Huang Jian - IEEE Xplore Author Profile

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Author details

Huang Jian

Publications

16

Citations

22

Publications by Year

19972015

Co-Authors:

Cai YingChen GuoqingChen LianghongChen SiningChen Yiyan

Show All Co-Authors (35)

Huang Jian

Affiliation

College of Mechatronic Engineering and Automation

National University of Defense Technology

Changsha, P.R. China

Publication Topics

Amount Of Tasks,
Arrival Time,
Atomic Components,
Atomistic Description,
Average Degree,
Average Path Length,
Capacitor Current,
Clustering Coefficient,
Code Execution,
Contact Resistance,
Continuous Wave,
Correct Rate

Biography

Huang Jian was born in Linshui, Sichuan province, in 1971. He is now a senior engineer. His research concerns millimetre technique. Email: huangjianswiet.com.cn. Phone: 028–87555391, Fax: 028–87538378.(Based on document published on 1 March 2012).

Publications

16

Citations

22

Publications by Year

19972015

Co-Authors:

Cai Ying
Chen Guoqing
Chen Lianghong
Chen Sining
Chen Yiyan

Show All Co-Authors (35)

Author's Published Works

Search History

Showing 1-25 of 29 results

Conferences (18)

Journals (9)

Early Access Articles (2)

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Kaifeng Wang(29)
Qianqian Huang(27)
Ru Huang(26)
Zhiyuan Fu(16)
Chang Su(11)
School of Integrated Circuits, Peking University, Beijing, China(21)
Beijing Advanced Innovation Center for Integrated Circuits, Beijing, China(19)
School of Electronic and Computer Engineering, Peking University, Shenzhen, China(8)
Chinese Institute for Brain Research, Beijing, China(7)
Beijing Superstring Academy of Memory Technology, Beijing, China(7)
2024 8th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)(4)
IEEE Electron Device Letters(4)
IEEE Transactions on Electron Devices(3)
2022 IEEE 16th International Conference on Solid-State & Integrated Circuit Technology (ICSICT)(2)
2022 International Electron Devices Meeting (IEDM)(2)
IEEE(29)
Bangalore, India(4)
San Francisco, CA, USA(3)
Lisbon, Portugal(2)
Nangjing, China(2)
Shanghai, China(2)
Ferroelectric Polarization(9)
Ferroelectric Layer(8)
Ferroelectric Field-effect Transistor(7)
Polarization Switching(7)
Memory Window(6)

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Results

Logic-Compatible Asymmetrical FET for Gain Cell eDRAM With Long Retention and Fast Access Speed

Kaifeng Wang;Pengfei Hao;Fangxing Zhang;Lining Zhang;Qianqian Huang;Ru Huang

IEEE Journal of the Electron Devices Society

Year: 2025 | Volume: 13 | Journal Article |

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A novel Asymmetrical FET (AsyFET) is proposed to enhance the retention of gain cell memory and is experimentally demonstrated based on standard 300mm logic foundry platform. In AsyFET, the asymmetrical S/D doping and S/D gate spacer are designed to suppress leakage current. The modulated Schottky direct tunneling current and band-to-band tunneling current are designed to write “1” and “0” respecti...Show More

Logic-Compatible Asymmetrical FET for Gain Cell eDRAM With Long Retention and Fast Access Speed

Kaifeng Wang;Pengfei Hao;Fangxing Zhang;Lining Zhang;Qianqian Huang;Ru Huang

IEEE Journal of the Electron Devices Society

Year: 2025 | Volume: 13 | Journal Article |

Demonstration of Low-Power Three-Dimensional CMOS Inverters Based on Si p-Tunnel FET and ITO n-FET

Anyu Tong;Kaifeng Wang;Qianlan Hu;Zhiyu Wang;Xiong Xiong;Shiwei Yan;Shenwu Zhu;Qijun Li;Yongqin Wu;Ye Ren;Weihai Bu;Qianqian Huang;Yanqing Wu;Ru Huang

