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Total-Ionizing-Dose Effects and Low-Frequency Noise in N-Type Carbon Nanotube Field-Effect Transistors With HfO₂ Gate Dielectrics
Patrick K. Darmawi-Iskandar;Andrew M. Aaron;En Xia Zhang;Bharat L. Bhuva;Jeffery S. Kauppila;Jim L. Davidson;Michael L. Alles;Daniel M. Fleetwood;Lloyd W. Massengill
Total ionizing dose (TID) irradiation and low-frequency noise characterization are performed on carbon nanotube field-effect transistors (CNTFETs). Large hysteresis due to high border-trap densities is observed in as-processed and irradiated devices. TID irradiation also leads to significant radiation-induced charge trapping in the surrounding dielectrics resulting in parametric degradation. Perco...Show More
Natural Convection Heat Transfer Enhancement using Functionalized Nanodiamonds in Transformer Oil
Vinit V. Prabhu;Ethan Languri;Jim L. Davidson;David Kerns;Lino Costa;Glenn Wilson
2022 21st IEEE Intersociety Conference on Thermal and Thermomechanical Phenomena in Electronic Systems (iTherm)
Year: 2022 | Conference Paper |
Efficient transformer cooling is an important factor in increasing the lifetime of transformer and reducing the associated maintenance costs. It has been reported that the lifetime of the transformer is increased by 10% with 1 °C decrease in the core temperature. The transformer oil which is a typically a mineral oil, used commonly in cooling of transformers has an inherent disadvantage of low the...Show More
Effects of Ion-Induced Displacement Damage on GaN/AlN MEMS Resonators
Wen Sui;Xu-Qian Zheng;Ji-Tzuoh Lin;Jaesung Lee;Jim L. Davidson;Robert A. Reed;Ronald D. Schrimpf;Bruce W. Alphenaar;Michael L. Alles;Philip X.-L. Feng
Gallium nitride (GaN) has attracted great attention as a structural material for advanced microelectromechanical systems (MEMS), thanks to its excellent ensemble of electrical and mechanical properties. Here, we report on studying the effects of ion radiation-induced displacement damage on resonant MEMS made of GaN film grown on aluminum nitride (AlN) buffer layer. We design and fabricate GaN/AlN ...Show More
Effects of Charge Generation and Trapping on the X-ray Response of Strained AlGaN/GaN HEMTs
Peng Wang;En Xia Zhang;Daniel M. Fleetwood;Peng Fei Wang;Michael W. McCurdy;Ji-Tzouh Lin;Michael L. Alles;Jim L. Davidson;Bruce W. Alphenaar;Ronald D. Schrimpf
2021 IEEE 14th International Conference on ASIC (ASICON)
Year: 2021 | Conference Paper |
Cited by: Papers (1)
The piezoelectric properties of GaN enable it to sense mechanical strain. Effects of mechanical strain on device electrical response have been investigated in AlGaN/GaN HEMTs irradiated with ~10-keV X-rays. Radiation-induced charge trapping in these GaN-based HEMTs is attributed to fast-annealing donor-like defects, which are most likely ON impurities. Similar defects lead to threshold-voltage shi...Show More
Experimental Evaluation of Dielectric Oil Functionalized Nanodiamond Suspension Under Laminar Flow Regime
Aaron Bain;Ethan Languri;Jim Davidson;David Kerns;Lino Costa
2020 19th IEEE Intersociety Conference on Thermal and Thermomechanical Phenomena in Electronic Systems (ITherm)
Year: 2020 | Conference Paper |
Cited by: Papers (1)
Dielectric oils serve as the primary means of cooling in electric power utility operations. However, beyond the recent advancements in improving the electrically insulating properties, relatively little has been done to optimize the thermal properties of these fluids for their application. Nanoparticle-based fluid suspensions show interesting potential for innovation in enhancing the cooling abili...Show More
Impact of X-Ray Radiation on GaN/AlN MEMS Structure and GaN HEMT Gauge Factor Response
Ji-Tzuoh Lin;Peng Wang;Pranoy Shuvra;Shamus McNamara;Mike McCurdy;Jim Davidson;Kevin Walsh;Mike Alles;Bruce Alphenaar
2020 IEEE 33rd International Conference on Micro Electro Mechanical Systems (MEMS)
Year: 2020 | Conference Paper |
Cited by: Papers (5)
