Abstract:
Analyzing experimental boron transient diffusion profiles in Si MOSFETs over a wide temperature range with the process simulator TESIM, we evaluated the related transient...Show MoreMetadata
Abstract:
Analyzing experimental boron transient diffusion profiles in Si MOSFETs over a wide temperature range with the process simulator TESIM, we evaluated the related transient diffusion time t/sub E/, enhanced diffusivity D/sub enh/, and maximum transient diffusion concentration C/sub enh/. Our extracted values contradict previously reported values, but it is due to the fact that the former works neglected the ramp-up period. We show that considering the ramp-up period is indispensable for the analysis of transient diffusion. We also developed analytical models for t/sub E/, D/sub enh/, and C/sub enh/, and clarified their dependence on physical parameters implemented in TESIM.
Published in: International Electron Devices Meeting. Technical Digest
Date of Conference: 08-11 December 1996
Date Added to IEEE Xplore: 06 August 2002
Print ISBN:0-7803-3393-4
Print ISSN: 0163-1918
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