I. Introduction
The field of high-power drives has been one of the most active areas in research and development of power electronics in the last decades. Several industrial processes have increased their power-level needs, driven mainly by economy of scale (production levels and efficiency), triggering the development of new power semiconductors, converter topologies, and control methods. The development of high-power converters and medium-voltage (MV) drives started in the mid-1980s when 4500-V gate-turn-off (GTO) thyristors became commercially available [1]. The GTO was the standard for the MV drive until the advent of high-power insulated-gate bipolar transistors (IGBTs) and gate-commutated thyristors (GCTs) in the late 1990s [2], [3]. These switching devices are now extensively used in high-power drives due to their superior switching characteristics, reduced power losses, ease of gate control, and snubberless operation.