We present electrical measurements of gallium nitride/Aluminum nitride (GaN/AlN) microelectromechanical system (MEMS) beams under the combined influence of strain and X-ray radiation. These results are used to understand the mechanism for the observed piezoresistive gauge factor in GaN devices. Exposure with X-ray radiation decreases the electrical resistance while strongly suppressing the gauge f...Show More
Particulate Functionalized Nanodiamond as a Low Concentration Additive to Liquid Systems to Enhance Their Thermal Extraction Capability
Farzin Mashali;Ethan M. Languri;Jim Davidson;David Kerns;Blake Branson;Wayne Johnson;Lino Costa;Kathleen Lansford
2019 18th IEEE Intersociety Conference on Thermal and Thermomechanical Phenomena in Electronic Systems (ITherm)
Year: 2019 | Conference Paper |
Cited by: Papers (1)
Due to the inherently poor thermal conductivity of conventional heat transfer fluids such as water, ethylene glycol, mineral oils and their mixtures, they are substantially compromised in thermal management applications. In this paper, particulate deaggregated and functionalized nanodiamond (“detonation” nanodiamond), fND, is examined as a low concentration additive to traditional heat transfer fl...Show More
Dopant-Type and Concentration Dependence of Total-Ionizing-Dose Response in Piezoresistive Micromachined Cantilevers
Charles N. Arutt;Pranoy Deb Shuvra;Ji-Tzuoh Lin;Michael L. Alles;Bruce W. Alphenaar;Jim L. Davidson;Kevin M. Walsh;Shamus Mcnamara;Daniel M. Fleetwood;Ronald D. Schrimpf
Lighter doping, pretreatment (exposure to hydrogen in a steam bath), and lower dose rate are each found to exacerbate 10-keV X-ray-induced negative frequency shifts and increase in resistivity measured in T-shaped, asymmetric, piezoresistive, micromachined, and resonating cantilevers. All devices recover to levels close to preirradiation after several hours of postirradiation annealing. The effect...Show More
Dose-Rate Effects on the Total-Ionizing-Dose Response of Piezoresistive Micromachined Cantilevers
Charles N. Arutt;Wenjun Liao;Huiqi Gong;Pranoy Deb Shuvra;Ji-Tzuoh Lin;Michael L. Alles;Bruce W. Alphenaar;Jim L. Davidson;Kevin M. Walsh;Shamus McNamara;En Xia Zhang;Andrew L. Sternberg;Daniel M. Fleetwood;Robert A. Reed;Ronald D. Schrimpf
Total-ionizing-dose-induced resonance frequency shifts in piezoresistive micromachined cantilevers are experimentally shown to be dose-rate dependent. Devices were irradiated to 1 Mrad(SiO2) at rates from 5.4 to 30.3 krad(SiO2)/min, with lower rate exposures producing up to four-times more negative frequency shifts than higher rate exposures. Devices that were hydrogenated in a steam bath for 1 h ...Show More
Dose-Rate Effects on the Total-Ionizing-Dose Response of Piezoresistive Micromachined Cantilevers
Charles N. Arutt;Wenjun Liao;Huiqi Gong;Pranoy Deb Shuvra;Ji-Tzuoh Lin;Michael L. Alles;Bruce W. Alphenaar;Jim L. Davidson;Kevin M. Walsh;Shamus McNamara;En Xia Zhang;Andrew L. Sternberg;Daniel M. Fleetwood;Robert A. Reed;Ronald D. Schrimpf
Proton-Induced Displacement Damage and Total-Ionizing-Dose Effects on Silicon-Based MEMS Resonators
Huiqi Gong;Wenjun Liao;En Xia Zhang;Andrew L. Sternberg;Michael W. McCurdy;Jim L. Davidson;Robert A. Reed;Daniel M. Fleetwood;Ronald D. Schrimpf;Pranoy Deb Shuvra;Ji-Tzuoh Lin;Shamus McNamara;Kevin M. Walsh;Bruce W. Alphenaar;Michael L. Alles
The response of silicon-based microelectromechanical systems resonators to proton irradiation is determined by the combined effects of displacement damage and total ionizing dose (TID). Displacement damage (DD) can lead to carrier removal, which tends to decrease the carrier concentration, and TID leads to dopant activation and/or surface charging effects, which tend to increase the carrier concen...Show More
Proton-Induced Displacement Damage and Total-Ionizing-Dose Effects on Silicon-Based MEMS Resonators
Huiqi Gong;Wenjun Liao;En Xia Zhang;Andrew L. Sternberg;Michael W. McCurdy;Jim L. Davidson;Robert A. Reed;Daniel M. Fleetwood;Ronald D. Schrimpf;Pranoy Deb Shuvra;Ji-Tzuoh Lin;Shamus McNamara;Kevin M. Walsh;Bruce W. Alphenaar;Michael L. Alles
Total-Ionizing-Dose Effects in Piezoresistive Micromachined Cantilevers
Huiqi Gong;Wenjun Liao;En Xia Zhang;Andrew L. Sternberg;Michael W. McCurdy;Jim L. Davidson;Robert A. Reed;Daniel M. Fleetwood;Ronald D. Schrimpf;Pranoy Deb Shuvra;Ji-Tzuoh Lin;Shamus McNamara;Kevin M. Walsh;Bruce W. Alphenaar;Michael L. Alles
