Showing 1-25 of 1,023 resultsfor "Index Terms":high power amplifier (HPA)
"Index Terms":high power amplifier (HPA)
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2.5 to 10.0 GHz Band-Pass Non-Uniform Distributed GaN MMIC HPA
Jun Kamioka;Masatake Hangai;Shinichi Miwa;Yoshitaka Kamo;Shintaro Shinjo
2020 IEEE/MTT-S International Microwave Symposium (IMS)
Year: 2020 | Conference Paper |
This paper reports on a wideband Gallium Nitride (GaN) Monolithic Microwave Integrated Circuit (MMIC) high power amplifiers (HPAs) operated in S to X bands. Two band-pass non-uniform distributed power amplifiers (NDPAs) are designed to obtain wideband and high power characteristics. One is a single-ended HPA which demonstrates output power of 17 to 26 W, power added efficiency (PAE) of 24 to...Show More
Lossless feedback amplifier design
2005 IEEE International Wkshp on Radio-Frequency Integration Technology: Integrated Circuits for Wideband Comm & Wireless Sensor Networks
Year: 2005 | Conference Paper |
Cited by: Papers (1)
Lossless feedback can be applied to three types of microwave amplifiers: (1) high gain amplifiers (HGA) Mason 1954 (2) low noise amplifiers (LNA) Vendelin 1975 and (3) high power amplifiers (HPA). The LNA and HPA are duals of each other. This paper gives a tutorial review of all three feedback amplifiers.Show More
A 9-10 GHz High-Efficiency GaN HEMT High Power Amplifier MMIC
2024 International Applied Computational Electromagnetics Society Symposium (ACES-China)
Year: 2024 | Conference Paper |
This paper presents a 9-10 GHz high-efficiency, and high-gain three-stage high power amplifier (HPA) monolithic microwave integrated circuit (MMIC) based on 0.25-µm gallium nitride (GaN) high-electron mobility transistor (HEMT) process. The input and output impedances of the MMIC are both designed to match 50 ohms. Post EM simulation results show that this MMIC achieves a gain of more than 3...Show More
High Efficiency Ku-Band 13 W GaN HEMT HPA
2022 IEEE MTT-S International Wireless Symposium (IWS)
Year: 2022 | Conference Paper |
Cited by: Papers (15)
This paper reports on a Ku-band high-power amplifier (HPA) monolithic microwave integrated circuit (MMIC) on 150-nm GaN-SiC high electron mobility transistor (HEMT) process, which exhibits high output power (13 W Psat) and high efficiency (45 % peak PAE) under pulse simulation with 100 \mu\mathrm{s} period and 10 % duty cycle. By employing wideband matching networks (MNs), the proposed ...Show More
A Spectrally pure 5.0 W, High PAE, (6-12 GHz) GaN Monolithic Class E Power Amplifier for Advanced T/R Modules
2007 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium
Year: 2007 | Conference Paper |
Cited by: Papers (14)
This paper introduces a new highly efficient broadband monolithic class-E power amplifier utilizing a single 0.25 um times 800 um AlGaN/GaN field-plated HEMT producing 8 W/mm of power at 10.0 GHz. The HPA utilizes a novel distributed broadband class-E load topology to maintain a simultaneous high PAE and output Power over (6-12 GHz). The HPA's peak PAE and output power performance meas...Show More
High Power, High Linearity and Low-Noise Hybrid RF Amplifiers Based on GaN HEMTs
Ibrahim Khalil;Matthias Rudolph;Armin Liero;Mark Neumann;Wolfgang Heinrich
This paper details the potential of GaN HEMT technology for RF high power amplifiers (HPA), low noise amplifiers (LNA) and high linearity amplifiers with practical application examples. Large GaN HEMT powerbars are measured in a 50-iquest-system at 2 GHz. Measurements show excellent characteristics in terms of power, linearity and noise. This combination of high power and low noise performan...Show More
Low cost Ka-band 7W GaAs PHEMT based HPA with GaN PHEMT equivalent performance
2015 IEEE Radio Frequency Integrated Circuits Symposium (RFIC)
Year: 2015 | Conference Paper |
Cited by: Papers (4)
This paper describes a very low cost MMIC high power amplifier (HPA) with output power of over 7W. The MMIC was fabricated using a GaAs PHEMT process with a state-of-the-art compact die area of 13.7mm2. The HPA MMIC contains a phase and amplitude compensated output power combiner and super low loss phase compensated inter-stage matching networks. A four stage amplifier demonstrated com...Show More
A Figure-of-Merit for Evaluating the Overall Performance of OFDM PAPR Reduction Techniques in the Presence of High Power Amplifier
2009 Fifth International Conference on Wireless and Mobile Communications
Year: 2009 | Conference Paper |
Cited by: Papers (1)
One of the major drawbacks of Orthogonal Frequency-Division Multiplexing (OFDM) is the large envelope fluctuations which either require an inefficient use of High Power Amplifiers (HPA) or decrease the system performance. Peak to-Average Power Ratio (PAPR) is a very well known measure of the envelope fluctuations and has become the cost function used to evaluate and design multicarrier syste...Show More