IEEE Electron Device Letters

Year: 2025 | Volume: 46, Issue: 3 | Journal Article |

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In this work, low-power CMOS inverter and 5-stage ring oscillator (RO) are demonstrated based on heterogeneous 3D integration of vertically stacked FEOL p-type silicon tunnel FET (TFET) and BEOL n-type indium-tin-oxide (ITO) FET. Owing to the low off-state current of both p-type and n-type FET, our ITO/TFET heterogeneous 3D integrated CMOS inverters show a low static power of 4.83 pW at ${\text{V...Show More

Demonstration of Low-Power Three-Dimensional CMOS Inverters Based on Si p-Tunnel FET and ITO n-FET

Anyu Tong;Kaifeng Wang;Qianlan Hu;Zhiyu Wang;Xiong Xiong;Shiwei Yan;Shenwu Zhu;Qijun Li;Yongqin Wu;Ye Ren;Weihai Bu;Qianqian Huang;Yanqing Wu;Ru Huang

IEEE Electron Device Letters

Year: 2025 | Volume: 46, Issue: 3 | Journal Article |

Novel Ferroelectric-Based Ising Machine Featuring Reconfigurable Arbitrary Ising Graph and Controllable Annealing Through Device-Algorithm Co-Optimization

Weikai Xu;Jin Luo;Zhiyuan Fu;Runze Han;Shengyu Bao;Kaifeng Wang;Qianqian Huang;Ru Huang

2024 IEEE International Electron Devices Meeting (IEDM)

Year: 2024 | Conference Paper |

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For the first time, a ferroelectric (FE)-based Ising machine (FE-Ising) is proposed and experimentally demonstrated with the fully-flexible spin $(\sigma)$ connectivity and the lowest hardware cost through device-algorithm co-optimization. For the Ising topology, a novel interaction $(J)$-centric topology is proposed, which enables reconfigurable arbitrary Ising graph without the need of extra con...Show More

Novel Ferroelectric-Based Ising Machine Featuring Reconfigurable Arbitrary Ising Graph and Controllable Annealing Through Device-Algorithm Co-Optimization

Weikai Xu;Jin Luo;Zhiyuan Fu;Runze Han;Shengyu Bao;Kaifeng Wang;Qianqian Huang;Ru Huang

2024 IEEE International Electron Devices Meeting (IEDM)

Year: 2024 | Conference Paper |

Endurance Enhancement in Hafnia-Based Ferroelectric Capacitor Through Anti-ferroelectric Zirconia Seed Layer for Memory Applications

Mengxuan Yang;Kaifeng Wang;Bocheng Yu;Zhiyuan Fu;Chang Su;Qianqian Huang;Ru Huang

IEEE Journal of the Electron Devices Society

Year: 2024 | Early Access Article |

In this work, the ferroelectric (FE) Hf0.5Zr0.5O2 (HZO) capacitor with a novel anti-ferroelectric (AFE) ZrO2 seed layer is thoroughly investigated for memory applications, by comparing with both HZO capacitors without seed layer and with O-phase-dominated ZrO2 seed layer. A fully vacuum-sealed system is used for device fabrication to mitigate the interfacial defects during the material growth proc...Show More

Endurance Enhancement in Hafnia-Based Ferroelectric Capacitor Through Anti-ferroelectric Zirconia Seed Layer for Memory Applications

Mengxuan Yang;Kaifeng Wang;Bocheng Yu;Zhiyuan Fu;Chang Su;Qianqian Huang;Ru Huang

IEEE Journal of the Electron Devices Society

Year: 2024 | Early Access Article |

A Novel Ferroelectric FET based Multibit Content Addressable Memory with Dynamic and Static Modes for Energy-Efficient Training and Inference

Weikai Xu;Jin Luo;Boyi Fu;Zerui Chen;Zhiyuan Fu;Kaifeng Wang;Qianqian Huang;Ru Huang

2024 IEEE European Solid-State Electronics Research Conference (ESSERC)

Year: 2024 | Conference Paper |

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In this work, a novel multibit content addressable memory (CAM) based on complementary ferroelectric FET (FeFET) with split-gate, enabling both dynamic and static modes, is proposed and experimentally demonstrated for the first time. For dynamic CAM (DCAM), by utilizing the complementary polarity engineering and the non-destructive readout of n/p-type FeFET, only single storage capacitor and singl...Show More

