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Antoine Rauzy - IEEE Xplore Author Profile

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Author details

Antoine Rauzy

Also published under: A. Rauzy

Publications

20

Citations

372

Publications by Year

19962024

Co-Authors:

Suprasad V. AmariPaolo BallariniMichel BatteuxChaire Blériot-FabreLeo Chartier

Show All Co-Authors (21)

Antoine Rauzy

Also published under: A. Rauzy

Affiliation

Norwegian University of Science and Technology, Trondheim, Norway

Publication Topics

Language Model,
Petri Nets,
State Variables,
System Architecture,
Domain-specific Languages,
Engineering Disciplines,
Finite Structure,
Illustrative Example,
Largest Element,
Level Of Abstraction,
Partial Order,
Safety Analysis

Biography

Antoine Rauzy,Professor at the Norwegian University of Science and Technology, Department of Production and Quality Engineering. Head of the chair Blériot-Fabre “Dependable Embedded Systems” founded by Safran at CentraleSupélec. Member of the board of International Conferences and Journals (Reliability Engineering and System Safety, Journal of Risk and Reliability…).(Based on document published on 30 March 2017).

Publications

20

Citations

372

Publications by Year

19962024

Co-Authors:

Suprasad V. Amari
Paolo Ballarini
Michel Batteux
Chaire Blériot-Fabre
Leo Chartier

Show All Co-Authors (21)

Author's Published Works

Search History

Showing 1-25 of 343 results

Journals (171)

Conferences (166)

Early Access Articles (6)

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Weifeng Sun(335)
Siyang Liu(154)
Long Zhang(96)
Jing Zhu(76)
Jiaxing Wei(65)
National ASIC System Engineering Research Center, Southeast University, Nanjing, China(160)
CSMC Technologies Corporation, Wuxi, China(46)
National ASIC System Engineering Research Center, School of Electronic Science and Engineering, Southeast University, Nanjing, China(25)
CSMC Technologies Company, Wuxi, China(11)
National ASIC System Engineering Research Center, Southeast University, Nanjing, Jiangsu, China(10)
IEEE Transactions on Electron Devices(65)
IEEE Transactions on Power Electronics(27)
IEEE Electron Device Letters(20)
IEEE Transactions on Device and Materials Reliability(16)
IEEE Journal of Emerging and Selected Topics in Power Electronics(13)
IEEE(343)
Media(2)
Chengdu, China(9)
Bremen, Germany(8)
Hangzhou, China(7)
Hong Kong, China(7)
Shanghai, China(7)
Drift Region(70)
High Voltage(68)
Impact Ionization(56)
Power Devices(55)
Gate Oxide(51)

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Multiwindow Implantation Method in Vertical Hall Devices for High Sensitivity

Guiqiang Zheng;Nannan Cheng;Yichen Li;Jiawei Dou;Qingyin Zhong;Jie Ma;Lanlan Yang;Xiaofeng Sun;Dejin Wang;Sen Zhang;Yongjia Li;Long Zhang;Siyang Liu;Weifeng Sun

IEEE Transactions on Electron Devices

Year: 2025 | Early Access Article |

A novel vertical Hall device (VHD), featuring a waved boundary magnetic-sensitive well, is proposed for the first time in this article. By applying multiwindow implantation (MWI) method in 0.15-μm bipolar–CMOS–DMOS (BCD) platform, nonuniform doping profile in lateral and vertical directions is realized and the path of bias current is changed subsequently. The current path with long route and low r...Show More

Multiwindow Implantation Method in Vertical Hall Devices for High Sensitivity

Guiqiang Zheng;Nannan Cheng;Yichen Li;Jiawei Dou;Qingyin Zhong;Jie Ma;Lanlan Yang;Xiaofeng Sun;Dejin Wang;Sen Zhang;Yongjia Li;Long Zhang;Siyang Liu;Weifeng Sun

IEEE Transactions on Electron Devices

Year: 2025 | Early Access Article |

A Flexible Low Dropout Regulator Based on InSnO Thin-film Transistors with Superior Bending Robustness and Ultra-low Quiescent Current

