A High Power Density Double-Side-End Double-Sided Bonding SiC Half-Bridge Power Module

Silicon carbide (SiC) power module with lower loop inductance, better dynamic current sharing properties, and better thermal performance will contribute to achieve high power density three-phase inverter in medium-voltage applications. Inspired by the concept of double-side-end busbar, a novel double-side-end double-sided bonding (DSB) power module is proposed in this article. For three chips’ parallel situation, the double-side-end structure decreases parasitic inductance by 40% compared to traditional baseline structure. Besides lower parasitic inductance, a novel structure also has better dynamic current sharing properties. To explain these dynamic current sharing phenomena, an equivalent source inductance model considering mutual inductance is proposed in this article. A 1200-V 10-
$\text{m}\Omega $
SiC double-side-end DSB half-bridge power module is designed, fabricated, and tested. The proposed power module realizes 3-nH power loop inductance. Furthermore, to realize the practical application of the novel power module, a novel compact two-level three-phase integration architecture based on a novel power module is also proposed. With the help of the double-sided direct-cooling method and double-side-end busbar, the proposed architecture will help to realize better performance.