Improvement in Threshold Voltage and Leakage Current in Double Stacked NCFET Using PZT and PMN Ferroelectric Materials

This brief is reporting a novel device configuration of negative capacitance field effect transistor with PMN and PZT stacked ferroelectric materials. It has been found that double stacked NCFET has better electrical characteristics than conventional NCFET. Implanting different gate metal significantly affect the threshold voltage and leakage current. Stacked NCFET has improved threshold voltage and less leakage current than that of conventional NCFET. Collective dielectric property of PMN and PZT holds a reason for better performance of stacked NCFET.