Mikel Izal - IEEE Xplore Author Profile

Scheduled Maintenance on Monday 1/13/2025

Single article sales and account management will be unavailable from 5:00 AM - 7:00 PM ET (09:00 - 23:00 UTC). We apologize for the inconvenience.

IEEE.org
IEEE Xplore
IEEE SA
IEEE Spectrum
More Sites

- Donate
- Personal Sign In

Institutional Sign In

Institutional Sign In

ADVANCED SEARCH

Author details

Mikel Izal

Also published under: M. Izal

Publications

43

Citations

299

Publications by Year

19992024

Co-Authors:

U. AlonsoL. AracilJ. AracilJesus Arellano-UsonF. Astiz

Show All Co-Authors (44)

Mikel Izal

Also published under: M. Izal

Affiliation

Department of Electrical

Electronic and Communications Engineering

Public University of Navarre, Arrosadia Campus, Pamplona, Spain

Institute of Smart Cities, Pamplona, Spain

Publication Topics

Quality Of Experience,
Data Center,
Human-computer Interaction,
Interactive,
Local Area Network,
Mean Opinion Score,
Network Scenarios,
Packet Loss,
Round-trip Time,
Telework,
Accurate Measurement,
Active Users

Biography

Mikel Izal (Member, IEEE) received the M.Sc. and Ph.D. degrees in telecommunication engineering, in 1997 and 2002, respectively. In 2003, he was a Scientific Visitant with the Institute Eurecom, France, performing measures in network tomography and peer-to-peer systems. Since 2013, he has been with the Public University of Navarre, where he is currently an Associate Professor. His research interests include traffic analysis, network tomography, high-speed next generation networks, and peer-to-peer systems.(Based on document published on 1 March 2024).

Publications

43

Citations

299

Publications by Year

19992024

Co-Authors:

U. Alonso
L. Aracil
J. Aracil
Jesus Arellano-Uson
F. Astiz

Show All Co-Authors (44)

Author's Published Works

Search History

Showing 1-8 of 8 results

Conferences (4)

Journals (4)

Sort

Filter Results

Show

Open Access Only

Range
Single Year
T. Scott(8)
N.F. Haddad(4)
N. Haddad(3)
R. Brown(3)
J. Damato(2)
Loral Federal Systems, Manassas, VA, USA(3)
Lockheed Martin Federal Systems, Manassas, VA, USA(2)
Naval Research Laboratory, Inc., Washington D.C., DC, USA(2)
Innovative Systems and Technologies Corporation, Tampa, FL, USA(1)
Loral Federal Syst., Manassas, VA, USA(1)
IEEE Transactions on Nuclear Science(4)
1999 Fifth European Conference on Radiation and Its Effects on Components and Systems. RADECS 99 (Cat. No.99TH8471)(1)
1999 IEEE Aerospace Conference. Proceedings (Cat. No.99TH8403)(1)
Workshop Record 1992 IEEE Radiation Effects Data Workshop(1)
Workshop Record. 1994 IEEE Radiation Effects Data Workshop(1)
IEEE(8)
Fontevraud, France(1)
New Orleans, LA, USA(1)
Snowmass, CO, USA(1)
Tucson, AZ, USA(1)
Heavy Ions(5)
Circuit Elements(3)
Dose Rate(3)
Parasite(3)
Total Dose(3)

Select All on Page

Sort By

Results

Application of a pulsed laser for evaluation and optimization of SEU-hard designs [CMOS]

D. McMorrow;J.S. Melinger;S. Buchner;T. Scott;R.D. Brown;N.F. Haddad

IEEE Transactions on Nuclear Science

Year: 2000 | Volume: 47, Issue: 3 | Journal Article |

Cited by: Papers (127) | Patents (1)

Pulsed laser single-event upset tests are used to pinpoint and characterize sensitive nodes of circuits and to provide feedback relevant to the development and optimization of radiation-hard designs. The results presented reveal the advantages of incorporating laser evaluation at an early stage into programs described for the development of radiation-hardened parts. A quantitative correlation is o...Show More

Application of a pulsed laser for evaluation and optimization of SEU-hard designs [CMOS]

