Author details
Author's Published Works
Scheduled Maintenance on Monday 1/13/2025
Single article sales and account management will be unavailable from 5:00 AM - 7:00 PM ET (09:00 - 23:00 UTC). We apologize for the inconvenience.
Author details
Showing 1-8 of 8 results
- Sort
Sort By
Results
Bulk Undoped GaAs–AlGaAs Substrate-Removed Electrooptic Modulators With 3.7-V-cm Drive Voltage at 1.55 $\mu$ m
IEEE Photonics Technology Letters
Cited by: Papers (18)
Substrate removed bulk GaAs-AlGaAs electrooptic modulators with 3.7-V-cm drive voltage at 1.55 mum were realized. The 1.94-mum-thick undoped GaAs-AlGaAs epilayer removed from its substrate behaves as an electrooptic dielectric layer and has electrodes placed directly on both sides. This allows a very strong modulating electric field overlapping very well with the optical mode. The propagation loss...Show More
Stable polarization operation of 1.3-/spl mu/m wavelength vertical-cavity surface-emitting laser (VCSEL) fabricated by orientation-mismatched wafer bonding
Y.L. Okuno;K.-G. Gan;H.-F. Chou;Y.-J. Chiu;C.S. Wang;S. Wu;J. Geske;E.S. Bjorlin;J.E. Bowers
We present stable polarization of a long-wavelength vertical-cavity surface-emitting laser (LW VCSEL). The polarization control was achieved through growing its active region on a (113)B InP substrate, which was integrated to [001] GaAs-based distributed Bragg reflectors by a wafer-bonding technique. Theoretical investigation showed that to achieve high polarization stability, a large dichroism su...Show More
Stable polarization operation of 1.3 /spl mu/m-wavelength vertical cavity surface emitting laser (VCSEL) fabricated by orientation-mismatched wafer bonding
Y.L. Okuno;K.-G. Gan;H.-F. Chou;Y.-J. Chiu;C. Wang;S. Wu;J. Geske;E.S. Bjorlin;J.E. Bowers
2004 IEEE 19th International Semiconductor Laser Conference, 2004. Conference Digest.
Year: 2004 | Conference Paper |
High-power 1320-nm wafer-bonded VCSELs with tunnel junctions
V. Jayaraman;M. Mehta;A.W. Jackson;S. Wu;Y. Okuno;J. Piprek;J.E. Bowers
A new long-wavelength vertical-cavity surface-emitting laser structure is described that utilizes AlGaAs-GaAs mirrors bonded to AlInGaAs-InP quantum wells with an intracavity buried tunnel junction. This structure offers complete wavelength flexibility in the 1250-1650 nm fiber communication bands and reduces the high free-carrier losses and bonded junction voltage drops in previous devices. The i...Show More
IEEE Account
Purchase Details
Profile Information
Need Help?
- US & Canada: +1 800 678 4333
- Worldwide: +1 732 981 0060
- Contact & Support
- About IEEE Xplore
- Contact Us
- Help
- Accessibility
- Terms of Use
- Nondiscrimination Policy
- Sitemap
- Privacy & Opting Out of Cookies
A not-for-profit organization, IEEE is the world's largest technical professional organization dedicated to advancing technology for the benefit of humanity.
© Copyright 2025 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.