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S. R. Droes

Publications

Citations

Publications by Year

20042009

Co-Authors:

M. A. CrowderY. FukushimaJ. HartzellH. KobayashiE. Kobayashi

Show All Co-Authors (15)

S. R. Droes

Affiliation

Sharp Laboratories of America

Inc.orporated

Camas, WA, USA

Publication Topics

Gate Oxide,
Threshold Voltage,
Active Region,
Anisotropy,
Average Mobility,
Carrier Mobility,
Channel Activity,
Clock Frequency,
Defect Concentration,
Device Performance,
Device Thickness,
Effect Of Microstructure

Biography

Steven R. Droes was born in Reno, NV, on January 26, 1962. He received the Ph.D. degree in chemical engineering from the University of New Mexico, Albuquerque, in 1998.,In 2000, he joined Sharp Laboratories of America, Camas, WA, where he is currently working on research and development of high-performance thin-film transistors for use in liquid-crystal displays.(Based on document published on 22 March 2004).

Publications

Citations

Publications by Year

20042009

Co-Authors:

M. A. Crowder
Y. Fukushima
J. Hartzell
H. Kobayashi
E. Kobayashi

Show All Co-Authors (15)

Author's Published Works

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Conferences (1)

Journals (1)

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A.T. Voutsas(2)
M. Moriguchi(1)
H. Kobayashi(1)
Y. Mitani(1)
S. R. Droes(1)
Sharp Laboratories of America, Inc.orporated, Camas, WA, USA(2)
Electronic Component Group, Sharp Corporation, Fukuyama, Hiroshima, Japan(1)
Display Device Laboratories Corporate Research and Development Group, Sharp Corporation, Tenri, Nara, Japan(1)
Mobile LCD Group, Sharp Corporation, Tenri, Japan(1)
2009 IEEE International Electron Devices Meeting (IEDM)(1)
IEEE Transactions on Electron Devices(1)
IEEE(2)
Baltimore, MD, USA(1)
Gate Oxide(2)
Threshold Voltage(2)
Active Region(1)
Anisotropy(1)
Average Mobility(1)

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Integration of single crystal Si TFTs and circuits on a large glass substrate

Y. Takafuji;Y. Fukushima;K. Tomiyasu;M. Takei;Y. Ogawa;K. Tada;S. Matsumoto;H. Kobayashi;Y. Watanabe;E. Kobayashi;S. R. Droes;A.T. Voutsas;J. Hartzell

2009 IEEE International Electron Devices Meeting (IEDM)

Year: 2009 | Conference Paper |

Cited by: Papers (1) | Patents (127)

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Submicron single crystal-Si TFTs and a test circuit are integrated on a 320 mm × 400 mm ( Gen 1 ) glass substrate for the first time, by transferring devices using hydrogen exfoliation and direct bonding without adhesive. Characteristics of the NMOS-TFT is comparable with that of SOI, while PMOS-TFT shows some degradation of sub-threshold swing. Transferred CMOS show high performance and shift reg...Show More

Integration of single crystal Si TFTs and circuits on a large glass substrate

Y. Takafuji;Y. Fukushima;K. Tomiyasu;M. Takei;Y. Ogawa;K. Tada;S. Matsumoto;H. Kobayashi;Y. Watanabe;E. Kobayashi;S. R. Droes;A.T. Voutsas;J. Hartzell

2009 IEEE International Electron Devices Meeting (IEDM)

Year: 2009 | Conference Paper |

Sequential lateral solidification processing for polycrystalline Si TFTs

M.A. Crowder;A.T. Voutsas;S.R. Droes;M. Moriguchi;Y. Mitani

IEEE Transactions on Electron Devices

Year: 2004 | Volume: 51, Issue: 4 | Journal Article |

Cited by: Papers (35)

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The sequential lateral solidification (SLS) process is an excimer-laser projection-based scheme for crystallization of thin films on amorphous substrates. This method can be used to readily produce a wide range of microstructures through manipulation of grain boundary placement within the crystallized material. In this paper, we focus on the 2-shot SLS process for crystallization of thin Si films ...Show More

Sequential lateral solidification processing for polycrystalline Si TFTs

M.A. Crowder;A.T. Voutsas;S.R. Droes;M. Moriguchi;Y. Mitani

IEEE Transactions on Electron Devices

Year: 2004 | Volume: 51, Issue: 4 | Journal Article |

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