Tingrui Huang;Zuoxu Yu;Yuzhen Zhang;Di Gui;Mingming Liu;Kaizhi Sui;Wenting Xu;Guangan Yang;Wangran Wu;Weifeng Sun

IEEE Electron Device Letters

Year: 2025 | Early Access Article |

In this work, a flexible low dropout regulator (LDO) based on InSnO (ITO) thin film transistors (TFTs) on a 50-μm polyimide (PI) substrate is demonstrated for the first time. The LDO is realized through integrated depleted- and enhanced-mode (D-mode and E-mode) ITO TFTs with 6-nm and 4-nm thick ITO channel layers respectively. Low-current design in 4-transistors (4T) voltage reference and restrict...Show More

A Flexible Low Dropout Regulator Based on InSnO Thin-film Transistors with Superior Bending Robustness and Ultra-low Quiescent Current

Tingrui Huang;Zuoxu Yu;Yuzhen Zhang;Di Gui;Mingming Liu;Kaizhi Sui;Wenting Xu;Guangan Yang;Wangran Wu;Weifeng Sun

IEEE Electron Device Letters

Year: 2025 | Early Access Article |

A High-Efficiency Control Method With Lossless Current Sensing and Seamless Transition for Four-Switch Buck-Boost Converter

Qi Liu;Qi Xu;Qinsong Qian;Song Ding;Weifeng Sun

IEEE Transactions on Power Electronics

Year: 2025 | Early Access Article |

The quadrilateral control method for Four-switch Buck-Boost (FSBB) converter can enable all of the power switches to achieve ZVS, thereby achieving high power density. However, the inductor current requires to be sensed and regulated to ensure the realization of ZVS, which will introduce the additional losses and degrade the efficiency. In this paper, a high-efficiency control strategy based on lo...Show More

A High-Efficiency Control Method With Lossless Current Sensing and Seamless Transition for Four-Switch Buck-Boost Converter

Qi Liu;Qi Xu;Qinsong Qian;Song Ding;Weifeng Sun

IEEE Transactions on Power Electronics

Year: 2025 | Early Access Article |

Experimental Investigation on the Electrical Properties of a-InGaZnO Thin-Film Transistors Under Total Dose Ionizing Radiation

Guangan Yang;Geng Huang;Hong Zhu;Haotian Wu;Tianzhen Li;Tingrui Huang;Zuoxu Yu;Yong Xu;Weifeng Sun;Wangran Wu;Jinshun Bi

IEEE Electron Device Letters

Year: 2025 | Volume: 46, Issue: 3 | Journal Article |

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This work conducts an experimental study on the effects of total-ionizing-dose (TID) on amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistors. The threshold voltage ( ${V}_{\text {th}}\text {)}$ exhibited a negative shift during irradiation, concomitant with a decline in carrier mobility ( $\mu _{\text {FE}}\text {)}$ and an increase in off-current. The TID-induced H-related traps i...Show More

Experimental Investigation on the Electrical Properties of a-InGaZnO Thin-Film Transistors Under Total Dose Ionizing Radiation

Guangan Yang;Geng Huang;Hong Zhu;Haotian Wu;Tianzhen Li;Tingrui Huang;Zuoxu Yu;Yong Xu;Weifeng Sun;Wangran Wu;Jinshun Bi

IEEE Electron Device Letters

Year: 2025 | Volume: 46, Issue: 3 | Journal Article |

High-Precision Time Resolution SPAD Array Readout Circuit Based on Event-Driven

Lixia Zheng;Shi Luo;Yongqi Han;Yanna Zheng;Jin Wu;Weifeng Sun

IEEE Journal of Selected Topics in Quantum Electronics

Year: 2025 | Volume: 31, Issue: 5: Quantum Materials and Quantum Devices | Journal Article |

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With the rapid advancement of three-dimensional laser ranging imaging technology and the continuous expansion of array scale, more demanding requirements such as stronger anti-interference capability, higher precision, and lower power consumption are imposed on the readout circuit. Nevertheless, with the expansion of the array scale, the transmission of high-frequency clock signals is affected by ...Show More

