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Online Health Monitoring and Aging Prognostics for SiC Power Converters
2020 IEEE Energy Conversion Congress and Exposition (ECCE)
Year: 2020 | Conference Paper |
Cited by: Papers (2)
The 650 V and 1200 V SiC MOSFETs have gained significant market acceptance in the recent years, mainly, due to the promise of higher power conversion efficiency and power density. However, the lack of field-proven long-term reliability data of SiC MOSFETs is still a major concern, particularly in applications where the devices are exposed to harsh thermal and electrical cycles. This paper discusse...Show More
A Reliable Ultrafast Short-Circuit Protection Method for E-Mode GaN HEMT
Xintong Lyu;He Li;Yousef Abdullah;Ke Wang;Boxue Hu;Zhi Yang;Jiawei Liu;Jin Wang;Liming Liu;Sandeep Bala
A unique three-step short-circuit protection method is proposed for the 650-V enhancement mode (E-mode) gallium nitride high-electron mobility transistor (GaN HEMT). This method can quickly detect the short-circuit event, reduce gate voltage to enhance the device short-circuit capability, and turn off the device under fault after confirmation. Experimental results prove that with this method, the ...Show More
A Consensus-Based Algorithm for Power Sharing and Voltage Regulation in DC Microgrids
Bo Fan;Shilin Guo;Jiangkai Peng;Qinmin Yang;Wenxin Liu;Liming Liu
In dc microgrids, load power sharing and bus voltage regulation are two common control objectives. In this article, a consensus-based algorithm is presented to achieve proportional power sharing and regulation of weighted geometric mean of bus voltages in dc microgrids with ZIP (constant impedance, constant current, and constant power) loads simultaneously. By using the virtue of the Laplacian mat...Show More
A Reliable Short-Circuit Protection Method with Ultra-Fast Detection for GaN based Gate Injection Transistors
Ke Wang;Yousef M. Abdullah;Xiao Li;Diang Xing;Jin Wang;Liming Liu;Sandeep Bala
2019 IEEE 7th Workshop on Wide Bandgap Power Devices and Applications (WiPDA)
Year: 2019 | Conference Paper |
Cited by: Papers (10)
This paper presents a new short-circuit protection method developed for Gallium Nitride (GaN) gate injection transistors (GITs). The proposed protection method is based on ultra-fast detection of the voltage dip on the phase leg of the converter, active current clamping of the gate drive, and fault confirmation with a low pass filter based de-saturation fault detection. Thus, it achieves an ultra-...Show More
High Temperature Design of a GaN Based Modular Integrated Drive with Natural Cooling Using Metal Clad PCBs
Yousef Abdullah;Xiao Li;Ke Wang;Jin Wang;Liming Liu;Sandeep Bala
2019 IEEE Energy Conversion Congress and Exposition (ECCE)
Year: 2019 | Conference Paper |
Cited by: Papers (6)
This paper proposes a high temperature design of an integrated three phase inverter using direct drive GaN HEMT devices and metal clad PCBs (MCPCB). The inverter features a modular design approach, utilizing a 600 V direct drive GaN device with integrated overcurrent and overtemperature protection. Aluminum based PCBs with high thermal conductivity are also used to achieve a natural cooling soluti...Show More
A DC-Link Capacitor Voltage Balancer Integrated into LLC-based Auxiliary Power Supply
Yuxiang Shi;Yu Du;Zach Pan;Eddy Aeloiza;Arun K. Kadavelugu;Liming Liu
2019 IEEE Applied Power Electronics Conference and Exposition (APEC)
Year: 2019 | Conference Paper |
Cited by: Papers (1)
Capacitor voltage balancing circuits are required for applications using series capacitor to provide high dc-link voltage. This paper propose a new dc-link capacitor voltage balancer integrated into the LLC auxiliary power supply. Only small balancing inductors are added which are connected between the middle points of adjacent capacitors and half-bridge legs in the LLC auxiliary converter. Taking...Show More
A Reliable Ultra-Fast Three Step Short Circuit Protection Method for E-mode GaN HEMTs
