DC-Dependent Cardiff Model from Modulated Supply and Load-Pull Data

This paper presents analysis of Fourier transferred dataset to accurately extract a DC-dependent Cardiff nonlinear behavioral model. The analysis is based on simulation data of a 10 W GaN high electron mobility transistor (HEMT) at 3.5 GHz. Tailored load-pull data were collected over a modulated gate and drain voltages ranging from −3.0 V to −2.0 V and 15 V to 30 V, respectively. The extracted model coefficients are capable of accurately predicting the load-pull data with normalized-mean-square-error (NMSE) value of less than −40 dB.