D. McMorrow;J.S. Melinger;S. Buchner;T. Scott;R.D. Brown;N.F. Haddad

IEEE Transactions on Nuclear Science

Year: 2000 | Volume: 47, Issue: 3 | Journal Article |

Radiation tolerant digital signal processor transformation

S. Sampson;S. Ramaswamy;C. Alcorn;N. Haddad;D. Lawson;T. Page;G. Scandalis;T. Scott;P. Robinson;D. Bain

1999 IEEE Aerospace Conference. Proceedings (Cat. No.99TH8403)

Year: 1999 | Conference Paper |

Cited by: Papers (1)

Under the sponsorship of the AFRL AISM program, LMFS teamed with ADI to successfully demonstrate the layout transfer, fabrication and verification of a commercial equivalent Analog Devices Signal Processor (ADSP) 21020 into LMFS's radiation hardened process. This report contains activities related to layout transfer, hardware fabrication, test, and electrical characterization. ADSP-21020 is a wide...Show More

Radiation tolerant digital signal processor transformation

S. Sampson;S. Ramaswamy;C. Alcorn;N. Haddad;D. Lawson;T. Page;G. Scandalis;T. Scott;P. Robinson;D. Bain

1999 IEEE Aerospace Conference. Proceedings (Cat. No.99TH8403)

Year: 1999 | Volume: 2 | Conference Paper |

Application of a pulsed laser for evaluation and optimization of SEU-hard designs

D. McMorrow;J.S. Melinger;S. Buchner;T. Scott;R.D. Brown;N.F. Haddad

1999 Fifth European Conference on Radiation and Its Effects on Components and Systems. RADECS 99 (Cat. No.99TH8471)

Year: 1999 | Conference Paper |

Cited by: Papers (12)

Pulsed laser single-event upset test are used to pinpoint and characterize sensitive nodes of circuits and to provide feedback relevant to the development and optimization of radiation-hard designs. The results presented reveal the advantages of incorporating laser evaluation at an early stage into programs designed for the development of radiation-hardened parts. A quantitative correlation is obs...Show More

Application of a pulsed laser for evaluation and optimization of SEU-hard designs

D. McMorrow;J.S. Melinger;S. Buchner;T. Scott;R.D. Brown;N.F. Haddad

1999 Fifth European Conference on Radiation and Its Effects on Components and Systems. RADECS 99 (Cat. No.99TH8471)

Year: 1999 | Conference Paper |

Current radiation issues for programmable elements and devices

R. Katz;J.J. Wang;R. Koga;K.A. LaBel;J. McCollum;R. Brown;R.A. Reed;B. Cronquist;S. Crain;T. Scott;W. Paolini;B. Sin

IEEE Transactions on Nuclear Science

Year: 1998 | Volume: 45, Issue: 6 | Journal Article |

Cited by: Papers (23)

State of the art programmable devices are utilizing advanced processing technologies, non-standard circuit structures, and unique electrical elements in commercial-off-the-shelf (COTS)-based, high-performance devices. This paper discusses that the above factors, coupled with the systems application environment, have a strong interplay that affect the radiation hardness of programmable devices and ...Show More

Current radiation issues for programmable elements and devices

R. Katz;J.J. Wang;R. Koga;K.A. LaBel;J. McCollum;R. Brown;R.A. Reed;B. Cronquist;S. Crain;T. Scott;W. Paolini;B. Sin

IEEE Transactions on Nuclear Science

Year: 1998 | Volume: 45, Issue: 6 | Journal Article |

SEU immunity: The effects of scaling on the peripheral circuits of SRAMs

I. Jacunski;S. Doyle;D. Jallice;N. Haddad;T. Scott

IEEE Transactions on Nuclear Science

Year: 1994 | Volume: 41, Issue: 6 | Journal Article |

Cited by: Papers (9) | Patents (1)

Heavy ion testing on a scaled 256 K SRAM has shown that SEU analysis of the peripheral circuits as well as the memory cell must be performed as circuits are scaled to smaller and smaller dimensions. This paper describes the SEU, induced phenomena experienced by the scaled version of a previous 256 K radiation hardened SRAM design, affected by circuits in the periphery.<>Show More

SEU immunity: The effects of scaling on the peripheral circuits of SRAMs

I. Jacunski;S. Doyle;D. Jallice;N. Haddad;T. Scott

IEEE Transactions on Nuclear Science

Year: 1994 | Volume: 41, Issue: 6 | Journal Article |

Fully-depleted submicron SOI for radiation hardened applications

F.T. Brady;T. Scott;R. Brown;J. Damato;N.F. Haddad

IEEE Transactions on Nuclear Science

Year: 1994 | Volume: 41, Issue: 6 | Journal Article |

Cited by: Papers (23)