A Novel Ferroelectric FET based Multibit Content Addressable Memory with Dynamic and Static Modes for Energy-Efficient Training and Inference

Weikai Xu;Jin Luo;Boyi Fu;Zerui Chen;Zhiyuan Fu;Kaifeng Wang;Qianqian Huang;Ru Huang

2024 IEEE European Solid-State Electronics Research Conference (ESSERC)

Year: 2024 | Conference Paper |

Self-Supervised Monocular Depth Estimation for Endoscopic Imaging

Changsheng Li;Xue Li;Kaifeng Wang;Wenxin Chen;Qingyao Liu;Xingguang Duan

IEEE Journal of Biomedical and Health Informatics

Year: 2024 | Early Access Article |

Endoscopy holds a pivotal role in the early detection and treatment of diverse diseases, with artificial intelligence (AI)-assisted methods increasingly gaining prominence in disease screening. Among them, the depth estimation from endoscopic sequences is crucial for a spectrum of AI-assisted surgical techniques. However, the development of endoscopic depth estimation algorithms presents a formida...Show More

Self-Supervised Monocular Depth Estimation for Endoscopic Imaging

Changsheng Li;Xue Li;Kaifeng Wang;Wenxin Chen;Qingyao Liu;Xingguang Duan

IEEE Journal of Biomedical and Health Informatics

Year: 2024 | Early Access Article |

Capacitance Modeling With Charge Partitions Covering Full-Region Operations of TFETs

Fangxing Zhang;Wu Dai;Kaifeng Wang;Yu Li;Baokang Peng;Hongyan Han;Ye Ren;Yongqin Wu;Weihai Bu;Qianqian Huang;Runsheng Wang;Lining Zhang;Ru Huang

IEEE Transactions on Electron Devices

Year: 2024 | Volume: 71, Issue: 7 | Journal Article |

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An accurate physics-based capacitance model is developed covering full-region operations of silicon TFET (Si-TFET) with all biasing conditions. The intrinsic and parasitic capacitances are modeled by the surface-potential-based method and justified by calibrated TCAD simulations. To address the challenges of a classical physics-based model in calculating the charge partitions, an artificial neural...Show More

Capacitance Modeling With Charge Partitions Covering Full-Region Operations of TFETs

Fangxing Zhang;Wu Dai;Kaifeng Wang;Yu Li;Baokang Peng;Hongyan Han;Ye Ren;Yongqin Wu;Weihai Bu;Qianqian Huang;Runsheng Wang;Lining Zhang;Ru Huang

IEEE Transactions on Electron Devices

Year: 2024 | Volume: 71, Issue: 7 | Journal Article |

A Novel Ferroelectric FET Based Universal Content Addressable Memory With Reconfigurability for Area- and Energy-Efficient In-Memory-Searching System

Weikai Xu;Jin Luo;Zerui Chen;Boyi Fu;Zhiyuan Fu;Kaifeng Wang;Qianqian Huang;Ru Huang

IEEE Electron Device Letters

Year: 2024 | Volume: 45, Issue: 7 | Journal Article |

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In this work, a novel ferroelectric FET (FeFET)-based universal content addressable memory (UCAM) is proposed and experimentally demonstrated for the first time. By utilizing the non-volatile multilevel ferroelectric polarization for entry storage and the contrary monotonicity of N-type and P-type FeFETs for query searching, the reconfigurable UCAM enables binary CAM, ternary CAM, multibit CAM and...Show More

A Novel Ferroelectric FET Based Universal Content Addressable Memory With Reconfigurability for Area- and Energy-Efficient In-Memory-Searching System

Weikai Xu;Jin Luo;Zerui Chen;Boyi Fu;Zhiyuan Fu;Kaifeng Wang;Qianqian Huang;Ru Huang

IEEE Electron Device Letters

Year: 2024 | Volume: 45, Issue: 7 | Journal Article |

A Novel Hafnia-based Ferroelectric Capacitor with Antiferroelectric Zirconia Seed Layer for High Ferroelectricity and Endurance

