Showing 1-25 of 9,596 resultsfor "Index Terms":Passivation
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Effect of Deposition Temperature of SiOx Passivation Layer on the Electrical Performance of a-IGZO TFTs
We investigated the effect of the deposition temperature on the electrical performance of SiOx passivation layers for amorphous indium-gallium-zinc-oxide thin-film transistors (a-IGZO TFTs). Compared to the time-of-flight secondary ion mass spectroscopy depth profile of the IGZO film with a SiOx passivation layer deposited at low temperature (150oC ), that with the SiOx film formed at 300oC exhibi...Show More
Mechanism of Increased High-Frequency Channel Noise With PECVD SiN Passivation in AlGaN/GaN HEMTs
IEEE Electron Device Letters
Cited by: Papers (8)
The effect of SiN surface passivation on high-frequency channel noise in AlGaN/GaN high-electron-mobility transistors on a high-resistivity Si substrate is investigated. It was observed that the channel noise increased after SiN surface passivation by plasma-enhanced chemical vapor deposition. The mean square of the channel noise voltage increased about three times at a bias of Vd = 12V and Id = 1...Show More
Surface Passivation Effect on CZT-Metal Contact
S. H. Park;J. H. Ha;Y. H. Cho;H. S. Kim;S. M. Kang;Y. K. Kim;J. K. Kim
The process of cadmium zinc telluride (CZT) surface passivation is very important to reduce the leakage current of the detector and to improve the detector performance. NH4/H2O2 solution was identified as an effective passivation agent for CZT. We fabricated a CZT planar detector and measured the detector performances before and after the NH4/H2O2 passivation. For the first time, the passivation e...Show More
Excellent surface passivation of silicon at low cost: Atomic layer deposited aluminium oxide from solar grade TMA
Fen Lin;Naomi Nandakumar;Bas Dielissen;Roger Görtzen;Bram Hoex
2013 IEEE 39th Photovoltaic Specialists Conference (PVSC)
Year: 2013 | Conference Paper |
Cited by: Papers (3)
In this work, we investigated the surface passivation performance of thermal atomic layer deposited Al2O3 films using two different grades of trimethylaluminum (TMA). All films were grown on the InPassion Lab tool from SoLayTec. We demonstrate that the surface passivation quality is not compromised by the higher impurity concentration in the cheaper solar grade TMA. Excellent passivation on both p...Show More
Effects of SiO2 passivation on AlGaN/GaN HEMT by self-consistent electro-thermal-mechanical simulation
Abijith Prakash;Raunak Kumar;Briliant Adhi Prabowo;Anumeha;Manoj Kumar;Yang Shaoming;Gene Sheu;Jung-Ruey Tsai
IEEE 2011 10th International Conference on Electronic Measurement & Instruments
Year: 2011 | Conference Paper |
Cited by: Papers (1)
We have carried out systematic experiments based on degradation mechanisms of GaN high electron mobility transistors (HEMT). The electro-thermo-mechanical properties of AlGaN/GaN are simulated for reliability testing under different temperature and bias conditions. The effect of surface passivation on undoped AlGaN/GaN HEMT is investigated using SiO2. This passivation layer can increase the electr...Show More
Excellent surface passivation of crystalline silicon by ternary AlxMg1−xOy thin films
Hyunju Lee;Takefumi Kamioka;Dongyan Zhang;Naotaka Iwata;Yoshio Ohshita
2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC)
Year: 2016 | Conference Paper |
A new class of passivation material, ternary AlxMg1-xOy is developed and its surface passivation and interface properties on silicon surfaces are investigated in this study. Super-cycle plasma-enhanced atomic layer deposition is employed to fabricate AlxMg1-xOy thin films and can effectively engineer physical properties of the thin films. Our study also shows that the developed AlxMg1-xOy can prov...Show More
Surface Passivation Applicable to InAsSb/GaSb Photodiodes for Infrared Detection
