Contents I. Introduction
Quantum-dot or -dash based semiconductor mode-locked lasers offer a promising solution for optical communications and signal processing with many unique advantages over quantum well and bulk semiconductor materials [1]. Compared to their QDash counterparts, it has been suggested that QDots are favorable for lasers as the improved height-diameter aspect ratio provides a deeper confinement of the charge carriers. QDot lasers have been shown to exhibit larger values of direct modulation bandwidth and relaxation oscillation frequency induced by the fast carrier capture from the wetting layer to the dots [1].