High-Precision Time Resolution SPAD Array Readout Circuit Based on Event-Driven

Lixia Zheng;Shi Luo;Yongqi Han;Yanna Zheng;Jin Wu;Weifeng Sun

IEEE Journal of Selected Topics in Quantum Electronics

Year: 2025 | Volume: 31, Issue: 5: Quantum Materials and Quantum Devices | Journal Article |

A 870 ppm/V 53 ppm/ $^{\circ}$ C 7 MHz Non-Trimmed RC Relaxation Oscillator Using Mixed-Signal Compensation Loop From -40 $^{\circ}$ C to 165 $^{\circ}$ C

Jianlin Xia;Yongjia Li;Weiyue Qu;Zhongyuan Fang;Jin Wu;Feng Lin;Encheng Zhu;Weifeng Sun

IEEE Transactions on Circuits and Systems I: Regular Papers

Year: 2025 | Early Access Article |

In this paper, an RC relaxation oscillator exhibiting robust performance over an extended temperature and supply range is proposed. By incorporating a digitally-assisted calibration loop, the design eliminates the errors from switch on-resistance, comparator offset and propagation delay. Fabricated using a 180 nm bipolar-CMOS-DMOS (BCD) process technology, the oscillator operates at a frequency of...Show More

A 870 ppm/V 53 ppm/ $^{\circ}$ C 7 MHz Non-Trimmed RC Relaxation Oscillator Using Mixed-Signal Compensation Loop From -40 $^{\circ}$ C to 165 $^{\circ}$ C

Jianlin Xia;Yongjia Li;Weiyue Qu;Zhongyuan Fang;Jin Wu;Feng Lin;Encheng Zhu;Weifeng Sun

IEEE Transactions on Circuits and Systems I: Regular Papers

Year: 2025 | Early Access Article |

Influences of Adjacent High Voltage on the Characteristics and Reliability of SOI Power Devices for Automotive Application

Ran Ye;Jiaojing Bian;Hao Luo;Qiao Kang;Siyang Liu;Long Zhang;Weifeng Sun;Li Lu;Chaoqi Xu;Penglong Xu;Feng Lin

IEEE Transactions on Electron Devices

Year: 2025 | Volume: 72, Issue: 2 | Journal Article |

Cited by: Papers (1)

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Silicon-on-insulator (SOI) bipolar-CMOS-DMOS (BCD) technologies based on the 0.18- $\mu $ m process node are popular for automotive applications due to their superior features. In the practical ICs, the devices are usually arranged tightly to balance the performance and chip area. As for the p-type lateral double-diffused MOS (pLDMOS), the drain and source are both applied on the high voltage wha...Show More

Influences of Adjacent High Voltage on the Characteristics and Reliability of SOI Power Devices for Automotive Application

Ran Ye;Jiaojing Bian;Hao Luo;Qiao Kang;Siyang Liu;Long Zhang;Weifeng Sun;Li Lu;Chaoqi Xu;Penglong Xu;Feng Lin

IEEE Transactions on Electron Devices

Year: 2025 | Volume: 72, Issue: 2 | Journal Article |

A SPAD Image Sensor With Main-Sub-TDC-Based Coincidence Detection

Chenggong Wan;Yi Zhu;Yingjie Ma;Xue Li;Lixia Zheng;Jin Wu;Weifeng Sun

IEEE Transactions on Circuits and Systems I: Regular Papers

Year: 2025 | Volume: 72, Issue: 1 | Journal Article |

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Light detection and ranging (Lidar) is usually enabled by Single-Photon Avalanche Detector (SPAD) sensors which may be falsely triggered by ambient light. Coincidence detection can suppress the ambient light at the cost of the lateral resolution. A $64\times 64$ SPAD image sensor with coincidence detection is proposed for Lidar. A main-sub time-to-digital converter (TDC), in which the main TDC i...Show More

