I. Introduction
Near- field scanning technique is used to visualize, identify and characterize the noise sources present inside an electric device [1]. As the devices are becoming increasingly integrated, the size of a H - field probe is minimized to improve its spatial resolution. The sensitivity of the probes is then sacrificed [2]. Probes with structural resonance are then developed to increase the sensitivity of measurements. However, the operation bandwidth of resonant probes is typically limited to dozens of MHz [3]. Multiple probes are required to cover the bandwidth of communication networks, e.g., the 900MHz-band GSM [4]. Active-tuning method is deployed in probes so that the center-frequency and bandwidth of the probes are configurable. However, the circuits are complicated and can introduce extra noise in the measurement [5]. A resonant probe with a wider bandwidth is desired to simplify and accelerate the near-field measurement.