Mengxuan Yang;Kaifeng Wang;Bocheng Yu;Zhiyuan Fu;Chang Su;Ru Huang;Qianqian Huang

2024 8th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)

Year: 2024 | Conference Paper |

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In this work, a new $\mathrm{Hf}\_{0.5} \mathrm{Zr}\_{0.5} \mathrm{O}\_{2}$ (HZO)-based ferroelectric (FE) capacitor with a T-phase-dominated anti-ferroelectric (AFE) ZrO2 seed layer is proposed and experimentally demonstrated, with enhanced ferroelectricity and endurance behavior simultaneously compared with conventional HZO FE capacitor or O-phase-dominated $\mathrm{ZrO}_{2} / \mathrm{HZO}$ capa...Show More

A Novel Hafnia-based Ferroelectric Capacitor with Antiferroelectric Zirconia Seed Layer for High Ferroelectricity and Endurance

Mengxuan Yang;Kaifeng Wang;Bocheng Yu;Zhiyuan Fu;Chang Su;Ru Huang;Qianqian Huang

2024 8th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)

Year: 2024 | Conference Paper |

A Novel Complementary Ferroelectric FET based Compressed Multibit Content Addressable Memory with High Area- and Energy-Efficiency

Weikai Xu;Jin Luo;Zhiyuan Fu;Kaifeng Wang;Qianqian Huang;Ru Huang

2024 8th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)

Year: 2024 | Conference Paper |

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In this work, for the first time, a novel complementary ferroelectric FET (FeFET) based multibit content addressable memory (MCAM) with entry compression capability (compressed MCAM), is proposed and experimentally demonstrated for both exact matching and wildcard matching of multibit entries. By utilizing the contrary monotonicity of n-type FeFET and p-type FeFET with independently modulated ferr...Show More

A Novel Complementary Ferroelectric FET based Compressed Multibit Content Addressable Memory with High Area- and Energy-Efficiency

Weikai Xu;Jin Luo;Zhiyuan Fu;Kaifeng Wang;Qianqian Huang;Ru Huang

2024 8th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)

Year: 2024 | Conference Paper |

Physical Modeling of Hafnia-based 3D Ferroelectric Polarization Switching with Cylindrical Structure

Chang Su;Minyue Deng;Liang Chen;Kaifeng Wang;Zhiyuan Fu;Shaodi Xu;Ru Huang;Qianqian Huang

2024 8th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)

Year: 2024 | Conference Paper |

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In this work, a dedicated model for HfO2-based 3D ferroelectric capacitor (FeCAP) with multi-domain polarization switching is proposed, which can capture radial symmetry in geometry for the first time. It reveals the crucial role of cylinder curvature on electrical characteristics and optimum geometry dimension, providing guidance for device optimization. Furthermore, based on the proposed model, ...Show More

Physical Modeling of Hafnia-based 3D Ferroelectric Polarization Switching with Cylindrical Structure

Chang Su;Minyue Deng;Liang Chen;Kaifeng Wang;Zhiyuan Fu;Shaodi Xu;Ru Huang;Qianqian Huang

2024 8th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)

Year: 2024 | Conference Paper |

A Novel Small-Signal Ferroelectric Memcapacitor based Capacitive Computing-In-Memory for Area- and Energy-Efficient Quantized Neural Networks

Weikai Xu;Jin Luo;Boyi Fu;Zhiyuan Fu;Kaifeng Wang;Chang Su;Qianqian Huang;Ru Huang

2024 8th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)

Year: 2024 | Conference Paper |

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In this work, a novel small-signal ferroelectric (FE) memcapacitor (FeCap) based capacitive computing-in-memory (CIM) for quantized neural networks (QNNs) is proposed and experimentally demonstrated. By utilizing the non-monotonic FE small-signal capacitance for signed weight storage and non-destructive readout for input activation, the linearly non-separable signed binary multiplication is implem...Show More

A Novel Small-Signal Ferroelectric Memcapacitor based Capacitive Computing-In-Memory for Area- and Energy-Efficient Quantized Neural Networks