Using fully-depleted technology, the Loral 256K SOI SRAM has demonstrated under worst case SEU and prompt dose testing an LET threshold of at least 80 MeV cm/sup /spl and/2//mg, and a prompt dose rate upset level of greater then 4E10 rad(Si)/s, respectively, without design hardening. Total dose testing on transistors fabricated on enhanced bond and etchback SOI substrates indicates over 100 krad(S...Show More

Fully-depleted submicron SOI for radiation hardened applications

F.T. Brady;T. Scott;R. Brown;J. Damato;N.F. Haddad

IEEE Transactions on Nuclear Science

Year: 1994 | Volume: 41, Issue: 6 | Journal Article |

Radiation hardened ULSI technology and design of 1M SRAM

N.F. Haddad;J.D. Maimon;S. Doyle;L. Jacunski;T. Hoang;D. Lawson;D. Jallice;T. Scott

Workshop Record. 1994 IEEE Radiation Effects Data Workshop

Year: 1994 | Conference Paper |

Cited by: Papers (10)

A radiation hardened 0.5 /spl mu/m Ultra Large Scale Integration (ULSI) technology was successfully developed to support the full scale production of a 1 Megabit Static Random Access Memory (1M SRAM). This ULSI technology represents the latest in a family of epitaxial bulk silicon CMOS used to produce 64 K SRAM, 256 K SRAM, an enhanced 256 K SRAM, and finally the 1M SRAM. A fast, electrically conf...Show More

Radiation hardened ULSI technology and design of 1M SRAM

N.F. Haddad;J.D. Maimon;S. Doyle;L. Jacunski;T. Hoang;D. Lawson;D. Jallice;T. Scott

Workshop Record. 1994 IEEE Radiation Effects Data Workshop

Year: 1994 | Conference Paper |

QML qualified 256 K radiation-hardened CMOS SRAM

R. Brown;J. Damato;N. Haddad;B. Posey;T. Scott;S. Murrill;J. Groseth;S. McGregor

Workshop Record 1992 IEEE Radiation Effects Data Workshop

Year: 1992 | Conference Paper |

Cited by: Papers (4)

The IBM 256 K SRAM is a high-performance, low-power device designed and fabricated in 0.8- mu m Enhanced Radiation-Hardened CMOS technology (RHCMOS-E). It is organized in a 32 K*8 or 256 K*1 configuration and is available with either CMOS or TTL input receivers. The device was developed to satisfy future space application requirements. Radiation testing indicates that the device meets or exceeds a...Show More

QML qualified 256 K radiation-hardened CMOS SRAM

R. Brown;J. Damato;N. Haddad;B. Posey;T. Scott;S. Murrill;J. Groseth;S. McGregor

Workshop Record 1992 IEEE Radiation Effects Data Workshop

Year: 1992 | Conference Paper |

IEEE Personal Account

Change username/password

Purchase Details

Payment Options
View Purchased Documents

Profile Information

Communications Preferences
Profession and Education
Technical interests

Need Help?

US & Canada: +1 800 678 4333
Worldwide: +1 732 981 0060
Contact & Support

Follow

About IEEE Xplore | Contact Us | Help | Accessibility | Terms of Use | Nondiscrimination Policy | IEEE Ethics Reporting | Sitemap | IEEE Privacy Policy

A public charity, IEEE is the world's largest technical professional organization dedicated to advancing technology for the benefit of humanity.

© Copyright 2025 IEEE - All rights reserved, including rights for text and data mining and training of artificial intelligence and similar technologies.

IEEE Account

Change Username/Password
Update Address

Purchase Details

Payment Options
Order History
View Purchased Documents

Profile Information

Communications Preferences
Profession and Education
Technical Interests

Need Help?

US & Canada: +1 800 678 4333
Worldwide: +1 732 981 0060
Contact & Support

About IEEE Xplore
Contact Us
Help
Accessibility
Terms of Use
Nondiscrimination Policy
Sitemap
Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest technical professional organization dedicated to advancing technology for the benefit of humanity.
© Copyright 2025 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.

Test Whats new message.