;Elisabetta Corti;Siegfried F. Karg;Juan Nüñez;Manuel Jiménèz;María J. Avedillo;Bernabé Linares-Barranco

IEEE Transactions on Neural Networks and Learning Systems

Year: 2022 | Volume: 33, Issue: 5 | Journal Article |

Advanced Design Methods From Materials and Devices to Circuits for Brain-Inspired Oscillatory Neural Networks for Edge Computing

Stefania Carapezzi;Gabriele Boschetto;Corentin Delacour;Elisabetta Corti;Andrew Plews;Ahmed Nejim;Siegfried Karg;Aida Todri-Sanial

IEEE Journal on Emerging and Selected Topics in Circuits and Systems

Year: 2021 | Volume: 11, Issue: 4 | Journal Article |

Cited by: Papers (12)

HTML

Advanced Design Methods From Materials and Devices to Circuits for Brain-Inspired Oscillatory Neural Networks for Edge Computing

Stefania Carapezzi;Gabriele Boschetto;Corentin Delacour;Elisabetta Corti;Andrew Plews;Ahmed Nejim;Siegfried Karg;Aida Todri-Sanial

IEEE Journal on Emerging and Selected Topics in Circuits and Systems

Year: 2021 | Volume: 11, Issue: 4 | Journal Article |

Graphene and Carbon Nanotubes for Electronics Nanopackaging

Gabriele Boschetto;Stefania Carapezzi;Aida Todri-Sanial

IEEE Open Journal of Nanotechnology

Year: 2021 | Volume: 2 | Journal Article |

Cited by: Papers (10)

HTML

Graphene and Carbon Nanotubes for Electronics Nanopackaging

Gabriele Boschetto;Stefania Carapezzi;Aida Todri-Sanial

IEEE Open Journal of Nanotechnology

Year: 2021 | Volume: 2 | Journal Article |

Oscillatory Neural Networks for Edge AI Computing

Corentin Delacour;Stefania Carapezzi;Madeleine Abernot;Gabriele Boschetto;Nadine Azemard;Jeremie Salles;Thierry Gil;Aida Todri-Sanial

2021 IEEE Computer Society Annual Symposium on VLSI (ISVLSI)

Year: 2021 | Conference Paper |

Cited by: Papers (11)

HTML

Oscillatory Neural Networks for Edge AI Computing

Corentin Delacour;Stefania Carapezzi;Madeleine Abernot;Gabriele Boschetto;Nadine Azemard;Jeremie Salles;Thierry Gil;Aida Todri-Sanial

2021 IEEE Computer Society Annual Symposium on VLSI (ISVLSI)

Year: 2021 | Conference Paper |

Multi-Scale Modeling and Simulation Flow for Oscillatory Neural Networks for Edge Computing

Stefania Carapezzi;Corentin Delacour;Gabriele Boschetto;Elisabetta Corti;Madeleine Abernot;Ahmed Nejim;Thierry Gil;Siegfried Karg;Aida Todri-Sanial

2021 19th IEEE International New Circuits and Systems Conference (NEWCAS)

Year: 2021 | Conference Paper |

Cited by: Papers (6)

HTML

Multi-Scale Modeling and Simulation Flow for Oscillatory Neural Networks for Edge Computing

Stefania Carapezzi;Corentin Delacour;Gabriele Boschetto;Elisabetta Corti;Madeleine Abernot;Ahmed Nejim;Thierry Gil;Siegfried Karg;Aida Todri-Sanial

2021 19th IEEE International New Circuits and Systems Conference (NEWCAS)

Year: 2021 | Conference Paper |

TCAD Simulation Framework of Gas Desorption in CNT FET NO2 Sensors

Stefania Carapezzi;Susanna Reggiani;Elena Gnani;Antonio Gnudi

IEEE Transactions on Electron Devices

Year: 2020 | Volume: 67, Issue: 11 | Journal Article |

Cited by: Papers (3)

HTML

TCAD Simulation Framework of Gas Desorption in CNT FET NO2 Sensors

Stefania Carapezzi;Susanna Reggiani;Elena Gnani;Antonio Gnudi

IEEE Transactions on Electron Devices

Year: 2020 | Volume: 67, Issue: 11 | Journal Article |

On the electron mobility of strained InGaAs channel MOSFETs

Stefania Carapezzi;Susanna Reggiani;Elena Gnani;Antonio Gnudi

ESSDERC 2019 - 49th European Solid-State Device Research Conference (ESSDERC)

Year: 2019 | Conference Paper |

HTML

On the electron mobility of strained InGaAs channel MOSFETs

Stefania Carapezzi;Susanna Reggiani;Elena Gnani;Antonio Gnudi

ESSDERC 2019 - 49th European Solid-State Device Research Conference (ESSDERC)

Year: 2019 | Conference Paper |

3D TCAD modeling of NO2CNT FET sensors

Stefania Carapezzi;Sebastian Eberle;Susanna Reggiani;Elena Gnani;Cosmin Roman;Christofer Hierold;Antonio Gnudi

2018 48th European Solid-State Device Research Conference (ESSDERC)

Year: 2018 | Conference Paper |

Cited by: Papers (2)

HTML

3D TCAD modeling of NO2CNT FET sensors

Stefania Carapezzi;Sebastian Eberle;Susanna Reggiani;Elena Gnani;Cosmin Roman;Christofer Hierold;Antonio Gnudi

