More defects at the \text{SiC}/\text{SiO}_{2} interface of SiC MOSFETs cause the decrease in the static parameters to be particularly significant when the SiC MOSFETs gate oxide is subjected to a certain extent of stress. In this paper, the variation in the static characteristics of SiC MOSFETs with total ionizing dose (TID) irradiation and dynamic gate stress is fully studied. After TID irradia...Show More
In the past few years, liquid-gated graphene field-effect transistors (LG-GFETs) have been widely used in biological detection due to their unique advantages. An accurate transistor model is the basis of biological detection circuit design, however, the reported GFET models are mainly focusing on solid-gated GFETs. Therefore, it is essential to conduct the research on LG-GFET model. In this articl...Show More
