Selective Area Epitaxy of InP/InAsP Multi-Quantum Well Micro-Ring Lasers

In this work, we demonstrate the incorporation of InAsP multi-quantum well (MQW) structure in InP micro-ring lasers grown with a selective area epitaxy technique. Through optimization of the metal organic chemical vapor deposition (MOCVD) growth conditions, we observe a transition from a 3D island growth mode to a 2D layer-by-layer growth mode during the InAsP-on-InP growth, resulting in MQW with high crystal quality and uniformity. Furthermore, we also demonstrate tuning of the emission wavelength from 1.1 to 1.35 mm by varying the growth conditions. Finally, aided by design and modelling of the ring cavity with numerical methods, we demonstrate room-temperature lasing in the InP/InAsP micro-ring lasers.