Intermediate band solar cell design using InAs quantum dots in AlAsSb cladding

We present simulations of InAs QDs embedded in AlAsSb, which may be a promising candidate system for realizing intermediate band solar cells as it features bandgaps close to the ideal and a nearly flat type-II valence band lineup. We have also experimentally investigated InAs quantum dots (QDs) grown in an AlAs_0.56Sb_0.44 matrix in the unintentionally doped (uid) region of an In_0.52Al_0.48As solar cell. Optical and electrical properties of the solar cell were investigated to evaluate the possibility of photon assisted absorption from the QD states. As well, potential designs for a AlAs_0.56Sb_0.44 heterojunction QD solar cell were evaluated.