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Temperature Dependence of the Impact Ionization Coefficients in AlAsSb Lattice Matched to InP
Xiao Jin;Shiyu Xie;Baolai Liang;Xin Yi;Harry Lewis;Leh W. Lim;Yifan Liu;Beng Koon Ng;Diana L. Huffaker;Chee Hing Tan;Duu Sheng Ong;John P. R. David
The temperature dependence of the ionization coefficients of AlAsSb has been determined from 210 K to 335 K by measuring the avalanche multiplication in a series of three p+-i-n+ and two n+-i-p+ diodes. Both electron and hole ionization coefficients reduce at approximately the same rate as the temperature increases but much less so than in InAlAs or InP. This results in a significantly smaller bre...Show More
Theoretical Analysis of AlAs₀.₅₆Sb₀.₄₄ Single Photon Avalanche Diodes With High Breakdown Probability
Jamal Ahmed;Shiyu Xie;Baolai Liang;Xin Yi;Xiao Jin;Manoj Kesaria;John P. R. David;Diana L. Huffaker
Single photon avalanche diodes (SPADs) are key enabling technologies for a wide range of applications in the near-infrared wavelength range. Recently, AlAs0.56 Sb0.44 (hereafter AlAsSb) lattice-matched to InP has been demonstrated for extremely low excess noise avalanche photodiodes (APDs) due to its large disparity between electron and hole ionization coefficients ( $\alpha $ and $\beta $ resp...Show More
GaAs based nanowire single photon avalanche diode (SPAD) has been demonstrated with extremely small afterpulsing probability and low dark count rate, and hence it has attracted wide attention for the near infrared applications. However, there is a lack of model to accurately evaluate the avalanche breakdown performance in nanowire SPAD with a spatially non-uniform electric field. In this work, we ...Show More
Electron and Proton Radiation Effects on Band Structure and Carrier Dynamics in MBE and MOCVD Grown III-V Test Structures
Andrew I. Hudson;Adam C. Scofield;William T. Lotshaw;Seth M. Hubbard;Michael A. Slocum;Bao-Lai Liang;Mukul C. Debnath;Bor-Chau Juang;Diana L. Huffaker
2018 18th European Conference on Radiation and Its Effects on Components and Systems (RADECS)
Year: 2018 | Conference Paper |
As part of a study on radiation effects in optoelectronic materials, we exposed a series of AIGaAs/GaAs double heterostructures grown by molecular beam epitaxy and metalorganic chemical vapor deposition to electron and proton radiation. The active regions of the test articles were either p-, n-, or unintentionally doped. Steady state and time resolved photoluminescence spectroscopy were used to ch...Show More
Electron and Proton Radiation Effects on Band Structure and Carrier Dynamics in MBE and MOCVD Grown III-V Test Structures
Andrew I. Hudson;Adam C. Scofield;William T. Lotshaw;Seth M. Hubbard;Michael A. Slocum;Bao-Lai Liang;Mukul C. Debnath;Bor-Chau Juang;Diana L. Huffaker
Year: 2018 | Conference Paper |
Electron and Proton Radiation Effects on Band Structure and Carrier Dynamics in MBE and MOCVD Grown III-V Test Structures
Andrew Hudson;Adam Scofield;William Lotshaw;Seth Hubbard;Michael Slocum;Baolai Liang;Mukul C. Debnath;Bor-Chau Juang;Diana L. Huffaker
As part of a continuing study on radiation effects in photovoltaic materials, we exposed a series of AlGaAs/GaAs double heterostructures grown by molecular beam epitaxy and metalorganic chemical vapor deposition to electron and proton radiation. The active regions of the test articles were doped either unintentionally, p-type or n-type. Steady state and time resolved photoluminescence spectroscopy...Show More
High-Power Terahertz Generation from Telecommunication-Compatible, Bias-Free Photoconductive Nano-Antennas
Deniz Turan;Nezih T. Yardimci;Zixuan Rong;Dingkun Ren;Hyunseok Kim;Diana Huffaker;Mona Jarrahi
