Investigation of Temperature Variation in Partially Extended Si1-xGex Source Double Gate Tunnel FET

This work describes how changing the mole fraction(x) in the Sil-xGex source affects the band gap of semiconductor materials in partially extended double gate TFET (PESil-xGexDG-TFET) to improve the nanometer- scaled device drive current. Our research uses the Silvaco ATLAS simulator to analyze Analog/RF performance parameters like Id- V gs characteristics transconductance (gm), and cut-off frequency (IT). Further optimized x in Sil-xGex source is taken to predict device reliability by taking the influence of temperature in the range (275–450 K) on these performance parameters.