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Hassan Kirou - IEEE Xplore Author Profile

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CuSbSe2 belongs to the Copper antimony chalcogenides CuSbCh2(Ch=S,Se). An emerging family of absorbers studied for thin-film solar cells. CuSbSe2 thin films have been prepared by electrodeposition in one-step followed by the annealing process in tubular furnace at 300°C for 5min under N2 atmosphere. The reduction potentials region was determined by cyclic voltammetry and linear sweep voltammetry. ...Show More
This work reports on the structural, morphological and optical properties of Cu2ZnSnS4 (CZTS) thin films grown by co-electrodeposition of different Cu, Sn and Zn elements using linear sweep voltammetry and cyclic voltammetry techniques. The obtained films were sulfurized in N2 atmosphere at 550°C for 1h. SEM analysis shows a very dense and uniform surface with large particles. X-ray diffraction pa...Show More
By using a linear sweep voltammetry technique, ZnO nanostructured thin films with average diameter of less than 100 nm were synthesized from nitrate aqueous solution on FTO substrate. The effects of electrodeposition parameters such as sweep rate and number of scans were investigated by scanning electron microscopy (SEM), X-ray diffraction and ultraviolet visible transmission spectroscopy. The dep...Show More
Binary In2S3 thin films were prepared by chemical bath deposition (CBD) using an aqueous solution containing low concentration of InCl3 (0.01 M), thioacetamide (TA) and citric acid as complexing agent. The effect of annealing under sulphur atmosphere on the structural, morphological and optical properties of these films was investigated. X-ray diffraction characterizations reveal that the as-depos...Show More
A theoretical analysis of double-graded bandgap Cu(In,Ga)Se2 solar cell for the simulation of the photocurrent has been developed. The photocurrent density as a function of front and back bandgaps and electron diffusion length has been calculated. Therefore, based on these concepts, optimum back bandgap is around 1.4 eV, assuming the band-gap grading in the space charge region and near the back su...Show More
In this paper, we report on Zinc oxide (ZnO) thin films grown by means of simple and cost effective method: Successive Ionic Layer Adsorption and Reaction (SILAR). All the depositions were performed on cheap glass substrates at room temperature. Annealing temperatures and film thickness effect on the structural, morphological and optical properties of the films were investigated. The as-deposited ...Show More
In this study we present our first results concerning the preparation of CZTS thin films using simple and cost effective wet processes on Ti, ITO coated glass and soda lime glass. Cyclic voltammetry and chronoamperometry were used to investigate the mechanism deposition of the films. Structural and optical properties of the deposited films were investigated. The main characteristics of the films w...Show More
In this paper we present the simulation study of the ZnO/CdS/CuIn(1−x)GaxSe2/CuIn0.7Ga0.3Se2 cell structure which is consisted of an alternative absorber layers CuIn(1−x)GaxSe2 and CuIn0.7Ga0.3Se2, and cadmium sulfide (CdS) as the n-type buffer layer with an intrinsic zinc oxide (ZnO) as the window layer. The one-dimensional Analysis of Microelectronic and Photonic Structure (AMPS-1D) simulator is...Show More