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Kaiqiang Li

Publications

Citations

Publications by Year

20162024

Co-Authors:

Abdellah ChehriChao LiJingping QiaoXuan WangXin Wang

Show All Co-Authors (10)

Kaiqiang Li

Affiliation

School of Information Science and Engineering

Shandong Normal University

Jinan, China

Publication Topics

Autonomous Underwater Vehicles,
Undersea,
2D Images,
3D Detection,
3D Object Detection,
3D Point,
Angular Velocity,
Autonomous Vehicles,
Body Frame,
Buoyancy,
Camera Coordinate,
Camera Images

Biography

Kaiqiang Li was born in Weifang, Shandong, China, in 1999. He received the B.S. degree in computer science and technology from Yantai University in 2022, where he is currently pursuing the master’s degree. His research interests include multi-sensor fusion 3D object detection and scene understanding for autonomous driving.(Based on document published on 27 September 2023).

Publications

Citations

Publications by Year

20162024

Co-Authors:

Abdellah Chehri
Chao Li
Jingping Qiao
Xuan Wang
Xin Wang

Show All Co-Authors (10)

Author's Published Works

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Conferences (2)

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B. Wood(2)
R.J. Trainor(1)
G. Dolny(1)
C. Munson(1)
R.K. Keinigs(1)
Los Alamos National Laboratory, Los Alamos, NM, US(1)
Discrete Power Product Development, Lntersil Corporation, Mountaintop, PA, USA(1)
12th International Symposium on Power Semiconductor Devices & ICs. Proceedings (Cat. No.00CH37094)(1)
IEEE Conference Record - Abstracts. 1999 IEEE International Conference on Plasma Science. 26th IEEE International Conference (Cat. No.99CH36297)(1)
IEEE(2)
Monterey, CA, USA(1)
Toulouse, France(1)
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Optimizing 600 V punchthrough IGBT's for unclamped inductive switching (UIS)

J. Yedinak;B. Wood;P. Shenoy;G. Dolny;D. Lange;T. Morthorst

12th International Symposium on Power Semiconductor Devices & ICs. Proceedings (Cat. No.00CH37094)

Year: 2000 | Conference Paper |

Cited by: Papers (6)

In this paper, we analyze the UIS capability of punchthrough (PT) IGBTs both experimentally, and through non-isothermal two-dimensional numerical simulations. It is shown that the UIS failure mechanism is determined by the open-base p-n-p structure inherent in the IGBT. By optimizing the open base p-n-p, avalanche induced second breakdown can be prevented at current densities in excess of 1000 A/c...Show More

Optimizing 600 V punchthrough IGBT's for unclamped inductive switching (UIS)

J. Yedinak;B. Wood;P. Shenoy;G. Dolny;D. Lange;T. Morthorst

12th International Symposium on Power Semiconductor Devices & ICs. Proceedings (Cat. No.00CH37094)

Year: 2000 | Conference Paper |

Simulations of the formation of strongly coupled plasmas using pulsed power

R.K. Keinigs;B. Wood;C. Munson;R.J. Trainor

IEEE Conference Record - Abstracts. 1999 IEEE International Conference on Plasma Science. 26th IEEE International Conference (Cat. No.99CH36297)

Year: 1999 | Conference Paper |

Summary form only given. One experimental campaign planned for the pulse power facility, Atlas, will be devoted to the investigation of strongly-coupled plasma (SCP) effects on transport phenomena and equations-of-state in high-Z materials. Methods for forming strongly coupled plasmas using the pulsed-power facility, Atlas, are currently under investigation. For SCP experiments being planned, a me...Show More

Simulations of the formation of strongly coupled plasmas using pulsed power

R.K. Keinigs;B. Wood;C. Munson;R.J. Trainor

IEEE Conference Record - Abstracts. 1999 IEEE International Conference on Plasma Science. 26th IEEE International Conference (Cat. No.99CH36297)

Year: 1999 | Conference Paper |

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