A SPAD Image Sensor With Main-Sub-TDC-Based Coincidence Detection

Chenggong Wan;Yi Zhu;Yingjie Ma;Xue Li;Lixia Zheng;Jin Wu;Weifeng Sun

IEEE Transactions on Circuits and Systems I: Regular Papers

Year: 2025 | Volume: 72, Issue: 1 | Journal Article |

Monolithically Integrated Bidirectional Gate ESD Protection Scheme of p-GaN Power HEMT by Dual-Gate Device Technology

Yanfeng Ma;Sheng Li;Mingfei Li;Weihao Lu;Lixi Wang;Jie Ma;Ran Ye;Jiaxing Wei;Long Zhang;Chi Zhang;Siyang Liu;Weifeng Sun

IEEE Transactions on Power Electronics

Year: 2025 | Volume: 40, Issue: 2 | Journal Article |

Cited by: Papers (1)

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This letter proposes a monolithically integrated bidirectional gate electrostatic discharge protection scheme for p-GaN power high-electron-mobility transistors (HEMTs), in which a dual-gate HEMT is designed as the discharging transistor. With this protection scheme, the forward/reverse transmission line pulsing failure current is enhanced from 0.156 A/0.08 A to 1.36 A/5.26 A, almost without sacri...Show More

Monolithically Integrated Bidirectional Gate ESD Protection Scheme of p-GaN Power HEMT by Dual-Gate Device Technology

Yanfeng Ma;Sheng Li;Mingfei Li;Weihao Lu;Lixi Wang;Jie Ma;Ran Ye;Jiaxing Wei;Long Zhang;Chi Zhang;Siyang Liu;Weifeng Sun

IEEE Transactions on Power Electronics

Year: 2025 | Volume: 40, Issue: 2 | Journal Article |

A 0.3–28-GHz Frequency Range, 1.2-dB Noise Figure, Cascode Distributed LNA With Wide Temperature Range for Satellite Communications

Xiaodong Han;Qiangji Wang;Zhongliang Li;Weibin Qin;Jiawen Wang;Haonan Fan;Guanda Wang;Wangchen Fan;Zhichao Xu;Wenbin Wang;Weifeng Sun;Zhongyuan Fang

IEEE Microwave and Wireless Technology Letters

Year: 2025 | Volume: 35, Issue: 1 | Journal Article |

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A broadband cascode distributed low-noise amplifier (CDLNA) with a wide operating temperature range is proposed in this work. A series of diodes are used as bias networks to achieve temperature compensation. To enhance the gain level in the passband, the negative resistance network is employed to offset drain transmission line losses. An attenuator based on reverse-biased diodes and resistors is d...Show More

A 0.3–28-GHz Frequency Range, 1.2-dB Noise Figure, Cascode Distributed LNA With Wide Temperature Range for Satellite Communications

Xiaodong Han;Qiangji Wang;Zhongliang Li;Weibin Qin;Jiawen Wang;Haonan Fan;Guanda Wang;Wangchen Fan;Zhichao Xu;Wenbin Wang;Weifeng Sun;Zhongyuan Fang

IEEE Microwave and Wireless Technology Letters

Year: 2025 | Volume: 35, Issue: 1 | Journal Article |

Modeling and Design of Load Current Based Adaptive Voltage Positioning (AVP) Control for Multiphase Buck Converter Using Digital Current Estimation Algorithm

Lingyun Li;Shen Xu;Haiqing Zhang;Yijie Qian;Weifeng Sun

IEEE Transactions on Power Electronics

Year: 2025 | Volume: 40, Issue: 1 | Journal Article |

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This article proposes a load current-based adaptive voltage positioning (AVP) control scheme, which applies the load current as the current injection information directly instead of the inductor current feedback of the existing research, the proposed architecture does not need the inner current loop and the entire loop bandwidth only depends on the voltage loop, so the control bandwidth is increas...Show More

Modeling and Design of Load Current Based Adaptive Voltage Positioning (AVP) Control for Multiphase Buck Converter Using Digital Current Estimation Algorithm