2018 43rd International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz)
Year: 2018 | Conference Paper |
We present a telecommunication-compatible, bias-free photoconductive terahertz source with arrays of plasmonic nano-antennas. We demonstrate pulsed terahertz radiation with powers up to 72 μW., enabling time-domain terahertz spectroscopy over a 3 THz bandwidth with a 100 dB dynamic range.Show More
Simulation and Spectroscopy of Carrier Relaxation in GaSb and GaAs
A.C. Scofield;A.I. Hudson;B.L. Liang;B.C. Juang;D.L. Huffaker;S.M. Hubbard;W.T. Lotshaw
2017 IEEE 44th Photovoltaic Specialist Conference (PVSC)
Year: 2017 | Conference Paper |
Numerical simulation of carrier dynamics in GaAs and GaSb double heterostructures is used in combination with steady-state and time-resolved spectroscopy to extract quantitative material properties in order to predict the end performance of photovoltaic devices. We find that precise details of even simple double heterostructures, including barrier composition, surface recombination, substrate dopi...Show More
Investigation and Mitigation of Shunts for Higher Efficiency Epitaxial GaSb/GaSb and GaSb/GaAs Solar Cells
George T. Nelson;Bor-Chau Juang;Steve Johnston;Michael A. Slocum;Zachary S. Bittner;Ramesh B. Lagumavarapu;Diana Huffaker;Seth M. Hubbard
2017 IEEE 44th Photovoltaic Specialist Conference (PVSC)
Year: 2017 | Conference Paper |
Multi-junction cells using GaAs/GaSb interface misfit arrays for metamorphic growth can achieve comparable efficiency to conventional inverted metamorphic multijunction cells without the need for costly graded buffer layers. In this work, GaSb single junction cells were grown via molecular beam epitaxy on both GaSb and GaAs substrates to compare homoepitaxial and heteroepitaxial GaSb material qual...Show More
GaSb on GaAs interfacial misfit solar cells
George T. Nelson;Bor-Chau Juang;Michael Slocum;Zachary Bittner;Ramesh B. Lagumavarapu;Diana Huffaker;Seth Hubbard
2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC)
Year: 2016 | Conference Paper |
Cited by: Papers (3)
The GaAs/GaSb interface misfit design can achieve comparable efficiency to conventional inverted metamorphic multijunction cells at up to 30% cost reduction. In this preliminary work, GaSb single junctions were grown via molecular beam epitaxy on both GaSb and GaAs substrates to compare and fine tune the interfacial misfit growth process. Current vs voltage results show that the best homo-epitaxia...Show More
GaSb-based photon counting gamma-ray detectors
Bor-Chau Juang;David L. Prout;Baolai Liang;Arion F. Chatziioannou;Diana L. Huffaker
2016 74th Annual Device Research Conference (DRC)
Year: 2016 | Conference Paper |
The gamma-ray spectral response of MBE-grown homoepitaxial GaSb p-i-n photodiode has been investigated. The GaSb device showed great linearity and promising energy resolution across a wide range of photon energies, confirming that GaSb can offer high stopping power, high carrier mobility and low PCE that would be advantageous for its use in gamma-ray detection.Show More
Intermediate band solar cell design using InAs quantum dots in AlAsSb cladding
Seth M. Hubbard;Staffan Hellstroem;Zachary S. Bittner;Ramesh B. Laghumavarapu;Diana Huffaker
2015 IEEE 42nd Photovoltaic Specialist Conference (PVSC)
Year: 2015 | Conference Paper |
Cited by: Papers (1)
We present simulations of InAs QDs embedded in AlAsSb, which may be a promising candidate system for realizing intermediate band solar cells as it features bandgaps close to the ideal and a nearly flat type-II valence band lineup. We have also experimentally investigated InAs quantum dots (QDs) grown in an AlAs0.56Sb0.44 matrix in the unintentionally doped (uid) region of an In0.52Al0.48As solar c...Show More
