Ananth Saran Yalamarthy - IEEE Xplore Author Profile
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Ananth Saran Yalamarthy

Also published under: Ananth Saran Yalamarthy*

Publications
11
Citations
174
Publications by Year
20152022
Co-Authors:
Show All Co-Authors (39)
Image of author Ananth Saran Yalamarthy

Ananth Saran Yalamarthy

Also published under: Ananth Saran Yalamarthy*

Affiliation

Department of Mechanical Engineering
Stanford University
Stanford, CA, USA

Publication Topics

Biography

Ananth Saran Yalamarthy received the B.Tech. degree in mechanical engineering from the Indian Institute of Technology Madras, Madras, India, in 2014, and the Ph.D. degree from the Department of Mechanical Engineering, Stanford University, Stanford, CA, USA, in 2019. His research interests are in the intersection of energy, electronics, and MEMS devices, with a special focus on wide-band gap materials.(Based on document published on 23 November 2021).
Publications
11
Citations
174
Publications by Year
20152022
Co-Authors:
Show All Co-Authors (39)
Author's Published Works

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Hall-Effect Sensor Technique for No Induced Voltage in AC Magnetic Field Measurements Without Current Spinning

Anand Vikas Lalwani;Ananth Saran Yalamarthy;Hannah S. Alpert;Maximillian Holliday;Savannah R. Eisner;Caitlin A. Chapin;Debbie G. Senesky

IEEE Sensors Journal
Year: 2022 | Volume: 22, Issue: 2 | Journal Article |
Cited by: Papers (4)
Accurately sensing AC magnetic field signatures poses a series of challenges to commonly used Hall-effect sensors. In particular, induced voltage and lack of high-frequency spinning methods are bottlenecks in the measurement of AC magnetic fields. We describe a magnetic field measurement technique that can be implemented in two ways: 1) the current driving the Hall-effect sensor is oscillating at ...Show More

Hall-Effect Sensor Technique for No Induced Voltage in AC Magnetic Field Measurements Without Current Spinning

Anand Vikas Lalwani;Ananth Saran Yalamarthy;Hannah S. Alpert;Maximillian Holliday;Savannah R. Eisner;Caitlin A. Chapin;Debbie G. Senesky

Year: 2022 | Volume: 22, Issue: 2 | Journal Article |

Extended Exposure of Gallium Nitride Heterostructure Devices to a Simulated Venus Environment

Savannah R. Eisner;Hannah S. Alpert;Caitlin A. Chapin;Ananth Saran Yalamarthy;Peter F. Satterthwaite;Ardalan Nasiri;Sara Port;Simon Ang;Debbie G. Senesky

2021 IEEE Aerospace Conference (50100)
Year: 2021 | Conference Paper |
Cited by: Papers (10)
Further development of harsh environment electronics capable of uncooled operation under Venus surface atmospheric conditions (~460°C, ~92 bar, corrosive) would enable future missions to the surface of Venus to operate for up to a year. Wide band-gap gallium nitride (GaN) heterostructure devices are attractive candidates for Venus lander missions due to their ability to withstand high-temperature ...Show More

Extended Exposure of Gallium Nitride Heterostructure Devices to a Simulated Venus Environment

Savannah R. Eisner;Hannah S. Alpert;Caitlin A. Chapin;Ananth Saran Yalamarthy;Peter F. Satterthwaite;Ardalan Nasiri;Sara Port;Simon Ang;Debbie G. Senesky

Year: 2021 | Conference Paper |

Low Offset and Noise in High Biased GaN 2DEG Hall-Effect Plates Investigated With Infrared Microscopy

Karen M. Dowling;Tanya Liu;Hannah S. Alpert;Caitlin A. Chapin;Savannah R. Eisner;Ananth Saran Yalamarthy;Peter F. Satterthwaite;Helmut Köck;Udo Ausserlechner;Mehdi Asheghi;Kenneth E. Goodson;Debbie G. Senesky

Journal of Microelectromechanical Systems
Year: 2020 | Volume: 29, Issue: 5 | Journal Article |
Cited by: Papers (10)
This article presents GaN two-dimensional electron gas (2DEG) Hall plates with low residual offset and noise at 3 V input bias. We studied devices made from three consecutive fabrication generations through current spinning offset measurements in a zero-field chamber. When operated above 1 V, the first-generation devices charted high residual offsets 1 mT. We reduced these residual offsets by thre...Show More

Low Offset and Noise in High Biased GaN 2DEG Hall-Effect Plates Investigated With Infrared Microscopy

Karen M. Dowling;Tanya Liu;Hannah S. Alpert;Caitlin A. Chapin;Savannah R. Eisner;Ananth Saran Yalamarthy;Peter F. Satterthwaite;Helmut Köck;Udo Ausserlechner;Mehdi Asheghi;Kenneth E. Goodson;Debbie G. Senesky