Xintong Lyu;He Li;Yousef Abdullah;Ke Wang;Boxue Hu;Zhi Yang;Jin Wang;Liming Liu;Sandeep Bala
2019 IEEE Applied Power Electronics Conference and Exposition (APEC)
Year: 2019 | Conference Paper |
Cited by: Papers (9)
The Enhancement-mode (E-mode) Gallium Nitride High-Electron Mobility Transistor (GaN HEMT) has several hundred nanosecond level short circuit withstand time, much shorter than that of the silicon (Si) devices. Reliable ultra-fast protection solutions for the GaN HEMTs are in great demand. In this paper, a three-step GaN HEMT short circuit protection solution is proposed, including ultra-fast detec...Show More
A Hybrid PWM Modulation for EMI Filter Size Reduction in a 10 kW GaN-Based Three Phase Inverter
Yousef Abdullah;Will Perdikakis;He Li;Ke Wang;Yue Zhang;Xiaodan Wang;Jin Wang;Liming Liu;Sandeep Bala
2019 IEEE Applied Power Electronics Conference and Exposition (APEC)
Year: 2019 | Conference Paper |
Cited by: Papers (8)
In this paper, a hybrid PWM modulation method is proposed to reduce the EMI filter size of GaN based inverters. Time-based PWM modulation and frequency-based modulation methods are combined to achieve a reduced EMI profile, which reduces the filter size required to meet EMI standards. An EMI test bed based on the CISPR EMI standard is built using a 10-kW GaN inverter and modeled using LTspice simu...Show More
Wide Bandgap Devices in AC Electric Drives: Opportunities and Challenges
Ajay Kumar Morya;Matthew C. Gardner;Bahareh Anvari;Liming Liu;Alejandro G. Yepes;Jesús Doval-Gandoy;Hamid A. Toliyat
Wide bandgap (WBG) device-based power electronics converters are more efficient and lightweight than silicon-based converters. WBG devices are an enabling technology for many motor drive applications and new classes of compact and efficient motors. This paper reviews the potential applications and advances enabled by WBG devices in ac motor drives. Industrial motor drive products using WBG devices...Show More
Robustness of 650-V Enhancement-Mode GaN HEMTs Under Various Short-Circuit Conditions
He Li;Xiao Li;Xiaodan Wang;Xintong Lyu;Haiwei Cai;Yazan M. Alsmadi;Liming Liu;Sandeep Bala;Jin Wang
This paper presents the short-circuit behavior and degradation of 650-V/60-A enhancement-mode Gallium nitride (GaN) high electron mobility transistors (HEMTs) under various test conditions. First, this paper introduces the basic information of device, test method, and platform. Subsequently, single pulse, 10-μs short-circuit tests are performed from 50 to 400 V to extract the typical behavior of d...Show More
An Ultra-Fast Short Circuit Protection Solution for E-mode GaN HEMTs
He Li;Xintong Lyu;Ke Wang;Yousef Abdullah;Boxue Hu;Zhi Yang;Jin Wang;Liming Liu;Sandeep Bala
2018 1st Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia)
Year: 2018 | Conference Paper |
Cited by: Papers (14)
The Enhancement-mode (E-mode) Gallium Nitride High-Electron Mobility Transistor (GaN HEMT) has proven excellent electrical performance in various applications. Meantime, multiple comprehensive studies on the short circuit behavior show that GaN HEMTs has much shorter short circuit withstand time compared to conventional silicon (Si) devices. In this paper, the GaN HEMT short circuit capability is ...Show More
Grid-Interactive Dual-Paralleled Buck/Boost Converter
IECON 2018 - 44th Annual Conference of the IEEE Industrial Electronics Society
Year: 2018 | Conference Paper |
This paper presents a grid-interactive dual-paralleled buck/boost converter with four-quadrant power flow capability. The primary advantage of this topology compared to the traditional H-bridge inverter is its inherent robustness against shoot-through problems. Further, by combining the use of traditional Si devices with wide bandgap devices, one can get reduced power loss and higher power density...Show More
Power Converters Based Advanced Experimental Platform for Integrated Study of Power and Controls
Wenxin Liu;Jang-Mok Kim;Cheng Wang;Won-Sang Im;Liming Liu;Hao Xu