In this paper the influence of various anodisation solutions on the surface passivation of InAsSb/GaSb photodiodes is examined. The diode structure is based on a design reported by Bubulac et al. [1]. The diode consists of a p-i-n structure grown by MOCVD and nearly lattice matched to a GaSb substrate. The structure, p-InAs1-xSbx/n-InAs1-xSbx/n-GaSb (x = 0.10 in both cases), consisted of a Zn-dope...Show More
Field-effect passivation by charge injection into SiNx using a novel low-cost plasma charging method
Eunhwan Cho;Young-Woo Ok;James Hwang;Ajay D. Upadhyaya;John Keith Tate;Francesco Zimbardi;A. Rohatgi
2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC)
Year: 2016 | Conference Paper |
Cited by: Papers (4)
Al2O3 film with SiNx capping layer is widely used for rear side passivation of p-type PERC cells and passivation of p+ emitter in n-PERT cells because of very effective field-induced passivation by high density of negative charge in Al2O3 (5e12~1e13cm-2). This paper reports on a promising field-effect passivation by charge injection in SiO2/SiNx stack using a novel low-cost plasma charging method ...Show More
Impact of $\hbox{Al}_{2}\hbox{O}_{3}$ Passivation Thickness in Highly Scaled GaN HEMTs
Dong Seup Lee;Oleg Laboutin;Yu Cao;Wayne Johnson;Edward Beam;Andrew Ketterson;Michael Schuette;Paul Saunier;Tomás Palacios
IEEE Electron Device Letters
Cited by: Papers (40)
This letter studies the influence of the passivation thickness on the device characteristics of InAlGaN/GaN high-electron-mobility transistors with a gate length between sub-30 and 70 nm. As the Al2O3 passivation thickness increases, the current collapse in 80-μs pulsed-I -V measurements decreases from 30% to 13%, while dc characteristics are almost unchanged with the exception of increasing drain...Show More
Effect of Al2O3 Passivation on Electrical Properties of $\beta$ -Ga2O3 Field-Effect Transistor
We report on the effect of Al2O3 surface passivation on electrical properties of beta-gallium oxide (β-Ga2O3) nanomembrane field-effect transistor (FET). The fabricated bottom-gate β -Ga2O3(100) FET exhibits enhanced channel conductance and reduced hysteresis after the conformal atomic layer deposited Al2O3 passivation investigated by high-resolution transmission electron microscope (HR-TEM) analy...Show More
Improved Microwave Noise Performance by SiN Passivation in AlGaN/GaN HEMTs on Si
Effects of silicon nitride (SiN) surface passivation by plasma enhanced chemical vapor deposition (PECVD) on microwave noise characteristics of AlGaN/GaN HEMTs on high-resistivity silicon (HR-Si) substrate have been investigated. About 25% improvement in the minimum noise figure (NF min) (0.52 dB, from 2.03 dB to 1.51 dB) and 10% in the associate gain (G a) (1.0 dB, from 10.3 dB to 11.3 dB) were o...Show More
Excellent passivation and low reflectivity Al2O3 /TiO2 bilayer coatings for n-wafer silicon solar cells
Benjamin G Lee;Jarmo Skarp;Ville Malinen;Shuo Li;Sukgeun Choi;Howard M. Branz
2012 38th IEEE Photovoltaic Specialists Conference
Year: 2012 | Conference Paper |
Cited by: Papers (13)
A bilayer coating of Al2O3 and TiO2 is used to simultaneously achieve excellent passivation and low reflectivity on p-type silicon. This coating is targeted for achieving high efficiency n-wafer Si solar cells, where both passivation and anti-reflection (AR) are needed at the front-side p-type emitter. It could also be valuable for front-side passivation and AR of rear-emitter and interdigitated b...Show More
Quaternary Enhancement-Mode HFET With In Situ SiN Passivation
N. Ketteniss;H. Behmenburg;H. Hahn;A. Noculak;B. Hollander;H. Kalisch;M. Heuken;A. Vescan
IEEE Electron Device Letters
Cited by: Papers (10)
A lattice-matched InAlGaN/GaN heterostructure with a barrier-layer thickness of 4 nm has been grown and passivated in situ with a 63-nm SiN by metal-organic chemical vapor deposition. Enhancement-mode heterostructure field-effect transistors have been realized by a fluorine-based surface treatment after the local removal of the SiN. The threshold voltage and transconductance were 0.65 V and 250 mS...Show More
Low Temperature Cu/SiO2 Hybrid Bonding with Metal Passivation
