MOSFET Modelling for a Three-Level Inverter Circuit: A Hybrid Bond Graph Approach

This paper is devoted to Hybrid Bond Graph Modelling for one most common semiconductor device, It is the Metal–Oxide–Semiconductor Field-Effect Transistor (MOSFET). Such elements are common in the field of power converters energy states from AC to DC or DC to AC. Switching dynamics and reverse current are considered in the parasite diode, as application, a single-phase three levels rectifier is presented to demonstrate discontinuous or switching behaviour involved in the hybrid model. This approach is developed using the notion of commutation bond junctions, finally, a group of dynamics are showed including the drain-source voltage that appears when a current is applied to the body diode of a MOSFET in the forward direction. The global model used for the simulations includes the simplified device model and the control of the bond junctions, the dynamics are created and validated with two software programs: 20Sim and Multisim.