Lingyun Li;Shen Xu;Haiqing Zhang;Yijie Qian;Weifeng Sun

IEEE Transactions on Power Electronics

Year: 2025 | Volume: 40, Issue: 1 | Journal Article |

High-Frequency High-Power Density Multicell Transformer-Coupled Input-Series-Output-Parallel (ISOP) Double Clamp ZVS Flyback Converter

Song Ding;Zhihong Zhao;Qi Liu;Feng Hong;Chunyan Nie;Lei Li;Li Chen;Weifeng Sun;Qinsong Qian;Baojian Ji

IEEE Journal of Emerging and Selected Topics in Industrial Electronics

Year: 2025 | Volume: 6, Issue: 1 | Journal Article |

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Double-clamp zero-voltage-switching (DCZVS) full-bridge flyback converter is one of the most attractive solutions for high-power density applications with wide input range, because of its features of primary-side regulation and excellent soft-switching. By analyzing the zero-voltage switching process and the maximum output power at maximum flux, this article reveals that the dead-time is one of th...Show More

High-Frequency High-Power Density Multicell Transformer-Coupled Input-Series-Output-Parallel (ISOP) Double Clamp ZVS Flyback Converter

Song Ding;Zhihong Zhao;Qi Liu;Feng Hong;Chunyan Nie;Lei Li;Li Chen;Weifeng Sun;Qinsong Qian;Baojian Ji

IEEE Journal of Emerging and Selected Topics in Industrial Electronics

Year: 2025 | Volume: 6, Issue: 1 | Journal Article |

A Dual Channel Push Pull Clamped-Interlock Resonant Gate Driver for the Secondary-Side MOSFETs of LLC-DCX

Ziyan Zhou;Qiang Luo;Yufan Wang;Yuefei Sun;Qinsong Qian;Weifeng Sun

IEEE Transactions on Industrial Electronics

Year: 2025 | Volume: 72, Issue: 2 | Journal Article |

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The LLC dc transformer (LLC-DCX), due to its soft-switching characteristics, achieves high-efficiency energy transfer at high frequencies and is extensively used in high power density applications. However, the drive loss of conventional drive integrated circuits (ICs) is proportional to the switching frequency, leading to disproportionately high gate drive loss at higher frequencies, thereby limi...Show More

A Dual Channel Push Pull Clamped-Interlock Resonant Gate Driver for the Secondary-Side MOSFETs of LLC-DCX

Ziyan Zhou;Qiang Luo;Yufan Wang;Yuefei Sun;Qinsong Qian;Weifeng Sun

IEEE Transactions on Industrial Electronics

Year: 2025 | Volume: 72, Issue: 2 | Journal Article |

A Rugged 1200V P-channel LDMOS in Bipolar-CMOS-DMOS Process with Global Potential Control Technology

Chengwu Pan;Shipeng Chang;Jingjing Hong;Nailong He;Jie Ma;Sen Zhang;Long Zhang;Siyang Liu;Weifeng Sun

2024 IEEE International Conference on Integrated Circuits, Technologies and Applications (ICTA)

Year: 2024 | Conference Paper |

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The ultra-high voltage P-channel later diffused MOS (PLDMOS) is difficult to be integrated in 1200 V high voltage integrated circuits for level-down function, which limits some functions such as high side fault detection to apply. In this work, the global potential control technology solves the problems of leakage increase and on-state current expansion caused by PLDMOS. The isolation structure wi...Show More

A Rugged 1200V P-channel LDMOS in Bipolar-CMOS-DMOS Process with Global Potential Control Technology

Chengwu Pan;Shipeng Chang;Jingjing Hong;Nailong He;Jie Ma;Sen Zhang;Long Zhang;Siyang Liu;Weifeng Sun

2024 IEEE International Conference on Integrated Circuits, Technologies and Applications (ICTA)

Year: 2024 | Conference Paper |

0.15μm BCD Platform with High Sensitivity Hall Device and Low Noise CMOS for Sensor IC Applications

Guiqiang Zheng;Qingyin Zhong;Jie Ma;Nannan Cheng;Yichen Li;Yongjia Li;Xiaofeng Sun;Dejin Wang;Sen Zhang;Long Zhang;Siyang Liu;Weifeng Sun

