The high-temperature pressure sensors have wide applications in aerospace, petroleum, geothermal exploration, automotive electronics, and other fields. However, the traditional silicon-based pressure sensors are restricted to pressure measurement under 120~^{\circ }\text{C} and cannot be satisfied to measure the pressure of various gases or liquids in high temperature and other harsh environme...Show More
In this paper, we report a modified three step anisotropic wet etching (TSWE) method to fabricate solid-state silicon nanoslits. The slit-opening process is performed by crystal plane etching. The etching rate of the crystal plane is reasonably slow as it is only 1/45 of the etching rate, thus allowing and therefore good slits-opening controllability. By slowly etching the ...Show More
In this paper we report firstly the realization of nanoslits with feature sizes down to sub-4 nm in single-crystal silicon substrate at chip scale. Three-step anisotropic wet etching (TSWE) method was used in the fabrication process and a low-noise current feedback experimental set-up was developed to monitor the slit-opening event in the last step. Individual nanoslit with 3.8 nm width and 3.88 μ...Show More