Year: 2020 | Volume: 29, Issue: 5 | Journal Article |

Stable Operation of AlGaN/GaN HEMTs for 25 h at 400°C in air

Saleh Kargarrazi;Ananth Saran Yalamarthy;Peter F. Satterthwaite;Scott William Blankenberg;Caitlin Chapin;Debbie G. Senesky

IEEE Journal of the Electron Devices Society
Year: 2019 | Volume: 7 | Journal Article |
Cited by: Papers (33)
Extreme environments such as the Venus atmosphere are among the emerging applications that demand electronics that can withstand high-temperature oxidizing conditions. While wide-bandgap technologies for integrated electronics have been developed so far, they either suffer from gate oxide and threshold voltage (Vth) degradation over temperature, large power supply requirements, or intrinsic base c...Show More

Stable Operation of AlGaN/GaN HEMTs for 25 h at 400°C in air

Saleh Kargarrazi;Ananth Saran Yalamarthy;Peter F. Satterthwaite;Scott William Blankenberg;Caitlin Chapin;Debbie G. Senesky

Year: 2019 | Volume: 7 | Journal Article |

Gallium Nitride Photodetector Measurements of UV Emission from a Gaseous CH4/O2 Hybrid Rocket Igniter Plume

Hannah S. Alpert;Ananth Saran Yalamarthy;Peter F. Satterthwaite;Elizabeth Jens;Jason Rabinovitch;Noah Scandrette;Akm Newaz;Ashley C. Karp;Debbie G. Senesky

2019 IEEE Aerospace Conference
Year: 2019 | Conference Paper |
Cited by: Papers (4)
Owing to its wide (3.4 eV) and direct-tunable band gap, gallium nitride (GaN) is an excellent material platform to make UV photo detectors. GaN is also stable in radiation-rich and high-temperature environments, which makes photo detectors fabricated using this material useful for in-situ flame detection and combustion monitoring. In this paper, we use a GaN photo detector to measure ultraviolet (...Show More

Gallium Nitride Photodetector Measurements of UV Emission from a Gaseous CH4/O2 Hybrid Rocket Igniter Plume

Hannah S. Alpert;Ananth Saran Yalamarthy;Peter F. Satterthwaite;Elizabeth Jens;Jason Rabinovitch;Noah Scandrette;Akm Newaz;Ashley C. Karp;Debbie G. Senesky

Year: 2019 | Conference Paper |

Process-induced anomalous current transport in graphene/InAlN/GaN heterostructured diodes

Peter F. Satterthwaite;Ananth Saran Yalamarthy;Sam Vaziri;Miguel Muñoz Rojo;Eric Pop;Debbie G. Senesky

2019 IEEE International Reliability Physics Symposium (IRPS)
Year: 2019 | Conference Paper |
Cited by: Papers (1)
Graphene and III-nitride semiconductors are promising materials platforms for the development of high-frequency, high-power electronic devices. Successful integration of these materials, however, requires a detailed understanding of the electrical properties of the graphene/III-nitride interface. In this work, we investigate the interfacial charge carrier transport across the graphene/InAIN interf...Show More

Process-induced anomalous current transport in graphene/InAlN/GaN heterostructured diodes

Peter F. Satterthwaite;Ananth Saran Yalamarthy;Sam Vaziri;Miguel Muñoz Rojo;Eric Pop;Debbie G. Senesky

Year: 2019 | Conference Paper |

Micro-Tesla Offset in Thermally Stable AlGaN/GaN 2DEG Hall Plates Using Current Spinning

Karen M. Dowling;Hannah S. Alpert;Ananth Saran Yalamarthy*;Peter F. Satterthwaite;Sai Kumar;Helmut Köck;Udo Ausserlechner;Debbie G. Senesky

IEEE Sensors Letters
Year: 2019 | Volume: 3, Issue: 3 | Journal Article |
Cited by: Papers (16)
This article describes the characterization of a low-offset Hall plate using the AlGaN/GaN 2-D electron gas (2DEG). A four-phase current spinning technique was used to reduce the sensor offset voltage to values in the range of ~20 nV, which corresponds to a low residual offset of ~3.4 ± 2 μT when supplied with low voltages (0.25-1 V). These offsets are 30x smaller than the values previously report...Show More

Micro-Tesla Offset in Thermally Stable AlGaN/GaN 2DEG Hall Plates Using Current Spinning

Karen M. Dowling;Hannah S. Alpert;Ananth Saran Yalamarthy*;Peter F. Satterthwaite;Sai Kumar;Helmut Köck;Udo Ausserlechner;Debbie G. Senesky