2024 IEEE 17th International Conference on Solid-State & Integrated Circuit Technology (ICSICT)

Year: 2024 | Conference Paper |

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In this paper, a 40V 0.15μm Bipolar-CMOS-DMOS (BCD) platform with high sensitivity Hall device and low noise CMOS device is proposed. The lateral Hall device (LHD) with a current-related sensitivity (SI) of 378V/AT and the vertical Hall device (VHD) with a SIof 161V/AT are integrated in the platform without extra masks. The low noise CMOS with fluoride ion implantation shows a 10 times optimizatio...Show More

0.15μm BCD Platform with High Sensitivity Hall Device and Low Noise CMOS for Sensor IC Applications

Guiqiang Zheng;Qingyin Zhong;Jie Ma;Nannan Cheng;Yichen Li;Yongjia Li;Xiaofeng Sun;Dejin Wang;Sen Zhang;Long Zhang;Siyang Liu;Weifeng Sun

2024 IEEE 17th International Conference on Solid-State & Integrated Circuit Technology (ICSICT)

Year: 2024 | Conference Paper |

Suppression of Back-Gating Effect by Integrated Substrate Termination Network for 200V Monolithic GaN Half-Bridge Power IC

Mengyao Zhao;Yifei Zheng;Yanfeng Ma;Yuan Sun;Denggui Wang;Chuanqi Pan;Jianjun Zhou;Sheng Li;Long Zhang;Siyang Liu;Weifeng Sun

2024 IEEE 17th International Conference on Solid-State & Integrated Circuit Technology (ICSICT)

Year: 2024 | Conference Paper |

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We fabricate a 200V monolithic GaN half-bridge power IC featuring an integrated substrate termination network (ISTN). The ISTN utilizes two-dimensional electron gas resistors to dynamically control the substrate potential so that detrimental back-gating effects and dynamic on-resistance ($\boldsymbol{R_{\mathrm{o}\mathrm{n}}}$) degradation is effectively suppressed. The proposed GaN power IC schem...Show More

Suppression of Back-Gating Effect by Integrated Substrate Termination Network for 200V Monolithic GaN Half-Bridge Power IC

Mengyao Zhao;Yifei Zheng;Yanfeng Ma;Yuan Sun;Denggui Wang;Chuanqi Pan;Jianjun Zhou;Sheng Li;Long Zhang;Siyang Liu;Weifeng Sun

2024 IEEE 17th International Conference on Solid-State & Integrated Circuit Technology (ICSICT)

Year: 2024 | Conference Paper |

Investigating Single-Event Burnout in 4H-SiC Inverters: Experiments and Simulations

Yong Gu;Yurui Yang;Yawen Xv;Hongyang Wen;Xiangyu Hou;Runhua Huang;Ao Liu;Song Bai;Jie Ma;Long Zhang;Siyang Liu;Weifeng Sun

2024 IEEE 17th International Conference on Solid-State & Integrated Circuit Technology (ICSICT)

Year: 2024 | Conference Paper |

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In this paper, the failure mechanism of single-event burnout (SEB) in 4H-SiC inverter is studied by experiments and simulations. The most sensitive region to SEB in 4H-SiC inverter circuit has been identified by conducting pulsed laser simulations of single-event experiments. Experimental evidence demonstrates that the maximum Linear Energy Transfer (LET) value tolerated by 4H-SiC inverter circuit...Show More

Investigating Single-Event Burnout in 4H-SiC Inverters: Experiments and Simulations

Yong Gu;Yurui Yang;Yawen Xv;Hongyang Wen;Xiangyu Hou;Runhua Huang;Ao Liu;Song Bai;Jie Ma;Long Zhang;Siyang Liu;Weifeng Sun

2024 IEEE 17th International Conference on Solid-State & Integrated Circuit Technology (ICSICT)

Year: 2024 | Conference Paper |

A 0-62.50-MHz Configurable Multi-Segment DDFS Chirp Generator for Integrated Satellite Radar Applications in 65-nm CMOS

