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In this paper, a detailed sensitivity study of Butler matrices is proposed. In particular, a Monte Carlo analysis is carried out on each block constituting the matrix to estimate its impact on the overall performance. The isolation level of the crossover transmission path is hence proved to be a critical part of the Butler matrix design. As it will be shown using both full-wave analysis and analyt...Show More
In this paper the design, measurements and retro-simulations of a 110-GHz 5th-order Chebyshev filter, based on substrate integrated waveguide in a $30-\mu\mathrm{m}$ thick BenzoCycloButene (BCB) above-IC technology, are presented. A center frequency of 101.5 GHz, corresponding to a 8.5-GHz frequency shift towards low frequencies, and 11.8% of fractional bandwidth are measured. The filter presents ...Show More
This paper introduces an experimental characterization of substrate integrated waveguide (SIW) components integrated in a benzocyclobutene-based interposer for WR10-band applications. High performance SIWs were experimentally validated, with a measured attenuation constant of 0.39 dB/mm and a quality factor of 27 at 90 GHz. The attenuation constant remains equal to 0.4 dB/mm between 85 GHz and 110...Show More
This work presents a comparative study of conventional and slow wave (SW) transmission lines implemented in an advanced 22-nm CMOS process. Both microstrip (MS) and coplanar waveguides (CPW) were analysed through simulations and measurements. A classical SW approach was used for the implementation of the SW CPWs while the SW effect was generated in the MS lines using bed of nails integrated in the...Show More
A 60-GHz innovative quadrature branch-line coupler is proposed in this letter. The device was implemented in a 22-nm CMOS process, from global foundries. The proposed design merges two miniaturization techniques. On the one hand, slow-wave microstrip (SW-MS) lines based on bed of nails are demonstrated in CMOS technology for the first time. On the other hand, the two quarter-wavelength MS line sec...Show More
In this work, the optimization of TSVs for SIWs embedded in a high-resistive silicon interposer is demonstrated. EM simulations are performed to analyze and optimize important TSV design parameters enabling silicon interposer technologies with low-loss SIWs working at mm-wave/THz frequencies. A silicon interposer using high resistive silicon and TSVs is fabricated and SIWs are characterized workin...Show More
This paper presents D-band mm-wave SIWs, which are embedded in a high-resistivity silicon interposer. Thanks to the interposer thickness equal to 70 μm, high-performance SIW were obtained, with measured attenuation constant between 0.4 and 0.6 dB/mm from 110 GHz to 170 GHz. These first results pave the way for the realization of high performance passive circuits and antennas embedded in the interp...Show More