I. Introduction
With the race to millimeter-wave (mmW) fifth generation (5G) wireless technology, implementation of highly power-efficient transceivers has become an important research topic [1]–[6]. Particularly, the design of high-efficiency power amplifier (PA) for 5G mobile communications in CMOS technology is in paramount importance as it offers longer battery life and improved thermal management at a low cost in portable devices [7]–[10]. At the same time, a PA with a large bandwidth is highly desirable for 5G mobile communications as it can cover multiple-wideband channels while ensuring robust performances against process-voltage-temperature (PVT) variations [8], [10]–[17].