We evaluate the response of T-shaped, asymmetric, piezoresistive, micromachined cantilevers fabricated on p-type Si to 10-keV X-ray irradiation. The resonant frequency decreases by 25 ppm at 2.1 Mrad(SiO2), and partially recovers during post-irradiation annealing. An explanation of the results is proposed that is based on radiation-induced acceptor depassivation. This occurs because radiation-gene...Show More
Total-Ionizing-Dose Effects in Piezoresistive Micromachined Cantilevers
Huiqi Gong;Wenjun Liao;En Xia Zhang;Andrew L. Sternberg;Michael W. McCurdy;Jim L. Davidson;Robert A. Reed;Daniel M. Fleetwood;Ronald D. Schrimpf;Pranoy Deb Shuvra;Ji-Tzuoh Lin;Shamus McNamara;Kevin M. Walsh;Bruce W. Alphenaar;Michael L. Alles
Energy storage utilizing advanced CVD nanodiamond technology
Stephen E. Minden;John Fraley;Lauren Kegley;Jim Davidson;David Kerns
2015 IEEE International Workshop on Integrated Power Packaging (IWIPP)
Year: 2015 | Conference Paper |
Advanced chemical vapor deposition (CVD) nanodiamond films are being explored as a new dielectric for high voltage, high energy density capacitors, capable of operating at temperatures greater than 200 °C. CVD diamond is considered to be a superior dielectric material for advanced capacitor technology, based on its extraordinary electrical and mechanical characteristics. Specifically, diamond has ...Show More
Nanodiamond Vacuum Field Emission Integrated Differential Amplifier
Shao-Hua Hsu;Weng Poo Kang;Jimmy L. Davidson;Jin H. Huang;David V. Kerns
The development of a novel vacuum differential amplifier (diff-amp) array employing vertically configured nanodiamond (ND) vacuum field emission transistors (ND-VFETs) on a single chip is presented. The diff-amp array is composed of a common ND emitter array integrated with partition gates and split anodes. An identical pair of ND-VFETs with well-matched field emission transistor characteristics w...Show More
Biosensors for detecting/measuring/monitoring the concentration of neurotransmitters that vary at sub-second time-scale can be achieved by using an electrode with high temporal resolution and fast electron transfer kinetics. Neurotransmitters, such as dopamine, undergo rapid fluctuations in concentrations occurring at a sub-second time scale. Real-time monitoring and measurement of these concentra...Show More
Nanodiamond vacuum field emission triode signal amplifier
25th International Vacuum Nanoelectronics Conference
Year: 2012 | Conference Paper |
Cited by: Papers (1)
This paper presents the triode behavior of a gated nanodiamond vacuum field emitter array and its application in signal amplification. The triode feature is demonstrated with the observation of gate modulation on the emission current induced by the anode field. The emission characteristics are studied by considering the resultant electrical field on emitters, confirming the gate modulation effect....Show More
Vacuum field emission integrated differential amplifier
S. H. Hsu;W. P. Kang;S. Raina;J. L. Davidson;J. H. Huang;D. V. Kerns
25th International Vacuum Nanoelectronics Conference
Year: 2012 | Conference Paper |
Cited by: Papers (1)
This paper reports the development of an integrated vacuum field emission transistor differential amplifier (diff-amp) utilizing nanodiamond emitters. The device was fabricated by a dual-mask self-aligned mold transfer technique using standard silicon microfabrication technique in conjunction with chemical vapor deposited nanodiamond. The emission current of the transistor pair was validated by th...Show More
Nanodiamond vacuum field emission integrated devices
W. P. Kang;S. H. Hsu;N. Ghosh;J. L. Davidson;J. H. Huang;D. V. Kerns
25th International Vacuum Nanoelectronics Conference
Year: 2012 | Conference Paper |
Cited by: Papers (1)
The superb material properties of nanocrystalline diamond (nanodiamond) materials coupled with practical chemical vapor deposition (CVD) processing of deposited nitrogen-incorporated nanodiamond on variety of substrates, have promoted further interest in the use of these diamond-derived materials as electron field emitters. Experimentally, nanodiamond emitters have been observed to emit electrons ...Show More