With increasing interest in smart grid and renewable energy, significant investments have been allocated to promote related studies. Since there is a wide spectrum of topics to study, it is necessary to have an advanced experimental platform that can accommodate both system- and component-level studies, both hardware and algorithm designs, and both teaching and research. Unfortunately, such experi...Show More
Hybrid active power filter with GaN power stage for 5kW single phase inverter
Ruben Otero-De-Leon;Liming Liu;Sandeep Bala;Giovanni Manchia
2018 IEEE Applied Power Electronics Conference and Exposition (APEC)
Year: 2018 | Conference Paper |
Cited by: Papers (2)
This paper presents a hybrid active power filter (APF) with DrGaNplus module for a 5kW single phase inverter. Considering the low voltage stress on the devices in hybrid APF, a module integrated with gate driver is selected to achieve high power density and high efficiency for the overall system. An effective control is proposed to keep the APF capacitor from depleting, while at the same time mana...Show More
A simple calorimetric technique for high-efficiency GaN inverter transistor loss measurement
He Li;Xiao Li;Zhangda Zhang;Jin Wang;Liming Liu;Sandeep Bala
2017 IEEE 5th Workshop on Wide Bandgap Power Devices and Applications (WiPDA)
Year: 2017 | Conference Paper |
Cited by: Papers (9)
With the rapid development of the wide bandgap (WBG) power transistor technology, the latest Silicon-Carbide and Gallium-Nitride (SiC and GaN) based power transistors can be used as the main switches in the medium power (≥10 kW) conversion systems. Electrical signal based efficiency measurement could be very challenging due to the high-frequency output signals and the high power to loss ratio. In ...Show More
Hybrid single-phase multilevel inverter with DC bypass
2017 IEEE Energy Conversion Congress and Exposition (ECCE)
Year: 2017 | Conference Paper |
Cited by: Papers (1)
This paper presents a hybrid multilevel inverter with DC bypass. Mixed modulation method is proposed to balance dc voltage, and enables Si devices & wide bandgap devices integration to reduce power loss and achieve high power density. Simulation results are firstly provided to verify the validity of the proposed approach.Show More
Power loss evaluation for active and magnetic components in a SiC MOSFET-based power electronic system
Yi Deng;Zach Pan;Harish Suryanarayana;Arun Kadavelugu;Liming Liu;Christopher Belcastro;Esa-Kai Paatero
2017 IEEE Energy Conversion Congress and Exposition (ECCE)
Year: 2017 | Conference Paper |
Cited by: Papers (3)
This paper introduces a general method to evaluate the power losses of active (power semiconductors) and magnetic (inductors) components in power electronic systems. The bidirectional current conduction of silicon-carbide MOSFETs is analyzed to more accurately estimate the conduction and switching losses. Compared to conventional methods, the core loss of the magnetic components is estimated in a ...Show More
E-mode GaN HEMT short circuit robustness and degradation
He Li;Xiao Li;Xiaodan Wang;Jin Wang;Yazan Alsmadi;Liming Liu;Sandeep Bala
2017 IEEE Energy Conversion Congress and Exposition (ECCE)
Year: 2017 | Conference Paper |
The emerging 650 V large current rating, Enhancement-mode (E-mode) Gallium Nitride High-Electron-Mobility Transistor (GaN HEMT) is a promising device for low to medium power, high power density converters (e.g., motor drives, battery chargers), which require high robustness levels. Thus, a comprehensive study of the short circuit behavior of high power E-mode GaN HEMT is the subject of this paper....Show More
Mixed single-phase three-level NPC inverter with hybrid modulation technology
2017 IEEE Energy Conversion Congress and Exposition (ECCE)
Year: 2017 | Conference Paper |
Cited by: Papers (1)