2018 48th European Solid-State Device Research Conference (ESSDERC)

Year: 2018 | Conference Paper |

Modelling nanoscale n-MOSFETs with III-V compound semiconductor channels: From advanced models for band structures, electrostatics and transport to TCAD

L. Selmi;E. Caruso;S. Carapezzi;M. Visciarelli;E. Gnani;N. Zagni;P. Pavan;P. Palestri;D. Esseni;A. Gnudi;S. Reggiani;F. M. Puglisi;G. Verzellesi

2017 IEEE International Electron Devices Meeting (IEDM)

Year: 2017 | Conference Paper |

Cited by: Papers (8)

HTML

Modelling nanoscale n-MOSFETs with III-V compound semiconductor channels: From advanced models for band structures, electrostatics and transport to TCAD

L. Selmi;E. Caruso;S. Carapezzi;M. Visciarelli;E. Gnani;N. Zagni;P. Pavan;P. Palestri;D. Esseni;A. Gnudi;S. Reggiani;F. M. Puglisi;G. Verzellesi

2017 IEEE International Electron Devices Meeting (IEDM)

Year: 2017 | Conference Paper |

TCAD Mobility Model of III-V Short-Channel Double-Gate FETs Including Ballistic Corrections

Stefania Carapezzi;Enrico Caruso;Antonio Gnudi;Pierpaolo Palestri;Susanna Reggiani;Elena Gnani

IEEE Transactions on Electron Devices

Year: 2017 | Volume: 64, Issue: 12 | Journal Article |

Cited by: Papers (6)

HTML

TCAD Mobility Model of III-V Short-Channel Double-Gate FETs Including Ballistic Corrections

Stefania Carapezzi;Enrico Caruso;Antonio Gnudi;Pierpaolo Palestri;Susanna Reggiani;Elena Gnani

IEEE Transactions on Electron Devices

Year: 2017 | Volume: 64, Issue: 12 | Journal Article |

TCAD low-field mobility model for InGaAs UTB MOSFETs including quasi-ballistic corrections

Stefania Carapezzi;Enrico Caruso;Antonio Gnudi;Susanna Reggiani;Elena Gnani

2016 46th European Solid-State Device Research Conference (ESSDERC)

Year: 2016 | Conference Paper |

Cited by: Papers (3)

HTML

TCAD low-field mobility model for InGaAs UTB MOSFETs including quasi-ballistic corrections

Stefania Carapezzi;Enrico Caruso;Antonio Gnudi;Susanna Reggiani;Elena Gnani

2016 46th European Solid-State Device Research Conference (ESSDERC)

Year: 2016 | Conference Paper |

Author details

Jingzhong Li

Jingzhong Li

Affiliation

Publication Topics

Showing 1-13 of 13 results

Show

Energy-Performance Assessment of Oscillatory Neural Networks Based on VO2 Devices for Future Edge AI Computing

Energy-Performance Assessment of Oscillatory Neural Networks Based on VO2 Devices for Future Edge AI Computing

Simulation Toolchain for Neuromorphic Oscillatory Neural Networks Based on Beyond-CMOS Vanadium Dioxide Devices

Simulation Toolchain for Neuromorphic Oscillatory Neural Networks Based on Beyond-CMOS Vanadium Dioxide Devices

How Frequency Injection Locking Can Train Oscillatory Neural Networks to Compute in Phase

How Frequency Injection Locking Can Train Oscillatory Neural Networks to Compute in Phase

Advanced Design Methods From Materials and Devices to Circuits for Brain-Inspired Oscillatory Neural Networks for Edge Computing

Advanced Design Methods From Materials and Devices to Circuits for Brain-Inspired Oscillatory Neural Networks for Edge Computing

Graphene and Carbon Nanotubes for Electronics Nanopackaging

Graphene and Carbon Nanotubes for Electronics Nanopackaging

Oscillatory Neural Networks for Edge AI Computing

Oscillatory Neural Networks for Edge AI Computing

Multi-Scale Modeling and Simulation Flow for Oscillatory Neural Networks for Edge Computing

Multi-Scale Modeling and Simulation Flow for Oscillatory Neural Networks for Edge Computing

TCAD Simulation Framework of Gas Desorption in CNT FET NO2 Sensors

TCAD Simulation Framework of Gas Desorption in CNT FET NO2 Sensors

On the electron mobility of strained InGaAs channel MOSFETs

On the electron mobility of strained InGaAs channel MOSFETs

3D TCAD modeling of NO2CNT FET sensors

3D TCAD modeling of NO2CNT FET sensors

Modelling nanoscale n-MOSFETs with III-V compound semiconductor channels: From advanced models for band structures, electrostatics and transport to TCAD

Modelling nanoscale n-MOSFETs with III-V compound semiconductor channels: From advanced models for band structures, electrostatics and transport to TCAD

TCAD Mobility Model of III-V Short-Channel Double-Gate FETs Including Ballistic Corrections

TCAD Mobility Model of III-V Short-Channel Double-Gate FETs Including Ballistic Corrections

TCAD low-field mobility model for InGaAs UTB MOSFETs including quasi-ballistic corrections

TCAD low-field mobility model for InGaAs UTB MOSFETs including quasi-ballistic corrections

IEEE Account

Purchase Details

Profile Information

Need Help?

Jingzhong Li

Jingzhong Li

Affiliation

Publication Topics

Showing 1-13 of 13 results

Results