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We propose a highly directional millimeter-scale waveguide grating antenna (WGA). The simulation directionality is close to 90% while the length of the WGA is longer than 4 mm. And the large critical dimension of this structure moderates the fabrication process.Show More
In this paper, we propose a novel polarization beam splitter (PBS) based on a 3-waveguide directional coupler (DC) with a Si3N4-loaded horizonal slot waveguide as the bridge. The performance of the device can be further improved by adding a filter at the thru port.Show More
A 1 × 4 loop-mirror-integrated folded silicon-photonics arrayed waveguide grating (AWG) is designed and fabricated on an SOI wafer with two kinds of thickness of silicon areas. The introducing of two silicon thicknesses benefits the design of de/multiplexing devices with an optimal performance and large fabrication tolerances. Transition structures are used to connect 220-nm-thick sections with 34...Show More
In this letter, we demonstrated a 1×4 folded silicon photonics arrayed waveguide grating integrated with ring-mirrors at the end of arrayed waveguides on SOI platform. Each reflective ring-mirror is composed of a 1×2 MMI splitter/combiner and a bend silicon nanowire waveguide in the end of each arrayed waveguide. Compared to a normal arrayed waveguide grating, the structure of the ring-mirror-inte...Show More
Summary form only given. Silicon photonics circuits are playing more and more important role in optical communication and interconnect fields [1, 2]. Many silicon CMOS technique compatible photonics integrated devices are reported [3, 4]. Most of those silicon components are based on optical waveguide. But conventional integrated optical waveguide is without memory feature. One hand, which makes u...Show More
We propose and experimentally demonstrate a novel scheme for simultaneous optical sensing of electric memory cell states. Results show that the effective sensing speed can be enhanced by 976 times with 100 nm spectrum ranges.Show More
We proposed and demonstrated a novel scheme for simultaneous optical sense electric memory cell states aiming to enhance the data-reading speed showing significant improvement. For the traditional electrical read-out method, it is impossible to simultaneously sense the information from more than two memory cells on the same bit-line (BL). However, with photonics, different wavelengths do not inter...Show More
We propose an electrically programmable, multi-level non-volatile photonics memory cell (PMC) fabricated by standard CMOS compatible processes. A micro-ring resonator (MRR) was built using the PMC to demonstrate programmable and erase functions.Show More
We demonstrate a low-loss and broad-bandwidth fiber-to-waveguide converter with a 3-D functional SiO2 taper for silicon photonics. The converter is composed of a cantilevered SiO2 waveguide and Si nano-tapers. In order to reduce the loss from the cleaved fiber, a 3-D functional SiO2 taper is designed to compress the size of optical mode field. Using cleaved optical fibers with a mode field diamete...Show More
A 3D silicon photonics packaging architecture based on a Cu-metallized Si-photonics through-silicon-via (TSV) interposer has been designed and experimentally demonstrated, which achieves flexible and compact electro-optical integration of different functionalities for high density on-board optics module. 3D photonics architecture for on-package integration overcomes the difficulties in sophisticat...Show More
3D electro-optical integration based on a Cu-based Si-photonics TSV interposer has been demonstrated for integrated optical communication applications. The photonics TSV interposer consisting of monolithically integrated TSV, modulators and photodetectors, enabling a 30 Gbps-data-rate.Show More
CMOS-compatible silicon photonics technology is becoming a promising candidate to realize very large-scale complex photonics-CMOS integration system. For the purpose of CMOS-compatible complete-Cu integration, a traveling-wave electrode (TWE) of a silicon optical modulator via Cu-based back-end-of-line (BEOL) process is demonstrated in this work. A latticed Cu surface pattern is designed for the r...Show More
We present silicon-based WDM photonics link for 240 Gb/s data transmission on 1.3 μm with above 50 GHz silicon modulator and 20GHz Germanium photo-detector. Photonics link has a bandwidth of 53.4GHz limited by the impedance mismatch.Show More
With the ever-increasing demand for small channel spacing in the dense wavelength division multiplexing technology, and the wavelength shift arising from the fabrication dimensional sensitivity of the silicon optical communication devices, wavelength tuning methods for silicon multiplexer/demultiplexer are therefore of great interest. Thermo-optically tunable silicon arrayed waveguide grating (AWG...Show More
We present the design of a highly efficient polarization splitter-rotator that operates at both 1310- and 1550-nm wavelength bands in a 220-nm silicon-on-insulator platform. The proposed polarization splitter-rotator has a simulated insertion loss of -0.9 dB at 1310 nm and -1 dB at 1550 nm. This is the first theoretical demonstration of a biwavelength polarization splitter-rotator. This letter is ...Show More
High-performance silicon optical modulator is demonstrated with up to 50-Gb/s data rate upon 1.3-Vpp. The measured extinction ratios of the optical eye-diagrams are respectively 5.97-dB, 5.13-dB and 4.44-dB at 28-Gb/s, 40-Gb/s and 50-Gb/s data rate.Show More
We demonstrate the first silicon-based parallel-fed travelling-wave photodetector array (TWPDA). Impedance-matched travelling-wave electrode is designed considering periodic loading effect. The demonstrated up to 4-channel TWPDAs show >10GHz 3-dB bandwidths and ∼0.75A/W responsivity using 30µm-length PDs.Show More
A mode converter is fabricated with SiON to reduce the coupling loss between SiN waveguide and cleaved single-mode-fiber. The coupling loss is 1.2dB/facet and 1.4dB/facet for TE and TM mode, respectively, with 3dB alignment tolerance of ±3.5µm.Show More
We demonstrate the first example of a polarization splitter and rotator (PSR) at 1310 nm built on a silicon-on-insulator platform using 248-nm deep-ultraviolet lithography. The PSR is constructed with a directional coupler, a bilevel taper-based TM0-to-TE1 mode converter, and an asymmetric Mach-Zehnder-based TE1-to-TE0 mode converter. A worst-case TM0-to-TE0 mode-conversion loss of 2 dB, with pola...Show More
Silicon photonics have progressed to a point where the next step for commercialization depends on the accessibility of manufacturing foundries. The implementation of a fabless foundry model using standardized process technology platforms is crucial for that to occur. Research and development (R&D) foundries are beginning to play bigger roles in transforming silicon photonics into a mature technolo...Show More
Si photonic devices are sensitive to the change in refractive index on the Si-on-insulator (SOI) platform. One of the critical limitations in the compact 3D photonic integration circuit is the through-Si-via (TSV)-induced stress, which affects the performances of Si photonic devices integrated in interposer. We build a model to analyze and simulate the wavelength shift of the ring resonator caused...Show More
We design and compare two kinds of polarization rotators based on a partially etched waveguide: 1) the quadrate pattern and 2) the tapered pattern in the partially etched area. The devices are fabricated on a commercially available 200-mm silicon on insulator wafer with a 340 nm-thick top silicon and a 2 μm-thick buried dioxide. The tapered design realizes a polarization extinction ratio of ~ 13.3...Show More
In order to make projector compact and efficient, we propose that the 2D laser source module is consisted of VCSEL array and micro-lens array. It describes packaging structure design of VCSEL array and thermal resistance calculation. A thermal 3D analysis of 3 ×3 array based on the finite-element method (FEM) is presented. The analysis shows that the maximum internal temperature of a VCSEL array r...Show More