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Prabakaran Poopalan - IEEE Xplore Author Profile

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An optical setup comprising an external Fabry-Pérot (FP) cavity that maintains ultrashort pulse spatial and temporal coherence, is proposed to generate continuous sub-terahertz repetition rate ultrashort pulses (USP). Analytical results from different sets of pulse-to-pulse carrier-envelop phase offset (ΔφCEO) output conditions manifest the possibility to extract and utilize the reflected USP sign...Show More
The electronic and optical properties of glass are rather sensitive to the variation of its atomic structure. The effect of intrinsic defects in amorphous structures of silica (a-SiO2) has shown to create electron trap level in the electronic band gap. The atomic structure of the amorphous material has been constructed from Rietveld Refinement. The study was carried out using plane-wave pseudo pot...Show More
A method to generate a continuous train of optical ultrashort pulses (USP) with sub-terahertz (sub-THz) repetition rate by utilizing the non-resonant Fabry-Pérot cavity (NRFPC) is explored. Analytical results reveal the possibility to generate widely tunable repetition rate USP signals via a tunable NRFPC from few tens of megahertz to sub-terahertz regime. The stable output repetition rate of the ...Show More
This paper presents investigation carried out on the properties of zinc oxide (ZnO) infrared light emitting diode (IR LED). Specifically, it focuses on dopant thickness variation in n and p layers. The IR LED structure is designed based on simple p-n junction theory. The p contact is deposited on the center top, and n contact is deposited at the edge of the IR LED. Thus, a current-voltage relation...Show More
This work is based on the development of LED using a circular chip of ZnSe. Proper analyses of the proposed LED are performed by adding optical transition and nonradiative recombination processes. The voltage applied to the ZnSe LED ranges from 0 V to 3.5 V. The current-voltage characteristic and the flow of current density are obtained. At 2.5 V, the carriers move towards n-contact hence reduces ...Show More
Barium Strontium Titanate (BST) is a polarizable ferroelectric material that has been used in various electronic applications. The structure of the ferroelectric grains can be reorientated by applying an external high voltage during baking or annealing process. Barium Strontium Titanate with a Ba:Sr ratio of 80:20 has been prepared using a sol-gel technique. A low baking temperature at 200°C has b...Show More
In this paper, a method is proposed to obtain a uniform illumination from multiple light sources using Zemax software. The angle of light distribution and light intensity of the Light Emitting Diode (LED) product are considered as important parameters to produce an appropriate design to be simulated by Zemax. The simulations demonstrate the relation between the reflector shape, angle of reflector ...Show More
Ferroelectric Ba0.7Sr0.3TiO3 thin films have been fabricated as MFIS and MFM configurations using sol-gel technique to study the possibility of using these films in FeFET applications. To ensure the quality of the films, the dielectric properties of the material within MFM structure have been investigated using an impedance analyzer which shows good quality for the films. The ferroelectric propert...Show More
The fabrication and characterization of static microfluidic transistors on ; p-silicon is demonstrated. A three photo mask level fabrication process, allows the construction of the microfluidic transistor with multiple channel widths which are 50μm, 100μm and 500μm. The basic device consists of two reservoirs connected via a channel which forms the basic fluidic circuit. Two doped regions wi...Show More
The effect of the film thickness of the ferroelectric barium strontium titanate thin films at the memory behavior of ferroelectric-gate field effect transistor (FeFET) has been studied. The films have been fabricated as metal-ferroelectric-insulator-semiconductor (MFIS) configuration using sol-gel technique. In order to investigate the memory window behavior, the C-V measurements have been carried...Show More
In this work, simulations were carried out for liquid flow in obstructed straight square micro channel. The simulation was done in consideration of pressure-driven flow technique under steady state types of simulation. An unsteady form of the Navier-stokes equations affiliate with no slip and free slip boundary conditions have been used to simulate flow of water through a micro channel. The invest...Show More
Micro fluid flow development with presence of roughness before and after flow development in straight square micro channels has been investigated computationally. Two micro channels were designed with different hydraulic diameters(5μm & 2μm) to investigate water flow development. Each micro channel were simulated using low and high Reynolds numbers (0.056 & 280) to observe discrepancies. These Rey...Show More