10.3: Nanodiamond vacuum field emission transistor arrays
International Vacuum Nanoelectronics Conference
Year: 2010 | Conference Paper |
A vertically configured nanodiamond vacuum field emission transistor (VFET) is developed. The device is fabricated on a silicon-on-insulator (SOI) substrate, using the active silicon layer patterned with inverted pyramidal mold for nanodiamond deposition and as the self-aligned gate of the final VFET construct. Gate modulation of the emission current is observed with a relatively low gate turn-on ...Show More
9.5: Resonant tunneling and extreme brightness from diamond field emitters and carbon nanotubes
Jonathan D. Jarvis;Nikkon Ghosh;Niels de Jonge;Erwin C. Heeres;Borislav Ivanov;Weng P. Kang;Jimmy L. Davidson;Charles A. Brau
We report new results from field emission microscopy studies of multi-wall carbon nanotubes and from energy-spectrum measurements of beams from diamond field emitters. In both systems, we find that resonant tunneling through adsorbed species on the emitter surface is an important and sometimes dominant effect. For diamond emitters our observations include order of magnitude emission enhancement wi...Show More
9.4: The effect of ballast resistor and field screening on electron emission of nano-diamond emitters fabricated on micropatterned silicon pillar arrays
International Vacuum Nanoelectronics Conference
Year: 2010 | Conference Paper |
This paper describes the influence of ballast resistor and field screening on the electron field emission behavior of nano-diamond emitter arrays fabricated on micropatterned silicon pillars. Arrays of 50 × 50 silicon pillars with different ballast resistances, pillar separations, capped with nano-diamond, have been fabricated on different silicon substrates as cathode for field emission testing. ...Show More
A MEMS dosimeter comprising diamond for very high neutron fluence
J. L. Davidson;W. P. Kang;P. K. Basu;Andrew G. Holmes-Siedle;K. F. Galloway
2009 European Conference on Radiation and Its Effects on Components and Systems
Year: 2009 | Conference Paper |
Cited by: Papers (1)
The construct and modeled performance of a bi-layer cantilever beam type device which can serve as a dosimeter for very high neutron fluence environments such as nuclear or fusion applications is described. A layer of material such as molybdenum is fabricated integral to a microelectronics scaled CVD diamond cantilever beam such that, as it is irradiated, the layer swells in a predictable manner d...Show More
Nanodiamond macro- and microelectrode array bio-sensor
SENSORS, 2009 IEEE
Year: 2009 | Conference Paper |
A thin-film nanodiamond macro-electrode and a microelectrode array (MEA) with SiO2 film as the insulator, both on a highly doped silicon substrate were fabricated for biosensing applications. Fe(CN)3-/4- 6 redox couple is used for electrochemical characterization of the MEA using cyclic voltammetry, which gives a sigmoidal response consistent with hemispherical diffusion limited mass transport mec...Show More
Development of carbon-derived vacuum micro- and nano-electronic devices
2009 22nd International Vacuum Nanoelectronics Conference
Year: 2009 | Conference Paper |
In this work, nanocarbon-derived vacuum electronic devices, viz., the nanodiamond lateral triodes and transistors and the CNT integrated differential amplifiers are examined. The material properties, device structure and fabrication process, and the electrical performance of these devices are presented.Show More
Nano-diamond ridge structure emission arrays capped on micro-patterned silicon pillars
2009 22nd International Vacuum Nanoelectronics Conference
Year: 2009 | Conference Paper |
CVD nano-diamond structures are interesting electron emitters because of their superior electronic properties and tolerance to operate at much higher temperatures and harsh environments. Other advantages of nano-diamond as emitters include chemical and electrical stability, high breakdown voltage, low turn-on electric field and excellent thermal conductivity. In this paper, the authors report the ...Show More
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