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Normal incidence, long-wave infrared InAs/In/sub 0.15/Ga/sub 0.85/As dots-in-well detectors grown by molecular beam epitaxy
S. Krishna;S. Raghavan;P. Rotella;B. Fuchs;A. Stintz;C. Morath;Dang Le;S.W. Kennerly
International Conference on Molecular Bean Epitaxy
Year: 2002 | Conference Paper |
In the past few years, there has been active research on studying the performance characteristics of quantum dot infrared detectors (QDIPs) for mid-wave infrared (MWIR, 3-5 /spl mu/m) and long-wave infrared (LWIR, 8-12 /spl mu/m) applications ranging from night vision cameras and battle recognition systems to chemical spectroscopy and remote sensing. Present day photon detectors in this wavelength...Show More
Normal incidence long-wave infrared InAs/In/sub 0.15/Ga/sub 0.85/As DWELL detectors operating at 8.2 /spl mu/m
S. Krishna;S. Raghavan;B. Fuchs;A. Stintz;K. Malloy;C. Morath;Dang Le;D.A. Cardimona
60th DRC. Conference Digest Device Research Conference
Year: 2002 | Conference Paper |
The self-assembled InAs/GaAs quantum dot system is grown by molecular beam epitaxy (MBE) and metal organic chemical vapor deposition (MOCVD). The intersubband and the bound to continuum spacing between the particle-in-a-box like energy levels in these dots lie in the range of 60-450meV (3-12 /spl mu/m). In contrast to the quantum well infrared photodetectors (QWIPs), QD detectors can detect normal...Show More
150 nm tuning in a grating-coupled external cavity quantum dot laser
H. Li;G.T. Liu;P. Mvarangis;T.C. Newell;A. Stintz;B. Fuchs;K.I. Malloy;L.F. Lester
Conference Digest. 2000 Conference on Lasers and Electro-Optics Europe (Cat. No.00TH8505)
Year: 2000 | Conference Paper |
Cited by: Patents (2)
Summary form only given. A grating-coupled external cavity quantum dot laser with a 150 nm tunable range is presented. The lasing emission for various wavelengths is shown. The lasing linewidth is about 3 nm. Significantly, no failure of lasing occurs across the energy gap between the ground and the first excited states. This large tunable range is the product of the rapid carrier filling of the h...Show More
183 nm tuning range in a grating-coupled external-cavity quantum dot laser
P.M. Varangis;H. Li;G.T. Liu;T.C. Newell;A. Stintz;B. Fuchs;K.J. Malloy;L.F. Lester
Conference Digest. 2000 IEEE 17th International Semiconductor Laser Conference. (Cat. No.00CH37092)
Year: 2000 | Conference Paper |
Cited by: Patents (3)
We report on the 183 nm tuning range of an anti-reflection coated quantum dot (QD) laser using a diffraction grating in an external-cavity configuration. Over this range the laser threshold current density varied between 0.25 kA/cm/sup 2/ and 2.22 kA/cm/sup 2/ with an average value of 0.84 kA/cm/sup 2/. The laser active region is composed of a single InAs quantum dot layer confined in the middle o...Show More
150-nm tuning range in a grating-coupled external cavity quantum-dot laser
H. Li;G.T. Liu;P.M. Varangis;T.C. Newell;A. Stintz;B. Fuchs;K.J. Malloy;L.F. Lester
An antireflection (AR) coated single-stack quantum-dot (QD) laser in a grating-coupled external cavity is shown to operate across a tuning range from 1.095 μm to 1.245 μm. This 150-nm range extends from the energy levels of the ground state to excited states. At any wavelength, the threshold current density is no greater than 1.1 kA/cm2. This large tunable range is the product of the rapid carrier...Show More
Optical characteristics and low linewidth enhancement factor in 1.2 /spl mu/m quantum dot lasers
T.C. Newell;H. Li;A. Stintz;D. Bossert;B. Fuchs;K.J. Malloy;L.F. Lester
The QD density of states, which theoretically is a series of delta function spikes at the quantized energy levels, indicates that threshold current densities are not only low but also temperature independent. Another important property is the degree to which carrier density variations alter the index of refraction of the active layer. Large values of dn/dN can result in antiguiding in narrow strip...Show More
Gain and linewidth enhancement factor in InAs quantum-dot laser diodes
T.C. Newell;D.J. Bossert;A. Stintz;B. Fuchs;K.J. Malloy;L.F. Lester
Amplified spontaneous emission measurements are investigated below threshold in InAs quantum-dot lasers emitting at 1.22 μm. The dot layer of the laser was grown in a strained quantum well (QW) on a GaAs substrate. Ground state gain is determined from cavity mode Fabry-Perot modulation. As the injection current increases, the gain rises super-linearly while changes in the index of refraction decre...Show More
Optical characteristics of 1.24-μm InAs quantum-dot laser diodes
L.F. Lester;A. Stintz;H. Li;T.C. Newell;E.A. Pease;B.A. Fuchs;K.J. Malloy
The optical characteristics of the first laser diodes fabricated from a single-InAs quantum-dot layer placed inside a strained InGaAs QW are described. The saturated modal gain for this novel laser active region is found to be 9-10 cm/sup -1/ in the ground state. Room temperature threshold current densities as low as 83 A/cm2 for uncoated 1.24-μm devices are measured, and operating wavelengths ove...Show More
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