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100V GaN for Highly Efficient 1kW Motor Drive Applications
Asantha Kempitiya;Hrach Amirkhanian;Srikanth Yerra;Kapil Kelkar
2022 IEEE 9th Workshop on Wide Bandgap Power Devices & Applications (WiPDA)
Year: 2022 | Conference Paper |
In this work, Infineon’s 100V 3mΩ CoolGaN™ is evaluated and compared with a 100V similar Rdson MOSFET using OptiMOS™5 silicon technology in a three-phase inverter for battery powered motor drive applications. In order to minimize conduction losses, 30ns dead time is achieved for GaN due to its lower gate and output charge in comparison to 60ns of dead time for silicon. A motor-generator setup is d...Show More
ON-State Characteristics of a High-Power Photoconductive Switch Fabricated From Compensated 6-H Silicon Carbide
Kapil S. Kelkar;Naz E. Islam;Phumin Kirawanich;Christopher M. Fessler;William C. Nunnally
The ON-state characteristics of a 6-H silicon carbide (SiC) photoconductive switch with vertical geometry, transverse illumination, and linear-mode operation are presented. The switch is triggered by an optical source with a photon energy that is less than the bandgap energy of SiC. Following low-power matching characteristics, the analysis of a design incorporating and layers next to the cathode ...Show More
Investigation of high electric fields at the electrode-SiC interface in photo-switches
2007 16th IEEE International Pulsed Power Conference
Year: 2007 | Conference Paper |
Cited by: Papers (2)
Photoconductive semiconductor switches (PCSSs) have also been used for sometime in systems for generating high power microwaves. As a switch material, SiC offers certain advantage over Si and GaAs, the other known PCSS materials [1] [2]. In the existing SiC photo-switch, however, electric field blocking performance is mainly limited by the switch packaging. No packaging method exists to effectivel...Show More
Investigation of High Electric Fields at the Electrode-SiC Interface in Photo-Switches
2007 IEEE 34th International Conference on Plasma Science (ICOPS)
Year: 2007 | Conference Paper |
Cited by: Papers (2)
Summary form only given. Besides other applications, photoconductive semiconductor switches (PCSSs) have also been used in systems for generating high power microwaves. As a switch material, SiC offers certain advantage over Si and GaAs, the other two known PCSS materials. In the existing SiC photo-switch, however, electric field hold-off performance is mainly limited by the switch packaging. No p...Show More
Effects of Field-Dependent Trapping and Detrapping on the Responses of Compensated GaAs Photoconductive Switches
Kapil Kelkar;Naz E. Islam;Phumin Kirawanich;Christopher M. Fessler;William C. Nunnally;William T. Kemp;Ashwani K. Sharma
In this paper, the response of a semi-insulating gallium arsenide photoconductive switch used in high-power microwave generation has been analyzed through experiment and simulation. The switch characteristics as a result of trapping and detrapping phenomena during a transient are studied. Analysis show that field-enhanced capture at high field locations during the onstate creates a temporary reser...Show More
Investigation of Optically Initiated Avalanche Silicon Carbide High Power Switches
Conference Record of the 2006 Twenty-Seventh International Power Modulator Symposium
Year: 2006 | Conference Paper |
Cited by: Papers (1)
The non-linear, optically initiated closure of semi- insulating Gallium Arsenide (GaAs) high voltage switches results in filamentary conduction. The conduction current magnitude and the conduction current pulse length are limited by the damage of the switch electrodes and bulk GaAs material. Heavily doped regions under the Ohmic contact have been investigated for the purpose of spreading the curre...Show More
Radio-Frequency Heating of GaAs and SiC Photoconductive Switch for High-Power Applications
R. Gunda;D.S. Gleason;K. Kelkar;P. Kirawanich;W.C. Nunnally;N.E. Islam
The response of a nonlinear opposed contact GaAs photoconductive switch, which is used in high-power microwave generation, was studied for high-power radio-frequency heating effects and compared with a linear-mode SiC switch. Current-controlled negative resistivity behavior was observed at elevated temperature in both cases. Better thermal conductivity and the absence of a heat sink result in a fa...Show More
Investigation of linear, extrinsic silicon carbide photo-conductive switch materials
The 33rd IEEE International Conference on Plasma Science, 2006. ICOPS 2006. IEEE Conference Record - Abstracts.
Year: 2006 | Conference Paper |
Summary form only given. Semi-insulating, compensated silicon carbide (SiC) has been employed in the linear, extrinsic photo-conductive mode as a high power switch. The extrinsic mode is employed for the purpose of increasing the optical absorption depth and thus the area through current can flow. Thus, the dopant densities determine the maximum carrier density and thus the current density is limi...Show More
High resistivity SiC has been shown to be a viable PCSS material [1]. High breakdown field, extreme thermal stability, wide energy band-gap, crystal robustness, and large electron saturation velocity are likely to make devices made from SiC more reliable under extreme operating conditions [2]. Because of its limited use this far, there is a need to study and characterize a SiC PCSS as a viable com...Show More
Compact silicon carbide photoconductive switch for high power applications: experiments and simulation
Conference Record of the Twenty-Sixth International Power Modulator Symposium, 2004 and 2004 High-Voltage Workshop.
Year: 2004 | Conference Paper |
Cited by: Papers (1)
A novel SiC photoconductive switch designed and packaged for optimal performance under hostile operating conditions is presented. The use of semiinsulating SiC material with inherent defects (trap) sites and triggered by optical energy to be used as a high-power switch for compact pulsed power applications is discussed. The switching operations differs from previous attempts in that the optical so...Show More
Semiconductor modeling for multi-layer, high field, photo-switch using sub-bandgap photons
Digest of Technical Papers. PPC-2003. 14th IEEE International Pulsed Power Conference (IEEE Cat. No.03CH37472)
Year: 2003 | Conference Paper |
Cited by: Papers (3)
High electric field geometries for high power, photo-conductive switches made possible by employing sub-bandgap photons and inter-bandgap dopants / defects are being investigated for compact pulse power systems. The high field, long absorption depth package reduces the required linear mode, optical closure energy and also reduces the conduction current density through the active material and at th...Show More
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