A 16 watt X-band GaN high power amplifier MMIC for phased array applications
2016 IEEE International Conference on Microwave and Millimeter Wave Technology (ICMMT)
Year: 2016 | Conference Paper |
Cited by: Papers (6)
For the next generation HPA MMIC, a 16 watts two-stage X-band GaN HPA MMIC is described in this paper. The MMIC has been designed and fabricated by using a 0.25 um GaN HEMT process. The MMIC under a drain voltage of 28 V exhibits pulsed output power of 42.1 dBm (16 watts) with an associated PAE from 37.75 % to 41.55 % over the frequency range of 8.5 ~ 10.5 GHz. The fabricated MMIC is a...Show More
Design and analysis of a 6 Watt GaN based X-band power amplifier
R. Yeshaswy;A. Pratheik;R. V. Sai Karteek;R. Sanjika Devi;Dhanesh G. Kurup
2016 International Conference on Communication and Signal Processing (ICCSP)
Year: 2016 | Conference Paper |
Cited by: Papers (12)
This paper, deals with the design of a class AB, Gallium Nitride (GaN) transistor based High Power Amplifier (HPA) for Monolithic Microwave Integrated Circuits (MMICs). GaN transistor is selected because of its rugged nature and its capability to work in extreme conditions. The designed HPA is intended to be housed in a Quad Trans-Receive Module (QTRM) of an Active Phased Array RADAR s...Show More
Direct Monitoring of RF Overstress in High-Power Transistors and Amplifiers
IEEE Electron Device Letters
Cited by: Papers (1)
Light emission from power transistors at a compression level in the range of 2-3 dB has been imaged using a microscope-mounted camera. Results show that the emitted light intensity distribution across the transistor is highly nonuniform and depends on the load impedance, direct current, and RF conditions. The light intensity correlates with a negative gate current, which is a result of the RF-indu...Show More
A novel fast HPA predistorter for high PAPR signals
2005 IEEE 16th International Symposium on Personal, Indoor and Mobile Radio Communications
Year: 2005 | Conference Paper |
Cited by: Papers (4)
The paper presents a novel computationally and memory efficient structure of an HPA predistorter based on piece-wise linear approximation of the HPA inverse characteristics. The adaptation algorithm is derived and representative simulation results are presented showing good quality of the proposed HPA predistorter and its adaptation algorithmShow More
Impact of Total Harmonic Distortion in SWIPT Enabled Wireless Communication Networks
2021 Smart Technologies, Communication and Robotics (STCR)
Year: 2021 | Conference Paper |
Cited by: Papers (5)
In this article, the impact of high power amplifier non-linearity namely harmonic distortion in simultaneous wireless information and power transfer (SWIPT) power splitting system (PS) is analyzed. Here the SWIPT transmitter with a high power amplifier follows IQ modulation and the receiver is equipped with a power splitting architecture. The harvested energy and signal to noise ratio (SNR) with a...Show More
Spectrum Analysis of OFDM-Based Communication Systems with Nonlinear High Power Amplifier
2010 International Conference on Communications and Mobile Computing
Year: 2010 | Conference Paper |
Cited by: Papers (1)
In RF communication design and analysis, the nonlinear effects of high power amplifier (HPA) are critical. But its AM/PM distortion is usually ignored in existing literatures for simplicity. The AM/AM and AM/PM characteristics of HPA are modeled by the power series expansion, and the theoretical expressions of out-band emission levels are derived in this paper. The predicted power spec...Show More
Peak-to-Average Power Ratio Reduction of OFDM Signals With Nonlinear Companding Scheme
Companding transform is a simple and efficient method in reducing the Peak-to-Average Power Ratio (PAPR) of Orthogonal Frequency Division Multiplexing (OFDM) systems. In this paper, a novel nonlinear companding scheme is proposed to reduce the PAPR and improve Bit Error Rate (BER) for OFDM systems. This proposed scheme mainly focuses on compressing the large signals, while maintaining the average ...Show More
An 8.8–9.8 GHz 100W hybrid solid state power amplifier for high power applications
2014 22nd Iranian Conference on Electrical Engineering (ICEE)
Year: 2014 | Conference Paper |
Cited by: Papers (3)
This paper presents an 8.8-9.8 GHz hybrid power amplifier (PA) designed with GaN HEMT bare die transistors. Generally, hybrid X-band high power amplifier (HPA) suffers from relatively low bandwidth. However, this paper introduces wideband high gain power amplifier, by using low loss Wilkinson combiner/divider, a modified form of taper-based divider, and wideband matching structures. The opti...Show More