Experimental examination of an InAs/GaAs(Sb)/AlAsSb quantum dot approach to the intermediate band solar cell
Zachary S. Bittner;Ramesh B. Laghumavarapu;Staffan Hellstroem;Diana Huffaker;Baolai Liang;Seth M. Hubbard
2014 IEEE 40th Photovoltaic Specialist Conference (PVSC)
Year: 2014 | Conference Paper |
Cited by: Papers (1)
In this study work towards an InAs/AlAs0.56Sb0.44 quantum dot (QD) prototype intermediate band solar cell(IBSC) grown on InP is presented. InAs QDs are suspended in an AlAs0.56Sb0.44/GaAs matrix in the unintentionally doped (uid) region of an In0.52Al0.48As solar cell are compared to a bulk In0.52Al0.48As solar cell. While addition of the InAs/AlAsSb matrix results in a drastic drop in AM1.5G perf...Show More
Reflection spectromicroscopy for the design of nanopillar optical antenna detectors
Alan C. Farrell;Pradeep Senanayake;Chung-Hong Hung;Marc Currie;Diana L. Huffaker
Semiconductor nanowires have proven to be a viable path towards nanoscale photodetectors [1], however the dramatic reduction in semiconductor absorption volume can have a negative effect on responsivity [2]. In order to overcome the reduced absorption volume, incident light must be focused within the nanopillar and surface reflections must be minimized. The ability to lithographically define the p...Show More
Towards intermediate-band solar cells with InAs/AlAsSb quantum dots
Meng Sun;Paul J. Simmonds;Ramesh Babu Laghumavarapu;Andrew Lin;Charles J. Reyner;Baolai Liang;Diana L. Huffaker
2013 IEEE 39th Photovoltaic Specialists Conference (PVSC)
Year: 2013 | Conference Paper |
Cited by: Papers (1)
The effects of GaAs1-xSbx thin cladding layers on the structural and optical properties of InAs self-assembled quantum dots (SAQDs) embedded in AlAs0.56Sb0.44 barriers were investigated. A cladding layer configuration of a layer of GaAs beneath the SAQDs, and a GaAs0.95Sb0.05 capping layer above improves SAQD morphology and enhances photoluminescence intensity. Power-dependent and time-resolved ph...Show More
GaSb/InGaAs quantum dot-well solar cells
Ramesh B. Laghumavarapu;Baolai L. Liang;Zachery Bittner;Tugba S. Navruz;Seth M. Hubbard;Andrew Norman;Diana L. Huffaker
2013 IEEE 39th Photovoltaic Specialists Conference (PVSC)
Year: 2013 | Conference Paper |
Cited by: Papers (1)
GaSb/InGaAs quantum dot-well (QDW) hybrid active regions with type-II band alignment are explored for increasing infrared absorption in GaAs solar cells. GaAs p-i-n structures studied in this work comprise five layers of either GaSb quantum dots (QD), InGaAs quantum wells (QW) or GaSb/InGaAs QDWs in the i-region. The QDW solar cells exhibited superior performance beyond the GaAs band edge compared...Show More
Experimental matrix study of leakage current in nanopillar-based devices towards high-efficiency photovoltaics
Giacomo Mariani;Clayton Tu;Zhengliu Zhou;Adam Scofield;Joshua Shapiro;Diana L. Huffaker
2013 IEEE 39th Photovoltaic Specialists Conference (PVSC)
Year: 2013 | Conference Paper |
In this work, we present a detailed leakage current study on arrays of GaAs p-n junction nanopillars grown by MOCVD.[1-2] Nanopillar/nanowire-based photovoltaics are actively examined as highly efficient solar absorbers. To achieve highly-performing devices, however, a methodical understanding of the nature of leakage currents is needed.[3] Reducing leakage currents is key to improve the diode cha...Show More
Room temperature continuous wave lasing in nanopillar photonic crystal cavities
A. C. Scofield;S-H Kim;J. N. Shapiro;A. Lin;B. L. Liang;A. Scherer;D. L. Huffaker
2012 Conference on Lasers and Electro-Optics (CLEO)
Year: 2012 | Conference Paper |
