Revision of the standard hydrodynamic transport model for SOI simulation

Anomalous output characteristics are observed in hydrodynamic simulations of partially depleted SOI MOSFETs. The effect that the drain current reaches a maximum and then decreases is peculiar to the hydrodynamic transport model. It is not observed in drift-diffusion simulations and its occurrence in measurements is questionable. An explanation of the cause of this effect is given and a solution is proposed by modifying the hydrodynamic transport model.

I. Introduction

Using the standard hydrodynamic (HD) transport model for simulation of partially depleted SOI MOSFETs, an anomalous decrease of the drain current with increasing drain–source voltage has been observed (Fig. 1). Fig. 1. Output characteristics obtained by standard DD and HD simulations verified by using two different device simulators. Fig. 2. Electron concentration in an SOI MOSFET obtained by HD and MC simulations.