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Study of Wetting and Interfacial Reactivity in Au/Liquid in System for Photonic Packaging
2024 International Conference on Electronics Packaging (ICEP)
Year: 2024 | Conference Paper |
During the reflow soldering, several phenomena occur such as wetting of the substrate by the liquid solder, interfacial reaction at the solder/substrate interface and solidification of unreacted solder. Each of these processes can play a crucial role on the subsequent evolution of the joint, and their control becomes more and more complex with the continuing trend towards the miniaturization. The ...Show More
Optimization of soldering experiments for power devices interconnection and packaging
2020 IEEE 8th Electronics System-Integration Technology Conference (ESTC)
Year: 2020 | Conference Paper |
Cited by: Papers (1)
In this study, soldering experiments with low aspect ratio have been investigated. This constraint is setup for process reasons such as following the soldering by the Transient Liquid Phase Bonding process. Two bump sizes have been used for the soldering experiments: 1mm and 90μm. The target height of deposited Cu pillars is 20μm and the thickness of deposited Sn-2wt%Ag alloy varies from 5 to 30μm...Show More
Thermodynamic and kinetic factors governing wetting of oxidized and deoxidized Cu surfaces by liquid Sn
2020 IEEE 8th Electronics System-Integration Technology Conference (ESTC)
Year: 2020 | Conference Paper |
In this work we study the isothermal wetting and spreading kinetics of liquid Sn on oxidized and deoxidized Cu surfaces. The thickness of the oxide layer over the Cu substrate varied between about 5 nm and 1 μm. The final contact angles and spreading kinetics on oxidized surfaces are compared with those on deoxidized Cu as well as on interfacial reaction product Cu6Sn5. The role of the oxide layer...Show More
Cu pillar as interconnect for 10 μm pitch and below: Fabrication issues and assembly results
M. Volpert;D. Henry;D. Taneja;T. Chaira;A. Gueugnot;F. Hodaj
2018 7th Electronic System-Integration Technology Conference (ESTC)
Year: 2018 | Conference Paper |
Cited by: Papers (2)
This paper describes an interconnect technology based on copper pillar for the assembly of Si on Si die at a 10 μm pitch and format as large as 1cm2. Slowly some technologies are being developed at this pitch, especially in some niche application. They involve In based solder or micro-tube insertion at room temperature or micro-insert. Even if these technologies present some advantages, the supply...Show More
Towards reliable pitch assembly using Cu/Ni/SnAg based interconnects
D. Taneja;M. Volpert;L. Mendizabal;T. Chaira;D. Henry;F. Hodaj
2017 IEEE 19th Electronics Packaging Technology Conference (EPTC)
Year: 2017 | Conference Paper |
In this paper, the interconnect for 10μm are evaluated. Two processes for obtaining interconnects for 10μm pitch are compared in terms of reliability. One process yields the interconnects with Ni3Sn4 intermetallic (IMC) joint (interconnect A) while other yields the interconnects with solder joint (interconnect B). To select the best process for the assembly at 10μm pitch, high temperature storage ...Show More
Cu-SnAg Interconnects Evaluation for the Assembly at 10µm and 5µm Pitch
Divya Taneja;Marion Volpert;Gilles Lasfargues;Bertrand Chambion;Boris Bouillard;Sylvie Jarjayes;Tarik Chaira;Aureili Vandeneynde;Yannick Goiran;David Henry;Fiqiri Hodaj
2017 IEEE 67th Electronic Components and Technology Conference (ECTC)
Year: 2017 | Conference Paper |
Cited by: Papers (3)
Several types of interconnects for the finer pitch assembly are currently being investigated across the globe. Here in this paper, a new type of interconnect Ni3Sn4 Interconnect is proposed and evaluated for assembly at 10 pitch and below. The proposed interconnect is compared to traditional solder interconnect. The comparison is done on the basis of shape of the joints in interconnects, the elect...Show More
Understanding the Behavior of SnAg Bumps at 10 µm Pitch and Below for Imaging and Microdisplay Application
D. Taneja;M. Volpert;G. Lasfargues;T. Catelain;D. Henry;F. Hodaj
2016 IEEE 66th Electronic Components and Technology Conference (ECTC)
Year: 2016 | Conference Paper |
Cited by: Papers (3)
The finer pitch of 10 μm and below is currently explored by Microdisplays and Imaging industries. There are many contenders for achieving assembly at this pitch e.g. Cu-diffusion, Microtubes[1], and SnAg bumps. Among the contenders, SnAg bumps are tested for larger bumps but their capabilities for the finer pitch are yet to be explored. In this paper, behavior of SnAg for smaller bumps for the fin...Show More
Microstructural and morphological characterization of SnAgCu micro-bumps for integration in 3D interconnects
J. Bertheau;P. Bleuet;Roland Pantel;J. Charbonnier;F. Hodaj;P. Coudrain;N. Hotellier
2013 IEEE 63rd Electronic Components and Technology Conference
Year: 2013 | Conference Paper |
Cited by: Papers (6)
3D interconnects (IC's) studied in this work are ultra fine 50μm pitch structures realized by eutectic bonding of a tin based solder joint. It is well-known that these IC's contain intermetallic compounds (IMC) that grow at the copper/SnAgCu (SAC) alloy interface. Even if this IMC layer evidences a good adhesion between copper and solder alloy, their brittle nature and their resistivity, which is ...Show More
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