Demin Liu;Po-Chi Chen;Chien-Kang Hsiung;Shin-Yi Huang;Yan-Pin Huang;Steven Verhaverbeke;Glen Mori;Kuan-Neng Chen
Cu/SiO2 hybrid bonding process with short duration (1 minute) has been successfully performed at low temperature (120 °C) under the atmosphere with metal passivation material. Electrical performance (over 15K daisy chain and 10−8 Ω-cm2 specific contact resistance), mechanical strength (>15kgf), and reliability have been conducted to verify its excellent bonding quality. This method of hybrid bondi...Show More
Improving the Performance of SiGe Metal–Semiconductor–Metal Photodetectors by Using an Amorphous Silicon Passivation Layer
Y. H. Chen;J. D. Hwang;C. Y. Kung;P. S. Chen;C. S. Wei;C. K. Wu;J. C. Liu
IEEE Electron Device Letters
Cited by: Papers (7)
SiGe metal-semiconductor-metal photodetectors (MSM-PDs) with a thin amorphous silicon (a-Si:H) passivation layer have been fabricated by an ultrahigh-vacuum chemical vapor deposition (UHVCVD) system. It was found that the thin (30 nm) a-Si:H passivation layer could effectively suppress the dark current of SiGe MSM-PDs. As compared to the unpassivated devices, the dark current for devices with a-Si...Show More
Investigation of HfSiOX Passivation Effect on AlGaN/GaN HEMT
2020 International Symposium on Devices, Circuits and Systems (ISDCS)
Year: 2020 | Conference Paper |
Cited by: Papers (3)
AlGaN/GaN-based high electron mobility Transistors (HEMTs) were fabricated on Si substrate. Surface passivation effect on AlGaN/GaN HEMTs was investigated with hafnium silicate (HfSiOx) passivation layer deposited by atomic layer deposition (ALD) at 250 °C. The DC current-voltage characteristics (ID-VD), pulsed ID-VD characteristics, and transfer characteristics of the device were compared before ...Show More
Assessing the impact of rear point-contact/passivation on CIGS cells with different absorber thickness and grading
Giovanna Sozzi;Simone Di Napoli;Martina Carrisi;Roberto Menozzi
2018 IEEE 7th World Conference on Photovoltaic Energy Conversion (WCPEC) (A Joint Conference of 45th IEEE PVSC, 28th PVSEC & 34th EU PVSEC)
Year: 2018 | Conference Paper |
Cited by: Papers (3)
In this work we use 3D numerical simulations to design optimized point contacts in back-side passivated CIGS cells. We performed a detailed analysis of point contact size for different CIGS thickness, contact specific resistance, as well as chemical and field-effect passivation properties. The role of CIGS energy gap back-grading in improving the performance of cells with different absorber thickn...Show More
An investigation into the impact of surface passivation techniques using metal-semiconductor interfaces
2016 European Conference on Silicon Carbide & Related Materials (ECSCRM)
Year: 2016 | Conference Paper |
Cited by: Papers (2)
Schottky barrier diodes (SBD) were fabricated on SiC surfaces that had been treated with different surface passivation techniques, so that metal-semiconductor analysis could be used to evaluate the quality of this surface. In this paper, we discuss the results of this study that used Current-Voltage (I-V), Capacitance-Voltage (C-V) and Current-Voltage-Temperature (I-V-T) analysis to look at the im...Show More
SCREAM process for releasing micromechanical MEMS structures using plasma polymerized fluorocarbon thin film for trench sidewall passivation is reported. The developed process is designed as a one mask process, and all etchings and depositions are fabricated in the same etching system (standard capacitive coupled RIE), as one-step-one-run process.Show More
Suppression of threshold voltage shift on In-Si-O-C Thin-Film Transistor with an Al2O3 Passivation Layer under Negative and Positive Gate-Bias Stress
Kazunori Kurishima;Toshihide Nabatame;Takashi Onaya;Kazuhito Tsukagoshi;Akihiko Ohi;Naoki Ikeda;Takahiro Nagata;Atsushi Ogura
2019 Electron Devices Technology and Manufacturing Conference (EDTM)
Year: 2019 | Conference Paper |
Cited by: Papers (1)
