Formation of 0.1 µm N+/P and P+/N junctions by doped silicide technology

A new technique to form very shallow, low resistance, and high surface concentration junctions by diffusing the dopant from doped WSi2into the silicon has been developed. The junctions were formed by ion implanting WSi2films with As⁺, P⁺or B⁺which then acted as the diffusion sources. Subsequent high temperature processing simultaneously forms the junctions and ohmic contacts to the diffusion areas. N⁺/P and P⁺/N diodes with very shallow juctions have been formed by this doped silicide technology. Dopant diffusion in the WSi2and redistribution behavior in the SiO2/WSi2/Si structure with a wide range of implant doses, anneal temperatures and times have been characterized.