Weikai Xu;Jin Luo;Boyi Fu;Zhiyuan Fu;Kaifeng Wang;Chang Su;Qianqian Huang;Ru Huang

2024 8th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)

Year: 2024 | Conference Paper |

PPFormer: A Novel Model for Polyp Segmentation in Digestive Endoscopy

Wenxin Chen;Kaifeng Wang;Chao Qian;Xue Li;Changsheng Li;Xingguang Duan

IEEE Transactions on Medical Robotics and Bionics

Year: 2024 | Volume: 6, Issue: 2 | Journal Article |

Cited by: Papers (3)

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Polyp segmentation is a pivotal task in the field of medical image processing. We devised a more effective deep learning model (PPFormer) that seamlessly integrates pyramid pooling module with transformer. This integration significantly improves the model’s ability to restore intricate details during the decoding phase. Additionally, we rethinked the importance of multi-scale feature maps within t...Show More

PPFormer: A Novel Model for Polyp Segmentation in Digestive Endoscopy

Wenxin Chen;Kaifeng Wang;Chao Qian;Xue Li;Changsheng Li;Xingguang Duan

IEEE Transactions on Medical Robotics and Bionics

Year: 2024 | Volume: 6, Issue: 2 | Journal Article |

A Novel Small-Signal Ferroelectric Capacitance-Based Content Addressable Memory for Area- and Energy-Efficient Lifelong Learning

Weikai Xu;Zhiyuan Fu;Kaifeng Wang;Chang Su;Jin Luo;Zerui Chen;Qianqian Huang;Ru Huang

IEEE Electron Device Letters

Year: 2024 | Volume: 45, Issue: 1 | Journal Article |

Cited by: Papers (5)

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In this work, for the first time, a novel energy- and area-efficient ferroelectric (FE) small-signal capacitance based content addressable memory (CAM) design is proposed and experimentally demonstrated. It can accurately perform distance metric in high linearity for feature storage and retrieval of memory-augmented neural network (MANN). By utilizing the non-monotonic FE small-signal capacitance,...Show More

A Novel Small-Signal Ferroelectric Capacitance-Based Content Addressable Memory for Area- and Energy-Efficient Lifelong Learning

Weikai Xu;Zhiyuan Fu;Kaifeng Wang;Chang Su;Jin Luo;Zerui Chen;Qianqian Huang;Ru Huang

IEEE Electron Device Letters

Year: 2024 | Volume: 45, Issue: 1 | Journal Article |

Novel Asymmetric Operation Scheme for HfO2-Based FeRAM Based on Reconstruction of Ferroelectric Dynamics Impacts

Zhiyuan Fu;Kaifeng Wang;Shaodi Xu;Qianqian Huang;Ru Huang

IEEE Electron Device Letters

Year: 2024 | Volume: 45, Issue: 1 | Journal Article |

Cited by: Papers (1)

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In this work, with the consideration of pulsing sequence of FeRAM operation, the impacts of hafnia-based ferroelectric (FE) dynamics on polarization switching and memory window (MW) are experimentally investigated. For the first time, it is found that additional polarization switching when read “0” ( ${P}_{ {SW}{0}}$ ) occurs, and the change of ${P}_{ {SW}{0}}$ is non-monotonical with varied pul...Show More

Novel Asymmetric Operation Scheme for HfO2-Based FeRAM Based on Reconstruction of Ferroelectric Dynamics Impacts

Zhiyuan Fu;Kaifeng Wang;Shaodi Xu;Qianqian Huang;Ru Huang

IEEE Electron Device Letters

Year: 2024 | Volume: 45, Issue: 1 | Journal Article |

A Surface Potential Based Full-Region Current Model for Doping Segregated TFETs

Fangxing Zhang;Hao Li;Kaifeng Wang;Wu Dai;Yanxin Jiao;Feilong Ding;Ye Ren;Yongqin Wu;Weihai Bu;Qianqian Huang;Lining Zhang;Ru Huang

IEEE Transactions on Electron Devices

Year: 2024 | Volume: 71, Issue: 1 | Journal Article |

Cited by: Papers (2)