A Highly Efficient Broadband (7-14 GHz) Monolithic Class E Power Amplifier for Space Based Radar
2007 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium
Year: 2007 | Conference Paper |
Cited by: Papers (8)
This paper describes the design and fabrication of a highly efficient broadband monolithic class-E power amplifier utilizing a new distributed class-E load topology. The amplifier maintains a simultaneous high PAE and output Power over 7.0 GHz of bandwidth. The HPA's measured performance shows a PAE range of (50 % to 82 %) and an output power of >25 dBm across 7-14 GHz. The new broadband loa...Show More
A C-Band AlGaN-GaN MMIC HPA for SAR
Corrado Florian;Rafael Cignani;Daniel Niessen;Alberto Santarelli
A C-Band MMIC high power amplifier (HPA) has been designed exploiting a 0.25 μm HEMT GaN process on SiC substrate. The HPA is designed for future synthetic aperture radar (SAR) antenna applications. The HPA delivers 16 W output power with PAE over 38% at 6 dB gain compression within a 900 MHz bandwidth around 5.75 GHz. Up to 20 W output power and 40% PAE are obtained at higher ga...Show More
This work presents the design of a high power amplifier circuit for the X band application having frequency of operation from 9.75 GHz to 11 GHz. Operating frequency range has been selected according to the input return loss (|S(1, 1)|) and output return loss (|S(2, 2)|) value and it is always larger than 12 dB for this work. In addition, insertion loss |S(1, 2)| is always larger than 29.41 dB for...Show More
High power S-band GaN-based power amplifier for radar systems
2015 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP)
Year: 2015 | Conference Paper |
Cited by: Papers (3)
One S-band high-power GaN-based power amplifier (PA) is investigated. The design of the multi-stage PA and the biasing circuit are investigated seperately, including the two stages of power amplifiers which delivers about 50dBm of saturated output power in class AB from 2.7 to 2.9 GHz and the bias control channel which provides special bias and power sequencing for GaN HEMTs. Overall circuits oper...Show More
Millimeter-wave phase combined TWT driver amplifier
2016 IEEE International Vacuum Electronics Conference (IVEC)
Year: 2016 | Conference Paper |
Linearizer Technology Inc. (LTI) has developed a phase combined compact driver amplifier for millimeter-wave applications. It has a single input, and dual outputs that have individual phase shift and amplitude adjustments to drive a pair of TWT's or other high power amplifiers (HPAs). This dual output driver can also provide linearization if required.Show More
A New Scheme to Mitigate the OFDM High PAR Problem by Minimizing the Signal's Nonlinear Distortion Caused by HPA
IEEE Transactions on Broadcasting
Cited by: Papers (3)
How to mitigate the negative impact of high PAR in OFDM systems is an important issue. Most of recent works have focused on minimizing the PAR of OFDM signal to enhance performance. However, after relating this issue with the specific characteristics of HPA, we propose a new scheme to mitigate the high PAR problem. Rather than minimizing OFDM signal's PAR, the new scheme uses the amount of O...Show More
Ku-band GaAs MMIC high power amplifier with high efficiency and broadband
2015 Conference on Microwave Techniques (COMITE)
Year: 2015 | Conference Paper |
Cited by: Papers (8)
In this paper, we present the GaAs PHEMT monolithic microwave integrated circuit (MMIC) high-power amplifier (HPA) with high efficiency and broadband. The HPA delivers 36 ~ 37dBm (4~5W) saturated output power with 28 ~ 31% power added efficiency (PAE) in the frequency band of 12 to 16 GHz, while providing 26~31 dB of small-signal gain and more than 42 dBm of output third-order intercep...Show More
A combined adaptive predistortion scheme with Input Back-off
2009 MIXDES-16th International Conference Mixed Design of Integrated Circuits & Systems
Year: 2009 | Conference Paper |
In this paper we propose a simple improvement for an adaptive baseband predistortion without memory driven with QAM signals. We combine a predistortion technique and Input Back-off term. The computer simulation confirms that for the case of QAM modulation amplified with High Power Amplifier a performance was improved. The case of 64-QAM transmission over a radio communications link is studied in d...Show More
A 17.5~ 20.5 GHz 30 W GaN HPA MMIC for Ka-band Satellite Communications
2022 27th Asia Pacific Conference on Communications (APCC)
Year: 2022 | Conference Paper |
Cited by: Papers (1)
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