We demonstrate room temperature continuous wave lasing in bottom-up photonic crystal cavities formed by patterned III-V nanopillars. Single-cell high-Q photonic crystal cavities are formed with nanopillars by selective-area epitaxy. Control of the nanopillar geometry and heterostructures allows for high-Q and large confinement factor, resulting in a low threshold power density of 75 W/cm2 at 1040 ...Show More
High-perfomance patterned arrays of core-shell GaAs nanopillar solar cells with in-situ ingap passivation layer
2012 38th IEEE Photovoltaic Specialists Conference
Year: 2012 | Conference Paper |
Cited by: Papers (2)
In this work, we present nanostructured core-shell solar cells based on patterned GaAs nanopillars grown by MOCVD. [1] The patterns are photolithographically defined and center-to-center pitch, hole size and mask arrangement can be pre-determined at nanometric resolution. The inherently catalyst-free growth mode eliminates any metal (i.e. Au) diffusion into the nanopillars that could hinder the el...Show More
Short-Wave Infrared GaInAsSb Photodiodes Grown on GaAs Substrate by Interfacial Misfit Array Technique
Kalyan Chakravarthy Nunna;Siew Li Tan;Charles J. Reyner;Andrew Robert Julian Marshall;Baolai Liang;Anitha Jallipalli;John P. R. David;Diana L. Huffaker
IEEE Photonics Technology Letters
Cited by: Papers (27)
We report GaInAsSb-based p-i-n photodiodes operating in the 2-2.4-μm wavelength range grown on GaAs (100) substrates using the interfacial misfit (IMF) array technique. A zero-bias dynamic-resistance-area product of 260 Ωcm2 and a room temperature peak responsivity of 0.8 A/W (at 2 μm) with an estimated maximum detectivity (D*) of ~3.8×1010 cm Hz1/2 W-1 is obtained in the photodiodes at -0.2 V. Th...Show More
Electrochemical polymerization of PEDOT on catalyst-free patterned GaAs nanopillars for high efficiency hybrid photovoltaics 37th IEEE photovoltaic specialists conference
Giacomo Mariani;Yue Wang;Ping-Show Wong;Richard B. Kaner;Diana L. Huffaker
2011 37th IEEE Photovoltaic Specialists Conference
Year: 2011 | Conference Paper |
Cited by: Papers (1)
In this work, we present hybrid nanostructured core-shell solar cells based on patterned GaAs nanopillars grown by MOCVD, coated with electropolymerized poly(3,4-ethylenedioxythiophene) (PEDOT) polymer. The patterns are photolithographically defined and center-to-center pitch, hole size and mask arrangement can be precisely predetermined at nanometric resolution. Our inherently catalyst-free growt...Show More
Surface plasmon enhanced nanopillar photodetector array
P. N. Senanayake;C. H. Hung;J. Shapiro;A. Lin;D. L. Huffaker
IEEE Photonic Society 24th Annual Meeting
Year: 2011 | Conference Paper |
We demonstrate surface plasmon-enhaced nanopillar (NP) photodetector arrays in the near IR spectral range. Light coupling into the NPs takes place via surface plasmons through subwavelength, self-aligned metal holes. A novel fabrication technique produces elongated subwavelength holes in the gold top electrode such that the holes are self-aligned to the NPs. Surface plasmons excited on the metal/N...Show More
Low-threshold room-temperature lasing in bottom-up photonic crystal cavities formed by patterned III-V nanopillars
A.C. Scofield;S.-h. Kim;J.N. Shapiro;A. Lin;B.L. Liang;A. Scherer;D.L. Huffaker
69th Device Research Conference
Year: 2011 | Conference Paper |
In this work, we present a method whereby the photonic band gap region and active gain regions are formed simultaneously by selective-area metal-organic chemical vapor deposition. This approach allows us the ability to design device parameters lithographically. By accurate control of position and diameter of the NPs, high-g cavities can be formed entirely with NPs. This particular model cavity sup...Show More
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