This paper presents a mixed three-level neutral point clamped (NPC) inverter with hybrid modulation method. It enables traditional Si devices and wide bandgap devices integration to reduce power loss and achieve high power density. Simulation results are firstly provided to verify the validity of the proposed approach.Show More
Isolated AC–DC Converter Using Medium Frequency Transformer for Off-Shore Wind Turbine DC Collection Grid
Harish Krishnamoorthy;Michael Daniel;Jorge Ramos-Ruiz;Prasad Enjeti;Liming Liu;Eddy Aeloiza
This paper investigates a dc collection grid architecture to process energy from offshore wind turbine generators (WTGs), which can be further interfaced with the shore via a high-voltage dc network. In the proposed approach, WTG output voltage is rectified and converted to medium frequency (MF). Then, a transformer isolation stage is used, followed by a boost rectification stage. The boost rectif...Show More
Design of a 10 kW GaN-based high power density three-phase inverter
He Li;Xuan Zhang;Zhengda Zhang;Chengcheng Yao;Feng Qi;Boxue Hu;Jin Wang;Liming Liu
2016 IEEE Energy Conversion Congress and Exposition (ECCE)
Year: 2016 | Conference Paper |
Cited by: Papers (44)
The medium power rating two-level three phase voltage source inverter is among the most popular power conversion systems. The typical switching frequency of the commercial medium power rating inverter, however, is limited to tens of kHz. By increasing the switching frequency and using emerging gallium-nitride devices, the size of the overall system can be greatly reduced. This paper begins by revi...Show More
Evaluation of high voltage cascode GaN HEMTs in parallel operation
He Li;Xuan Zhang;Lucheng Wen;John Alex Brothers;Chengcheng Yao;Ke Zhu;Jin Wang;Liming Liu;Jing Xu;Joonas Puukko
2016 IEEE Applied Power Electronics Conference and Exposition (APEC)
Year: 2016 | Conference Paper |
Cited by: Papers (17)
Paralleling devices is an effective way to achieve higher power applications while still having the convenience brought by discrete devices. However, very few papers investigate the challenges of paralleling Gallium Nitride high electron mobility transistors (GaN HEMTs) in cascode configuration, especially the potential failure modes and its related mechanisms. In this paper, a comprehensive study...Show More
Paralleled Operation of High-Voltage Cascode GaN HEMTs
He Li;Xuan Zhang;Lucheng Wen;John Alex Brothers;Chengcheng Yao;Chaoran Han;Liming Liu;Jing Xu;Joonas Puukko;Jin Wang
Paralleling devices is an effective way to achieve a higher power application while still having the convenience of using discrete devices. However, the mechanisms of potential failures and the circuit design considerations have not been thoroughly studied yet, when paralleling gallium nitride high-electron-mobility transistors (GaN HEMTs) in cascode configuration. This paper presents a comprehens...Show More
Cooperative Controls for Pulsed Power Load Accommodation in a Shipboard Power System
To isolate the negative impacts of pulsed power loads (PPL) in a shipboard power system (SPS), energy storage systems (ESS) are usually equipped for online ESS charging and offline ESS discharging for PPL deployment. In order to achieve fast and smooth ESS charging, the generation control and ESS charging control need to be well coordinated. In addition, control constraints, such as generation and...Show More
A novel modulation method applied in quasi-Z-source based cascaded pv system suffering module mismatch
IECON 2015 - 41st Annual Conference of the IEEE Industrial Electronics Society
Year: 2015 | Conference Paper |
Cited by: Papers (5)
Quasi-Z-source based modular cascaded multilevel converter featuring both the advantages of multilevel converter like modularity, scalability, distributed maximum power point tracking (MPPT) capability and the advantages of quasi-Z-source network (qZSN) like high efficiency, no consideration for annoying switching dead-zone, wide dc voltage boosting range etc. is a promising option for high power ...Show More
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