Yiqing Wang;Xueyong Zhang;Jiang Wu;Jiahao Liu;Jiayi Yuan;Weifeng Sun;Zhongyuan Fang

2024 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)

Year: 2024 | Conference Paper |

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This paper proposes a DDFS digital control module driving an 8-16GHz numerically controlled variable frequency phase-locked loop (PLL). The module utilizes a top-level state machine configuration and control mechanism along with an internal pipeline structure for signal conversion and output, which ensures continuous phase, rapid system response time, and flexible configuration capabilities. By em...Show More

A 0-62.50-MHz Configurable Multi-Segment DDFS Chirp Generator for Integrated Satellite Radar Applications in 65-nm CMOS

Yiqing Wang;Xueyong Zhang;Jiang Wu;Jiahao Liu;Jiayi Yuan;Weifeng Sun;Zhongyuan Fang

2024 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)

Year: 2024 | Conference Paper |

Implementation of Brushless DC Motor Control Chip Based on PWM Technique

Wei Xi;Siyang Liu;Weifeng Sun

2024 9th International Conference on Integrated Circuits and Microsystems (ICICM)

Year: 2024 | Conference Paper |

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In this paper, a brushless DC motor control chip based on PWM technique is proposed. It integrates the rotor position decoder and includes functions for forward and reverse rotation as well as angle selection. The chip integrates the functions of under-voltage protection, over-current protection, and over-temperature protection. This integration enhances the functionality of the chip. The width of...Show More

Implementation of Brushless DC Motor Control Chip Based on PWM Technique

Wei Xi;Siyang Liu;Weifeng Sun

2024 9th International Conference on Integrated Circuits and Microsystems (ICICM)

Year: 2024 | Conference Paper |

A Dual-Channel Four-Switch Resonant Gate Driver for LLC Secondary Side MOSFETs

Ziyan Zhou;Qiang Luo;Yufan Wang;Yuefei Sun;Qinsong Qian;Weifeng Sun

2024 3rd International Conference on Power Systems and Electrical Technology (PSET)

Year: 2024 | Conference Paper |

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Due to its superior soft-switching characteristics, the LLC resonant converter achieves efficient power transmission at high frequencies and is extensively utilized in high power density applications. Conventional drivers exhibit loss that increase proportionally with frequency, resulting in excessive driving loss at high frequencies. To address this, a dual-channel four-switch resonant gate drive...Show More

A Dual-Channel Four-Switch Resonant Gate Driver for LLC Secondary Side MOSFETs

Ziyan Zhou;Qiang Luo;Yufan Wang;Yuefei Sun;Qinsong Qian;Weifeng Sun

2024 3rd International Conference on Power Systems and Electrical Technology (PSET)

Year: 2024 | Conference Paper |

Multiphase Two-loop Control in Digital Controlled Buck Converter with Fast Load Transient

Lingyun Li;Shen Xu;Yijie Qian;Haiqing Zhang;Weifeng Sun

2024 3rd International Conference on Power Systems and Electrical Technology (PSET)

Year: 2024 | Conference Paper |

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With the development of the processes in datacentre servers, the power supply requirements become more and more strict, and the over-regulation issue of VRM needs to be solved in load step transient. In this paper, a multiphase control called multiphase two-loop control is proposed. It applies the unique outer voltage loop and per phase inner current loop structure, to reconstruct the Buck power s...Show More

Multiphase Two-loop Control in Digital Controlled Buck Converter with Fast Load Transient

Lingyun Li;Shen Xu;Yijie Qian;Haiqing Zhang;Weifeng Sun

2024 3rd International Conference on Power Systems and Electrical Technology (PSET)

Year: 2024 | Conference Paper |

An Error Amplifier With Enhanced Slew Rate and Clamp Function Supporting Multi-Mode Control of Four-Switch-Buck-Boost Converter

