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Optimization of the electrical conductivity and thermal coefficient of temperature (TCR) on hydrogenated amorphous silicon-germanium films doped with nitrogen (a-SiGe:H,N) for applications on high performance infrared detectors
Oscar Velandia;Mario Moreno;Ricardo Zavala;Alfredo Morales;Alfonso Torres;Luis Hernández
2023 IEEE Latin American Electron Devices Conference (LAEDC)
Year: 2023 | Conference Paper |
Uncooled microbolometers are infrared detectors used for imaging applications in the long-wave IR spectra, made of semiconductor materials, such as vanadium oxide (VOx), boron doped amorphous silicon (a-Si:H,B) or amorphous silicon germanium (a-SiGe:H), the last two are usually deposited by plasma-enhanced chemical vapor deposition (PECVD). When infrared radiation falls on the thermos-sensor films...Show More
Optimization of the electrical conductivity and thermal coefficient of temperature (TCR) on hydrogenated amorphous silicon-germanium films doped with nitrogen (a-SiGe:H,N) for applications on high performance infrared detectors
Oscar Velandia;Mario Moreno;Ricardo Zavala;Alfredo Morales;Alfonso Torres;Luis Hernández
Year: 2023 | Conference Paper |
Hydrogenated amorphous silicon germanium films doped with nitrogen (a-SiGe:H,N) to improve the long-wave infrared (LWIR) region absorption
Oscar Velandia;Mario Moreno;Ricardo Zavala;Alfredo Morales;Alfonso Torres;Carlos Zuñiga;Pedro Rosales;Luis Hernández;Netzahualcoyotl Carlos
2022 IEEE Latin American Electron Devices Conference (LAEDC)
Year: 2022 | Conference Paper |
Sensors in the long-wave IR region are used due to their enormous importance in technology for a variety of applications, as medical diagnostics, fire protection, automotive night vision, security and military, among others. This paper reports our study of hydrogenated amorphous silicon-germanium (a-SiGe:H) thin films deposited by low-frequency plasma-enhanced chemical vapor deposition (LF-PECVD),...Show More
Hydrogenated amorphous silicon germanium films doped with nitrogen (a-SiGe:H,N) to improve the long-wave infrared (LWIR) region absorption
Oscar Velandia;Mario Moreno;Ricardo Zavala;Alfredo Morales;Alfonso Torres;Carlos Zuñiga;Pedro Rosales;Luis Hernández;Netzahualcoyotl Carlos
Year: 2022 | Conference Paper |
CMOS current-mode PWL implementation using MAX and MIN operators
O. J. Cinco-Izquierdo;M. T. Sanz-Pascual;L. Hernández;C. A. de la Cruz-Blas
2017 IEEE International Symposium on Circuits and Systems (ISCAS)
Year: 2017 | Conference Paper |
In this manuscript a novel current-mode technique to implement generic Piecewise-Linear (PWL) functions is presented. The main characteristic of the proposed circuits is that errors are not accumulated by adding linear segments; instead they are local, providing more robust designs. The proposed circuits are designed in a standard 0.18μm CMOS process with 1.8V power supply. Their operation is base...Show More
Seating fabrication system for clinical rehabilitation settings in low income countries: The experience of Mexico and Colombia
Jorge Letechipia;Abel Arredondo;Luis Hernández;Aldo Alessi;Andrés Torres;Robinson A. Torres;Yeison J Montagut
IEEE Global Humanitarian Technology Conference (GHTC 2014)
Year: 2014 | Conference Paper |
Cited by: Papers (2)
The benefits experienced by assistive technology (AT) users include increased independence and comfort, however, only a small percentage of the world population with a disability has access to AT. In low income countries AT is rarely available. Sustainable methods for designing, producing and distributing AT within these are required. This paper describes the design and implementation of a seating...Show More
Prospects for MEMS on high-index silicon combining bulk micromachining and PolyMEMS INAOE technology
H. E. Martínez-Mateo;F. J. De la Hidalga-W;A. Torres;C. Zúñiga;M. Linares;J. Molina;M. Moreno;P. Rosales;C. Reyes;L. Hernández;L. Niño de Rivera;W. Calleja
2012 Argentine School of Micro-Nanoelectronics, Technology and Applications (EAMTA)
Year: 2012 | Conference Paper |
High-index silicon substrates are proposed as an alternative for the development of a new type of microsystems. Both bulk and surface micromachining techniques could be developed in combination with MOS circuits, offering new possibilities of applications, based on a combined intra- and post-processing approach without affecting the interface atomic texture of high-index substrates. As an example ...Show More
1.5-V square-root domain first-order filter with multiple operating points
C.A. De La Cruz-Blas;A. Lopez-Martin;A. Carlosena;L. Hernandez;A. Sarmiento
2006 IEEE International Symposium on Circuits and Systems (ISCAS)
Year: 2006 | Conference Paper |
A 1.5-V square-root domain (SRD) first-order filter possessing multiple operating points is presented. The basic building blocks of the filter are based on MOS translinear loops and dynamic level shifter techniques, allowing low voltage operation and an extended dynamic range. However the dynamic level shifters introduce positive feedback inducing three operating points to the filter through a neg...Show More
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