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Gain clamping scheme of a semiconductor optical amplifier by using an amplified spontaneous emission reflector

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Abstract:

A gain-damped semiconductor optical amplifier scheme based on an amplified spontaneous emission reflector is successfully demonstrated using a fiber Bragg grating. Gain i...Show More

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Abstract:

A gain-damped semiconductor optical amplifier scheme based on an amplified spontaneous emission reflector is successfully demonstrated using a fiber Bragg grating. Gain is clamped at 18dB up to the input signal power of -11dBm.

Published in: The 16th Annual Meeting of the IEEE Lasers and Electro-Optics Society, 2003. LEOS 2003.

Date of Conference: 27-28 October 2003

Date Added to IEEE Xplore: 08 January 2004

Print ISBN:0-7803-7888-1

Print ISSN: 1092-8081

DOI: 10.1109/LEOS.2003.1253087

Conference Location: Tucson, AZ, USA

Contents

Introduction

Gain-cramped-semiconductor. optical amplifiers (GC-SOAs) are useful for amplifiers and fast space switches for wavelength divison multiplexed (WDM) optical networks 'because of constant: gain⋅. characteristics⋅. against. input power variation Most-of GC-SOAs have been realized by adopting laser cavities in amplifier section [3] [4]. However, lasing mechanism also resulted-in high noise figure (NF). and limited switching speed due to relaxation oscillation (RO)⋅⋅.

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Gain clamping scheme of a semiconductor optical amplifier by using an amplified spontaneous emission reflector

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Gain clamping scheme of a semiconductor optical amplifier by using an amplified spontaneous emission reflector

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