Haonan Fan;Jiahao Liu;Wangchen Fan;Weifeng Sun;Zhongyuan Fang

2024 IEEE Asia Pacific Conference on Circuits and Systems (APCCAS)

Year: 2024 | Conference Paper |

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This paper proposes a MOSFET-only error amplifier(EA) with clamp function, which reduces the power consumption to $71.7 \mu \mathrm{~A}$. Moreover, the circuit realizes the function of dynamic slewing rate enhancement, which can improve the performance of transient response. The static power consumption of the dynamic slewing rate enhancement module is only $4.7 \mu \mathrm{~A}$, and the slew rate...Show More

An Error Amplifier With Enhanced Slew Rate and Clamp Function Supporting Multi-Mode Control of Four-Switch-Buck-Boost Converter

Haonan Fan;Jiahao Liu;Wangchen Fan;Weifeng Sun;Zhongyuan Fang

2024 IEEE Asia Pacific Conference on Circuits and Systems (APCCAS)

Year: 2024 | Conference Paper |

A CMOS-Integrated Capacitor-Less N-LDO Featuring 1.2-1.8V Output Voltage Range and Low FOM for Edge Biomedical Device Applications

Jiayi Yuan;Wangchen Fan;Weifeng Sun;Zhongyuan Fang

2024 IEEE Biomedical Circuits and Systems Conference (BioCAS)

Year: 2024 | Conference Paper |

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This paper introduces a capacitor-less n-type Low Dropout Regulator (LDO) designed to enhance transient response and expand the output voltage and current range, making it suitable for low-power biomedical System-on-Chip (SoC) applications. Utilizing a Recycling Folded Cascode (RFC) configuration to implement a common-mode feedback loop, this design improves the gain and bandwidth of the regulator...Show More

A CMOS-Integrated Capacitor-Less N-LDO Featuring 1.2-1.8V Output Voltage Range and Low FOM for Edge Biomedical Device Applications

Jiayi Yuan;Wangchen Fan;Weifeng Sun;Zhongyuan Fang

2024 IEEE Biomedical Circuits and Systems Conference (BioCAS)

Year: 2024 | Conference Paper |

High Sensitivity Lateral Hall Device in Silicon on Insulator (SOI) Platform

Guiqiang Zheng;Qingyin Zhong;Jie Ma;Yichen Li;Nannan Cheng;Nailong He;Sen Zhang;Yongjia Li;Long Zhang;Siyang Liu;Weifeng Sun

2024 IEEE SENSORS

Year: 2024 | Conference Paper |

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In this work, a novel lateral Hall device (LHD) with deep trench fingers is designed and fabricated in the O.5 $\mu \mathrm{m}$ silicon-on-insulator (SOI) platform. The deep trench finger serves to regulate the path of bias current in the magnetic-sensitive well, thereby rendering current-related sensitivity $(\mathbf{S}_{\mathbf{I}})$ I insensitive to the size of the signal electrode. The propose...Show More

High Sensitivity Lateral Hall Device in Silicon on Insulator (SOI) Platform

Guiqiang Zheng;Qingyin Zhong;Jie Ma;Yichen Li;Nannan Cheng;Nailong He;Sen Zhang;Yongjia Li;Long Zhang;Siyang Liu;Weifeng Sun

2024 IEEE SENSORS

Year: 2024 | Conference Paper |

A Reconfigurable Auxiliary Circuit for Transient Enhancement in Processor Power Systems With Multiple Voltage Rails

Yijie Qian;Shen Xu;Xinru Wang;Lingyun Li;Weifeng Sun

IEEE Transactions on Industrial Electronics

Year: 2024 | Early Access Article |

This article proposes a practical auxiliary circuit for multiple voltage rails to improve dynamic response under significant load steps with an ultrafast slew rate. The proposed auxiliary circuit consists of a current injection/absorption circuit with nonlinear control that can effectively reduce undershoot and overshoot during transients, a sampling mechanism supporting its independent operation,...Show More

A Reconfigurable Auxiliary Circuit for Transient Enhancement in Processor Power Systems With Multiple Voltage Rails

Yijie Qian;Shen Xu;Xinru Wang;Lingyun Li;Weifeng Sun

IEEE Transactions on Industrial Electronics

Year: 2024 | Early Access Article |

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