Fringe projection coupled with phase map generation has been used extensively for various applications namely in quality control sector of the industrial field. A phase map is generated from a multiple fringe projected images. Many algorithms have been generated for this purpose. Here a simple three step phase-shifting is used to project the fringes and finally from these images a saw tooth fringe...Show More
A high sensitivity pressure sensor design without a polymer transducer is demonstrated in this paper. The sensor uses a thin metal diaphragm as a pressure transducer instead of a polymer. The sensor is tested to a maximum pressure of 100 psi and has a sensitivity of 0.0115 nm/psi, which matches the calculated sensitivity of 0.0127 nm/psi. The sensor is provides accurate measurement of the pressure...Show More
Microfluidic devices, based on silicon, are fabricated by photolithography, wet chemical etching with focus on an liquid conduction channel n-channel depletion MOSFET and a silica-liquid dielectric capacitor. Masks for both devices were designed with AutoCAD and printed on transparencies. Fabrication on p- 4" Si wafers were executed and the devices were marginally characterized due to complic...Show More
A 980 nm forward pumped 16 m erbium-doped fibre gain-clamped amplifier in the C-band produced a gain of 26 dB and noise figure below 6 dB. Multiple fibre Bragg gratings are used in the active gain-bandwidth to effect the gain-clamping. The 0.5 dB gain compression points for two simultaneous input signal powers is -15 dBm.Show More
An erbium-doped (Er-doped) fiber amplifier operating in the C-band is gain clamped, at about 26 dB with noise figures below 6 dB by multiple fiber Bragg gratings. These gratings are placed at the amplifier output with center wavelengths in between communication channels so that unwanted amplified spontaneous emission is removed but put to good use. A 0.5-dB gain compression point at -15 dBm of inp...Show More
A gain-clamped long wavelength band erbium-doped fiber amplifier (L-band EDFA) with an improved gain characteristic is demonstrated by simply adding a broadband conventional band (C-band) fiber Bragg grating (FBG) in a two-stage amplifier system. The FBG reflects backward C-band amplified spontaneous emission (ASE) from the second stage back into the system to clamp the gain. The gain is clamped a...Show More
A new double-pass long wavelength band erbium-doped fiber amplifier with enhanced noise figure characteristics is demonstrated by adding a short length of forward pumped erbium-doped fiber (EDF) in front of a double-pass amplifier. Compared with the conventional double-pass amplifier, the new amplifier provides noise figure improvement of about 0.8 to 6.0 dB over the flat-gain region from 1568 to ...Show More
The erbium-doped fiber amplifier (EDFA) with regenerative feedback is compared with the cofeedback scheme. Without the bandpass filter, the injected signal experiences regenerative amplification and results in a higher signal gain. Such an above-threshold regenerative amplifier also exhibits a lower noise figure due to a higher inversion for the transition corresponding to the signal wavelength of...Show More
A gain-clamping technique for the long wavelength band (L-band) erbium-doped fiber amplifier (EDFA) is presented. It uses a single fiber Bragg grating (FBG) on the input side of erbium-doped fiber (EDF) to inject a portion of backward conventional band (C-band) amplified spontaneous emission (ASE) back into the system. The use of a narrow-band (NB) FBG has shown a better performance in clamped-gai...Show More
An improvement of gain in the long-wavelength band (L-band) is observed by double passing the forward amplified spontaneous emission and signal in the erbium-doped fiber (EDF) using a circulator, unlike conventional single pass amplification. A gain enhancement as high as 11 dB is obtained for a 1570-nm signal with an input power of -20 dBm at 98 mW of pump power. However, a noise figure penalty o...Show More
A unique laser filtering technique of a gain-clamped erbium-doped fiber amplifier based on ring-laser cavity is demonstrated. The filtering mechanism is achieved using a single fiber Bragg-grating, which also functions as a laser feedback reflector at the output end of the amplifier. This new design has low noise and most important, shows up to 98% reduction in output laser intensity as compared w...Show More
High average gains of greater than 31 dB have been obtained between 1530-1560 nm (conventional-wavelength band, C-band) and 1570-1600 nm (long-wavelength band, L-band) using a saturating tone technique that represents 64 channels of a wavelength division multiplexed system. A bidirectional amplifying stage is utilized as high-power C-band and low-noise L-band stages. Noise figures of less than 3.6...Show More
All optical gain-clamping in an erbium doped fiber amplifier (EDFA) is demonstrated. A double-pass superfluorescence laser is created by using a broadband fiber Bragg reflector centered at 1530 nm at the output of the EDFA, to lock the gain at 21 dB. Experiments on an eight-channel wavelength division multiplexing (WDM) system shows promise with gain variations between channels of less than 0.6 dB...Show More