Investigations on the Effect of Spacer Dielectrics on the DC Characteristics of Dual Material Gate Junctionless FinFETs

This work analyses the influence of dielectric constant of spacer on the electrical characteristics as well as on two vital short channel effect parameters i.e DIBL and Subthreshold Swing of Dual Material Gate Junctionless FinFET (DMG-JLFinFET). Various spacer materials each with different dielectric constant, were used for 3D TCAD simulations. It was observed that high κ spacers gave higher value of ON current. Increase in leakage current was also observed for high κ spacers at higher negative gate bias. Subthreshold Swing (SS) as well as Drain Induced Barrier Lowering (DIBL) had reduced extensively with the increase in dielectric constant of spacer.

I. Introduction

Present day electronics doesn't fail to mesmerize mankind due to its capability in bringing out exemplary performance in all domains of life. Much of this happened due to the invention of cost-friendly and miniature gadgets which aids humans in any possible way. The major cause for bringing down the electronics world to the hands of common man is the invention of ultra-small transistors with nanometre range dimensions that could perform much better than the conventional transistors [1]. Fin Field Effect transistor (FinFET) had emerged as one successful candidate in nanometre regime [2]. But non-planar transistors pose serious fabrication challenges in ultra-low dimensions thereby hindering mass production. Junctionless FinFET has uniform doping concentration across drain, channel and source, which eases fabrication at low dimension to a great extent.