Year: 2019 | Volume: 3, Issue: 3 | Journal Article |

Effect of Geometry on Sensitivity and Offset of AlGaN/GaN and InAlN/GaN Hall-Effect Sensors

Hannah S. Alpert;Karen M. Dowling;Caitlin A. Chapin;Ananth Saran Yalamarthy;Savannah R. Benbrook;Helmut Köck;Udo Ausserlechner;Debbie G. Senesky

IEEE Sensors Journal
Year: 2019 | Volume: 19, Issue: 10 | Journal Article |
Cited by: Papers (25)
The effect of metal contact lengths on current- and voltage-scaled sensitivities and magnetic field offsets of octagonal AlGaN/GaN and InAlN/GaN Hall-effect sensors were examined in this work. The calculations that take into account the shape of the device show that the devices with point-like contacts have the highest current-scaled sensitivity (68.9 V/A/T), while the devices with contacts of equ...Show More

Effect of Geometry on Sensitivity and Offset of AlGaN/GaN and InAlN/GaN Hall-Effect Sensors

Hannah S. Alpert;Karen M. Dowling;Caitlin A. Chapin;Ananth Saran Yalamarthy;Savannah R. Benbrook;Helmut Köck;Udo Ausserlechner;Debbie G. Senesky

Year: 2019 | Volume: 19, Issue: 10 | Journal Article |

Suppression of Persistent Photoconductivity in AlGaN/GaN Ultraviolet Photodetectors Using In Situ Heating

Minmin Hou;Hongyun So;Ateeq J. Suria;Ananth Saran Yalamarthy;Debbie G. Senesky

IEEE Electron Device Letters
Year: 2017 | Volume: 38, Issue: 1 | Journal Article |
Cited by: Papers (71)
Photodetectors based on the AlGaN/GaN heterostructure suffer from persistent photoconductivity (PPC) in which recovery from the optical stimulus can take days. This behavior is unsuitable for many applications where reliable and consistent optical response is required. This letter presents a method for suppressing PPC in AlGaN/GaN photodetectors by employing device suspension and in situ heating. ...Show More

Suppression of Persistent Photoconductivity in AlGaN/GaN Ultraviolet Photodetectors Using In Situ Heating

Minmin Hou;Hongyun So;Ateeq J. Suria;Ananth Saran Yalamarthy;Debbie G. Senesky

Year: 2017 | Volume: 38, Issue: 1 | Journal Article |

Design of a large aperture Space-based Proton and Electron Energy Detector as payload of IITMSAT

Athreya Shankar;Ananth Saran Yalamarthy;Tirth Shah;Varun Kelkar;Abhishikth Mallampalli;A Amit Vikram;Rewanth Ravindran;Harishankar Ramachandran;David Koilpillai

2015 International Conference on Space Science and Communication (IconSpace)
Year: 2015 | Conference Paper |
IITMSAT is a student satellite being developed with a mission to measure charged particle energies and fluxes, and to study the precipitation of these particles from the Van Allen radiation belts. The Space-based Proton Electron Energy Detector (SPEED) is the payload detector aboard IITMSAT which is designed to carry out the mission of charge particle detection and energy measurement in low earth ...Show More

Design of a large aperture Space-based Proton and Electron Energy Detector as payload of IITMSAT

Athreya Shankar;Ananth Saran Yalamarthy;Tirth Shah;Varun Kelkar;Abhishikth Mallampalli;A Amit Vikram;Rewanth Ravindran;Harishankar Ramachandran;David Koilpillai

Year: 2015 | Conference Paper |

Correction to “Stable Operation of AlGaN/GaN HEMTs for 25 Hours at 400°C in Air”

Saleh Kargarrazi;Ananth Saran Yalamarthy;Peter F. Satterthwaite;Scott William Blankenberg;Caitlin Chapin;Debbie G. Senesky

IEEE Journal of the Electron Devices Society
Year: 2020 | Volume: 8 | Journal Article |
In the referenced paper [1], the micro-photograph shown in Fig. 1 (b) is of a representative HEMT. The measured HEMT of the paper has the following dimensions: ( ${\mathrm {LG}} =5\mu {\mathrm{ m}}, {\mathrm {W}} = 20\mu {\mathrm{ m}}, {\mathrm {LGS}} = {\mathrm {LGD}} = 6\mu {\mathrm{ m}}$ ). Fig. 1 has to be replaced with the corrected figure shown below:Show More

Correction to “Stable Operation of AlGaN/GaN HEMTs for 25 Hours at 400°C in Air”

Saleh Kargarrazi;Ananth Saran Yalamarthy;Peter F. Satterthwaite;Scott William Blankenberg;Caitlin Chapin;Debbie G. Senesky

Year: 2020 | Volume: 8 | Journal Article |

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