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A physics-based SPICE model for dopant segregated tunneling field-effect transistors (DS-TFETs) with gate-to-drain underlap is developed for the design technology co-optimization (DTCO) of TFETs with the foundry process. It captures all the current components in full operation regions, including band-to-band tunneling (BTBT), forward p-i-n diode, gate leakage, and also ambipolar conduction. The ch...Show More

A Surface Potential Based Full-Region Current Model for Doping Segregated TFETs

Fangxing Zhang;Hao Li;Kaifeng Wang;Wu Dai;Yanxin Jiao;Feilong Ding;Ye Ren;Yongqin Wu;Weihai Bu;Qianqian Huang;Lining Zhang;Ru Huang

IEEE Transactions on Electron Devices

Year: 2024 | Volume: 71, Issue: 1 | Journal Article |

A Novel TFET-MOSFET Hybrid SRAM for Ultra-Low-Power Applications

Renjie Wei;Kaifeng Wang;Zhixuan Wang;Libo Yang;Fangxing Zhang;Yongqin Wu;Ye Ren;Le Ye;Lining Zhang;Weihai Bu;Ru Huang;Qianqian Huang

2023 IEEE 15th International Conference on ASIC (ASICON)

Year: 2023 | Conference Paper |

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Tunnel Field Effect Transistor (TFET) which has a subthreshold swing lower than 60mV/decade and ultra-low off-current has become one of the most promising candidates to replace MOSFET in ultra-low-power applications, such as artificial intelligence of things. In this paper, we study the TFET-based static random access memory (SRAM) design and propose a novel 8T TFET-MOSFET hybrid SRAM based on the...Show More

A Novel TFET-MOSFET Hybrid SRAM for Ultra-Low-Power Applications

Renjie Wei;Kaifeng Wang;Zhixuan Wang;Libo Yang;Fangxing Zhang;Yongqin Wu;Ye Ren;Le Ye;Lining Zhang;Weihai Bu;Ru Huang;Qianqian Huang

2023 IEEE 15th International Conference on ASIC (ASICON)

Year: 2023 | Conference Paper |

A Physical MFIS-FeFET Model with Awareness of Drain-Induced Spatially-Distributed Polarization and Ferroelectric Parametric Fluctuation

Chang Su;Ning Feng;Kaifeng Wang;Lining Zhang;Ru Huang;Qianqian Huang

2023 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)

Year: 2023 | Conference Paper |

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The spatially-distributed polarization effect in ferroelectric FET (FeFET) induced by nonzero drain bias is recently found to have a great influence on device and circuit performance, especially for content addressable memory operation, while this physics is ignored in conventional modeling method of FeFET. In this work, we developed a perturbative modeling framework for distributed FeFET, which c...Show More

A Physical MFIS-FeFET Model with Awareness of Drain-Induced Spatially-Distributed Polarization and Ferroelectric Parametric Fluctuation

Chang Su;Ning Feng;Kaifeng Wang;Lining Zhang;Ru Huang;Qianqian Huang

2023 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)

Year: 2023 | Conference Paper |

First Foundry Platform Demonstration of Hybrid Tunnel FET and MOSFET Circuits Based on a Novel Laminated Well Isolation Technology

Kaifeng Wang;Yongqin Wu;Ye Ren;Renjie Wei;Zerui Chen;Jianfeng Hang;Zhixuan Wang;Fangxing Zhang;Lining Zhang;Chunyu Peng;Xiulong Wu;Le Ye;Kai Zheng;Jin Kang;Xusheng Wu;Weihai Bu;Ru Huang;Qianqian Huang

ESSDERC 2023 - IEEE 53rd European Solid-State Device Research Conference (ESSDERC)

Year: 2023 | Conference Paper |

Cited by: Papers (2)

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With a novel laminated well isolation technology for complementary tunnel FET (TFET) devices, this work experimentally demonstrates the first bulk Si TFET-based circuits and hybrid TFET-CMOS circuits based on a 300mm CMOS foundry platform. By utilizing the proposed DTCO workflow, the designed novel laminated isolation well for bulk TFET can successfully suppress the parasitic leakage current betwe...Show More

