By selectively removing the InP cap layer on top of the conventional double-heterojunction InP-InGaAs-InP p-i-n photodiodes (PDs), a PD with high quantum efficiency in the 0.55- to 1.65-mum spectral range was realized. With antireflection coating designed both for 0.85- and 1.3-mum wavelengths, quantum efficiency higher than 80% in the 0.85- to 1.65-mum range and higher than 70% in the 0.55- to 1....Show More
We demonstrate a novel photodiode at a 1.55-μm wavelength: the near-ballistic uni-traveling-carrier photodiode (UTC-PD). After a p/sup +/ delta-doped layer was inserted into the collector of a UTC-PD, near-ballistic transport of photogenerated electrons under high reverse bias voltage (-5 V) and a high output photocurrent (/spl sim/30 mA) was observed. The demonstrated device has been combined wit...Show More
