Author details
![Image of author Christian Gontrand](/mediastore/IEEE/content/freeimages/6287639/9312710/9541403/gontr-3114383-small.gif)
Christian Gontrand
Also published under: C. Gontrand
Affiliation
National Institute of Applied Sciences of Lyon (INSA Lyon), Villeurbanne, France
IEP
INSA—Fès
Université Euro-Méditerranéenne de Fès, Fès, Morocco
Biography
Christian Gontrand was born in Montpellier, France. He received the M.Sc., Ph.D., and State Doctorate degrees in electronics from the Universiteì des Sciences et Techniques du Languedoc, Montpellier, in 1977, 1982, and 1987, respectively. From 1982 to 1984, he worked with Thomson “Laboratoire Central de Recherche (LCR)” Orsay, where his areas of interest include theoretical (electrical transport) and experimental (noise) of microwave devices (TEGFETs/HEMTs). Since 1988, he is with the Laboratoire de Physique de la Matie‘re (LPM/INSA), Villeurbanne, as a Research Assistant Professor. From 1988 to 1996, he was the technical charge of the new “Centre de Microeìlectronique de la Reìgion Lyonnaise (CIMIRLY)” and worked on new RF compatible silic... Author's Published Works