First Foundry Platform Demonstration of Hybrid Tunnel FET and MOSFET Circuits Based on a Novel Laminated Well Isolation Technology

Kaifeng Wang;Yongqin Wu;Ye Ren;Renjie Wei;Zerui Chen;Jianfeng Hang;Zhixuan Wang;Fangxing Zhang;Lining Zhang;Chunyu Peng;Xiulong Wu;Le Ye;Kai Zheng;Jin Kang;Xusheng Wu;Weihai Bu;Ru Huang;Qianqian Huang

ESSDERC 2023 - IEEE 53rd European Solid-State Device Research Conference (ESSDERC)

Year: 2023 | Conference Paper |

New Insights into Read Current Margin and Memory Window of HfO2-based Ferroelectric FET with Re-exploration of the Role of Ferroelectric Dynamics and Interface Charges during Readout

Chang Su;Zhongxin Liang;Zhiyuan Fu;Shaodi Xu;Kaifeng Wang;Puyang Cai;Liang Chen;Ru Huang;Qianqian Huang

ESSDERC 2023 - IEEE 53rd European Solid-State Device Research Conference (ESSDERC)

Year: 2023 | Conference Paper |

Cited by: Papers (1)

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The read current margin and memory window (MW) of HfO2-based ferroelectric FET (FeFET) are comprehensively re-evaluated by considering the impacts of the ferroelectric dynamics and interface charges during the read operation. It is found that readout methods and read time can significantly influence the evaluation of MW and read current margin due to polarization switching dynamics, revealing the ...Show More

New Insights into Read Current Margin and Memory Window of HfO2-based Ferroelectric FET with Re-exploration of the Role of Ferroelectric Dynamics and Interface Charges during Readout

Chang Su;Zhongxin Liang;Zhiyuan Fu;Shaodi Xu;Kaifeng Wang;Puyang Cai;Liang Chen;Ru Huang;Qianqian Huang

ESSDERC 2023 - IEEE 53rd European Solid-State Device Research Conference (ESSDERC)

Year: 2023 | Conference Paper |

Reliability Performance of Novel Tunneling Field Effect Transistors Based On Foundry Platform

Yukun Tang;Qianqian Huang;Kaifeng Wang;Yongqin Wu;Hongyan Han;Ye Ren;Weihai Bu;Junhua Liu;Zhigang Ji;Ru Huang

2023 China Semiconductor Technology International Conference (CSTIC)

Year: 2023 | Conference Paper |

Cited by: Papers (2)

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In this work, the hot carrier injection (HCI) and negative bias temperature instability (NBTI) of a novel tunneling field effect transistor (TFET) manufactured by standard CMOS baseline platform is experimentally demonstrated. Results show that the reliability of the novel dopant segregated TFET (DS-TFET) is superior to the conventional MOSFET, and the reliability behavior of DS-TFET shows the sim...Show More

Reliability Performance of Novel Tunneling Field Effect Transistors Based On Foundry Platform

Yukun Tang;Qianqian Huang;Kaifeng Wang;Yongqin Wu;Hongyan Han;Ye Ren;Weihai Bu;Junhua Liu;Zhigang Ji;Ru Huang

2023 China Semiconductor Technology International Conference (CSTIC)

Year: 2023 | Conference Paper |

New Understanding of Memory Window Reduction Induced by Ferroelectric Dynamics for HfO2-based 1T1C FeRAM

Zhiyuan Fu;Mengxuan Yang;Kaifeng Wang;Qianqian Huang;Ru Huang

2023 Silicon Nanoelectronics Workshop (SNW)

Year: 2023 | Conference Paper |

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The memory window (MW) of $\mathbf{HfO}_{2}$ -based 1T1C FeRAM has been experimentally re-examined by considering the ferroelectric (FE) dynamics. It is found that not only the unsaturated polarization switching will reduce MW with smaller operation voltage and pulse width, but also the large depolarization field induced by multiple positive pulses will degrade the read “1” switching and thus lead...Show More

New Understanding of Memory Window Reduction Induced by Ferroelectric Dynamics for HfO2-based 1T1C FeRAM

