Perhaps First Experimental Report of New 2D TCRFP Device

This paper is perhaps the first experimental VDMOS verification prototype based on the principle of a Two-Dimensional Tightly Coupled Resistive Field Plate (2D TCRFP). The 2D TCRFP VDMOS samples are prepared by the deep trench undoped polysilicon filling technology. The 28μm deep trench resistive field plate is designed, and the resistivity 3.6Ω·cm of the drift region is selected. The 1D theoretical breakdown of the contrast VDMOS is about 240V. The maximum measured breakdown voltage of the VDMOS sample in the 2D TCRFP is 520V@2.0mA, which is about 2.16 times the theoretical breakdown with the same resistivity drift region of the 1D VDMOS, and its chip area is about 1.52mm×1.20mm, the trench width is 1.2μm (design value), 5.4μm space between two adjacent trenchs. As far as we know, no similar experiment results have been reported before.