We study doping and metallization of black silicon (bSi) boron emitters formed by ion implantation or diffusion. We demonstrate that conformal metal layers can be deposited on bSi by electron beam evaporation. Raman spectroscopy shows that high boron concentrations (4·1019 cm-3) are obtained in bSi by ion implantation, while maintaining emitter saturation current (J0e) below 20 fA/cm2 with Al2O3 p...Show More