Zhiyuan Fu;Mengxuan Yang;Kaifeng Wang;Qianqian Huang;Ru Huang

2023 Silicon Nanoelectronics Workshop (SNW)

Year: 2023 | Conference Paper |

New Understanding of Screen Radius and Re-evaluation of Memory Window in Cylindrical Ferroelectric Capacitor for High-density 1T1C FeRAM

Minyue Deng;Chang Su;Zhiyuan Fu;Kaifeng Wang;Ru Huang;Qianqian Huang

2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)

Year: 2023 | Conference Paper |

Cited by: Papers (1)

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In this work, the electrical characteristic and its physics of the 3D cylindrical ferroelectric capacitor (FeCAP) are investigated for high-density 1T1C FeRAM based on a proposed novel simulation method. Different from planar FeCAP, it is found that an intrinsic polarization loss exists in cylindrical FeCAP for low voltage operation. Besides, there is a screen cylinder surface inside the cylindric...Show More

New Understanding of Screen Radius and Re-evaluation of Memory Window in Cylindrical Ferroelectric Capacitor for High-density 1T1C FeRAM

Minyue Deng;Chang Su;Zhiyuan Fu;Kaifeng Wang;Ru Huang;Qianqian Huang

2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)

Year: 2023 | Conference Paper |

Novel Ferroelectric Tunnel FinFET based Encryption-embedded Computing-in-Memory for Secure AI with High Area-and Energy-Efficiency

Jin Luo;Hanyong Shao;Boyi Fu;Zhiyuan Fu;Weikai Xu;Kaifeng Wang;Mengxuan Yang;Yiqing Li;Xiao Lv;Qianqian Huang;Ru Huang

2022 International Electron Devices Meeting (IEDM)

Year: 2022 | Conference Paper |

Cited by: Papers (6)

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In this work, novel ferroelectric tunnel FET (FeTFET) is proposed and experimentally demonstrated to implement encryption-embedded computing-in-memory with non-volatility (nvCIM), enabling both in-situ key authentication and multiply-accumulate (MAC) operation with high area-and energy-efficiency. For the first time, XOR-cipher for weight encryption is merged into XNOR-based MAC, eliminating expli...Show More

Novel Ferroelectric Tunnel FinFET based Encryption-embedded Computing-in-Memory for Secure AI with High Area-and Energy-Efficiency

Jin Luo;Hanyong Shao;Boyi Fu;Zhiyuan Fu;Weikai Xu;Kaifeng Wang;Mengxuan Yang;Yiqing Li;Xiao Lv;Qianqian Huang;Ru Huang

2022 International Electron Devices Meeting (IEDM)

Year: 2022 | Conference Paper |

Novel Energy-efficient Hafnia-based Ferroelectric Processing-in-Sensor with in-situ Motion Detection and Four-quarter Mutipilcation

Zhiyuan Fu;Kaifeng Wang;Boyi Fu;Shaodi Xu;Hao Zheng;Jin Luo;Chang Su;Weikai Xu;Xiao Lv;Qianqian Huang;Ru Huang

2022 International Electron Devices Meeting (IEDM)

Year: 2022 | Conference Paper |

Cited by: Papers (1)

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In this work, CMOS-compatible ferroelectric (FE) $\mathrm{H}\mathrm{f}\mathrm{O}_{2}$ capacitor based processing-in-sensor (PIS) hardware is proposed and experimentally demonstrated for the first time, realizing zero-power sense and inference with in-situ motion detection and four-quarter multilevel multiply-accumulation (MAC). By utilizing the intrinsic pyroelectric effect and the multi-domain fe...Show More

Novel Energy-efficient Hafnia-based Ferroelectric Processing-in-Sensor with in-situ Motion Detection and Four-quarter Mutipilcation

Zhiyuan Fu;Kaifeng Wang;Boyi Fu;Shaodi Xu;Hao Zheng;Jin Luo;Chang Su;Weikai Xu;Xiao Lv;Qianqian Huang;Ru Huang

2022 International Electron Devices Meeting (IEDM)

Year: 2022 | Conference Paper |

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