Potential of the Amorphous Oxide Semiconductors for Heterogeneous Power Integration Applications

In the emerging heterogeneous power integration applications, the power devices have to be fabricated on metal/glass/organics. In this field, amorphous oxide semiconductors (AOSs) have being the dominant semiconductor material to fulfill the low-temperature fabrication requirement. In the AOSs, the theoretical tradeoff between specific
$\mathrm{\scriptstyle ON}$
-resistance (
${R}_{ \mathrm{\scriptscriptstyle ON},\text {sp}}$
) and breakdown voltage (BV) is discussed. It is found that the tradeoff is rather different from the situation in these commonly used single-crystal semiconductors. In the AOSs, under the one-dimensional condition,
${R}_{ \mathrm{\scriptscriptstyle ON},\text {sp}}$
is not proportional to
${\textbf {BV}^{\textbf {2}}}$
due to the unique charge carrier mobility dependence on the carrier concentration. An analytical model has been extracted to describe such dependence, and it is found that
${R}_{ \mathrm{\scriptscriptstyle ON},\text {sp}}$
is proportional to
$\text {BV}^{{4}}$
. Moreover, it is revealed that under a two-dimensional condition, such as reduced surface field (RESURF) condition, a “heavily doped” drift region can be used, and the mobility degradation issue could be resolved.