Andreas Fiedler - IEEE Xplore Author Profile
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Andreas Fiedler

Publications
2
Citations
487
Publications by Year
20162019
Co-Authors:
Show All Co-Authors (17)
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Andreas Fiedler

Affiliation

Leibniz-Institut für Kristallzüchtung, Germany

Publication Topics

Publications
2
Citations
487
Publications by Year
20162019
Co-Authors:
Show All Co-Authors (17)
Author's Published Works

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Impact of Substrate Miscut Angle on Surface Morphology and Electrical Properties of Homoepitaxial $\pmb{\beta}$ -Ga2O3 Grown by MOVPE

Saud Bin Anooz;Andreas Popp;Raimund Grüneberg;Andreas Fiedler;Klaus Irmscher;Robert Schewski;Martin Albrecht;Zbigniew Galazka;Günter Wagner

2019 Compound Semiconductor Week (CSW)
Year: 2019 | Conference Paper |
The influence of substrate miscut on the surface morphology and Hall mobility at optimized growth conditions of $\beta$-Ga2O3 layers was investigated. The results demonstrate that the surface morphology and the Hall mobility are impacted by the miscut angle of $\beta$-Ga2O3 substrates. For substrates with miscut angle of 6° and a growth rate of about 4 nm/min, a morphology with step bunches was ob...Show More

Impact of Substrate Miscut Angle on Surface Morphology and Electrical Properties of Homoepitaxial $\pmb{\beta}$ -Ga2O3 Grown by MOVPE

Saud Bin Anooz;Andreas Popp;Raimund Grüneberg;Andreas Fiedler;Klaus Irmscher;Robert Schewski;Martin Albrecht;Zbigniew Galazka;Günter Wagner

Year: 2019 | Conference Paper |

3.8-MV/cm Breakdown Strength of MOVPE-Grown Sn-Doped $\beta $ -Ga2O3 MOSFETs

Andrew J. Green;Kelson D. Chabak;Eric R. Heller;Robert C. Fitch;Michele Baldini;Andreas Fiedler;Klaus Irmscher;Günter Wagner;Zbigniew Galazka;Stephen E. Tetlak;Antonio Crespo;Kevin Leedy;Gregg H. Jessen

IEEE Electron Device Letters
Year: 2016 | Volume: 37, Issue: 7 | Journal Article |
Cited by: Papers (487)
A Sn-doped (100) $\beta $ -Ga2O3 epitaxial layer was grown via metal–organic vapor phase epitaxy onto a single-crystal, Mg-doped semi-insulating (100) $\beta $ -Ga2O3 substrate. Ga2O3-based metal–oxide–semiconductor field-effect transistors with a 2- $\mu \text{m}$ gate length ( $L_{G})$ , 3.4- $\mu \text{m}$ source–drain spacing ( $L_{\textrm {SD}})$ , and 0.6- $\mu \text{m}$ gate–drain spac...Show More

3.8-MV/cm Breakdown Strength of MOVPE-Grown Sn-Doped $\beta $ -Ga2O3 MOSFETs

Andrew J. Green;Kelson D. Chabak;Eric R. Heller;Robert C. Fitch;Michele Baldini;Andreas Fiedler;Klaus Irmscher;Günter Wagner;Zbigniew Galazka;Stephen E. Tetlak;Antonio Crespo;Kevin Leedy;Gregg H. Jessen

Year: 2016 | Volume: 37, Issue: 7 | Journal Article |

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