We investigated effect of an Al2O3 passivation layer on threshold voltage shift (ΔVth) of Al2O3 insulator/In-Si-O-C thin-film transistors (TFTs) under several gate bias stress conditions. A large ΔVth due to the four components such as electron trap, hole trap at around the valence band edge, deep trap, and generated hole was observed in In-Si-O-C TFT. By introducing an Al2O3 passivation layer, ΔV...Show More
Suppression of threshold voltage shift on In-Si-O-C Thin-Film Transistor with an Al2O3 Passivation Layer under Negative and Positive Gate-Bias Stress
Kazunori Kurishima;Toshihide Nabatame;Takashi Onaya;Kazuhito Tsukagoshi;Akihiko Ohi;Naoki Ikeda;Takahiro Nagata;Atsushi Ogura
Year: 2019 | Conference Paper |
Novel passivation process for GaAs(110) surface with sulf-solutions
Zhou Lu;Wang Yunhua;Jia Baoshan;Bai Duanyuan;Xu Jing;Gao Xin;Bo Baoxue
2011 Academic International Symposium on Optoelectronics and Microelectronics Technology
Year: 2011 | Conference Paper |
Cited by: Papers (1)
In order to enhance the effect of sulfur passivation, the influence of solution polarity on the passivation was investigated; With the following conclusion: the smaller polarity of the solution, the better effect of the passivation. A novel passivation solution made up of (NH4)2S+Se+t-C4H9OH has been prepared. The PL spectrum intensity of the samples treated by (NH4)2S+Se+t-C4H9OH is 23 times stro...Show More
Electrical characteristics enhancement of Au/n-GaAs Schottky barrier diode using sulfur passivation of GaAs surface by (NH4)2SX sulfurization technique
2017 Iranian Conference on Electrical Engineering (ICEE)
Year: 2017 | Conference Paper |
Cited by: Papers (1)
In this study, sulfur-passivation of GaAs surface is used to fabricate free interface state densities in Au/n-GaAs Schottky barrier diodes (SBDs). The effect of passivation on Schottky diode parameters such as ideality factor (n), Schottky barrier height (φB0) and reverse saturated current (Is) were investigated by the current-voltage (I-V) characteristic. The results indicate that the Schottky ba...Show More
Diversified Applications of UV-Ozone Oxide: Effective Surface Clean and High-Quality Passivation
Sara Bakhshi;Ngwe Zin;Marshall Wilson;Ismail Kashkoush;Kristopher O. Davis;Winston V. Schoenfeld
2018 IEEE 7th World Conference on Photovoltaic Energy Conversion (WCPEC) (A Joint Conference of 45th IEEE PVSC, 28th PVSEC & 34th EU PVSEC)
Year: 2018 | Conference Paper |
Cited by: Papers (1)
It is long recognized that the effective surface clean is critical for the increased performance of solar cell and semiconductor devices. In this contribution, we introduced the effectiveness of crystalline silicon surface clean by a simple ultraviolet-ozone (UVo) process by comparing it against the industry standard RCA and UV assisted deionized water (DiO3) techniques. Despite being simple, UV-o...Show More
Photoelectron In-situ Sensing Device with embedded photodiode and interface passivation
2023 IEEE 15th International Conference on ASIC (ASICON)
Year: 2023 | Conference Paper |
Cited by: Papers (1)
The optimized structure of the Photoelectron in-situ sensing device (PISD) is designed, and its performance is studied through TCAD simulation. The results indicate that the use of embedded photodiode with interface passivation effectively suppresses the adverse effects of interface traps, leading to improved device performance. A comparison is made between two possible passivation approaches for ...Show More
Surface passivation on (100) oriented GaAs materials by hydrazine solution
Xu Liuyang;Gao Xin;Yuan Xuze;Cao Xiwen;Xia Xiaoyu;Qiao Zhongliang;Bo Baoxue
2015 International Conference on Optoelectronics and Microelectronics (ICOM)
Year: 2015 | Conference Paper |
To obtain a stable passivation layer with high performance, we use the highly alkaline hydrazine solution to passivate GaAs (100) surface, the native oxidation layer has been effectively removed. The PL intensity was found higher than that of the untreated sample, no obvious PL-intensity degradation was observed during a long period exposure to air.Show More
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